Datasheet FDMC8296 Datasheet (Fairchild)

Download

Page 1

FDMC8296

N-Channel Power Trench®MOSFET

30V, 18A, 8.0m:

Features

 Max r

 High performance trench technology for extr

 Termination is Lead-free and RoHS Compliant

= 8.0m: at VGS = 10V, ID = 12A

DS(on)

= 13.0m: at VGS = 4.5V, ID = 10A

DS(on)

emely low r

DS(on)

September 2010



General Description

This N-Channel MOSFET is produced using Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistan device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

process that has

Application

 DC - DC Buck Converter

ook battery power management

 Noteb

 Load switch in Notebook

Fairchild

ce. This

FDMC8296 N-Channel Power Trench

MOSFET

Top

Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings

, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±2

Drain Current -Continuous (Package limited) TC= 25°C 18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 52

e Pulse Avalanche Energy (Note 3) 72 mJ

Singl

Power Dissip

Power

Operating and Storage Junction Temperature Range -55 to +150

ation T

Dissipation T

= 25°C unless otherwise noted

= 25°C 44

= 25°C

= 25°C 27

= 25°C

(Note 1a) 12

(Note 1a) 2.3

Thermal Characteristics

Units

0 V

°C

TJC

TJA

Thermal Resistance

Thermal Resistance, Junction to Ambient

, Junction to Case 4.6

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8296 FDMC8296 MLP 3.3X3.3 13 ’’

d Semiconductor Corporation

(Note 1a) 53

12 mm 3000 units

°C/W

www.fairchildsemi.com

Page 2

FDMC8296 N-Channel Power Trench

Electrical Characteristics T

l Parameter Test Conditions Min Typ Max Units

Symbo

Off Characterist

DSS

'BV

DSS

'T

DSS

GSS

On Characteristics

GS(th)

'V

GS(th)

'T

DS(on)

Dynamic Characte

iss

oss

ics

Drain to Source Breakdown Volt

Breakdown Voltage Temperature

ficient

Coef

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±1

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage T

emperature Coefficient

Static Drain to

Forward T

Source On Resistance

ransconductance V

ristics

Input Capacitance

Output Capacit

Reverse Transfer Capacit

Gate Resistance f = 1MHz 0.9 :

ance 513 685

ance 87 135 pF

= 25°C unless otherwi

age I

= 250PA, VGS = 0V 30 V

= 250PA, referenced to 25°C 17 mV/°C

= 250PA, referenced to 25

f = 1MHz

se noted

= 24V, 1

= 0V, TJ = 125°C 250

00 nA

= VDS, ID = 250PA 1.0 1.9

3.0 V

°C -6 mV/°C

= 10V, ID = 12A 6.5 8.0

= 4.5V, ID = 10A 9.5 13.0

= 10V, ID = 12A, TJ = 125°C 9.0 12.8

= 5V, ID = 12A 44 S

= 15V, VGS = 0V,

1038 1385 pF

m:V

MOSFET

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay T

ime

Rise Time 310

Turn-Off Delay T

Fall T

ime 210

Total Gate Charge

Gate to Drain “Miller”

ime 19 35 ns

3nC

Charge 2.5 nC

Drain-Source Diode Characteristics

NOTES:

is dete

1. R

TJA

the user's board design.

Source to Drain Diode Forward Volt

Reverse Recovery T

ime

Reverse Recovery Charge 9 18

rmined with the device mounted on a 1in

pad 2

a. 53 °C/W whe a 1 i n

= 15V, ID = 12A,

= 10V, R

= 0V to 10V

= 0V to 4.5V 7.

= 0V, IS= 12A (Note 2) 0.8

age

oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

pad of

= 0V, IS= 1.9A

= 12A, di/dt = 100A/Ps

n mounted on

2 oz copper

GEN

= 6:

= 15V,

= 12A

(Note 2) 0.73 1.2

918ns

16 23 nC

6 10.6 nC

2 1.3

25 45

is guar

anteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

is determined

TCA

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

of 72 mJ is based on starting T = 25 C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS= 5.7 A.

3. E



www.fairchildsemi.com

Page 3

FDMC8296 N-Channel Power Trench

Typical Characteristics T

VGS = 10V

, DRAIN CURRENT (A)

012345

Figure 1.

1.8

ID = 12A V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 4.5V

VGS = 4V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

= 10V

, JUNCTION TEMPERATURE (

vs Junction Temperature

= 25°C unless otherwise noted

VGS = 3.5V

VGS = 3V

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

VGS = 3V

VGS = 3.5V

= 4V

= 4.5V

NORMALIZED

=10V

DRAIN TO SOURCE ON-RESISTANCE

0 1020304050

, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

(m:)

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

TJ= 25oC

246810

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

ID= 12A

TJ= 125oC

, GATE TO SOURCE VOLTAGE (V)

Source Voltage

MOSFET

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VDS= 5V

TJ= 150oC

, DRAIN CURRENT (A)

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ= 25oC

TJ= -55oC

= 0V

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDMC8296 N-Channel Power Trench

Typical Characteristics T

ID= 12A

, GATE TO SOURCE VOLTAGE(V)

0 3 6 9 12 15 18

Figure 7.

Gate Charge Characteristics Figure 8.

, AVALANCHE CURRENT(A)

0.01 0.1 1 10 100

tAV, TI ME IN AVALANCHE( ms)

Figure 9.

Switching Capability

= 10V

Qg, GATE CHARGE(nC)

TJ= 125oC

U n c l a m p e d I n d u c t i v e

= 25°C unless otherwise noted

VDD = 15V

VDD = 20V

TJ= 25oC

3000

1000

100

CAPACITANCE (pF)

f = 1MHz V

= 0V

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

= 10V

= 4.5V

, DRAIN CURRENT (A)

Limited by Package

25 50 75 100 125 150

, CASE TEMPERATURE (

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

TJC

= 4.6oC/W

C u r r e n t v s C a s e T e m p e r a t ur e

iss

oss

rss

MOSFET

100

THIS AREA IS LIMITED BY r

, DRAIN CURRENT (A)

SINGLE PULSE

0.1

TJA

0.01

0.01 0.1 1 10 100

Figure 11.

DS(on)

= MAX RATED

= 125oC/W

= 25oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Fo rw ar d B ia s Safe

Operating Area

1ms

10ms

100ms

10s

200

100

VGS = 10V

SINGLE PULSE

= 125oC/W

TJA

= 25oC

), PEAK TRANSIENT POWER (W)

0.5

-3

Figure 12.

10-210

-1

t, PULSE WIDTH (s)

110

100 1000

S i n g l e P u l s e M a x i m u m

Power Dissipation

www.fairchildsemi.com

Page 5

FDMC8296 N-Channel Power Trench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

TJA

0.1

IMPEDANCE,

NORMALIZED THERMAL

0.01

0.005

0.2

0.1

0.05

0.02

0.01

-3

-2

= 25°C unless otherwise noted

SINGLE PULSE

= 125oC/W

TJA

-1

t, RECTANGULAR PULSE DURATION (sec )

110

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

1/t2

x R

+ T

TJA

100 1000

MOSFET

www.fairchildsemi.com

Page 6

Dimensional Outline and Pad Layout

FDMC8296 N-Channel Power Trench

MOSFET

www.fairchildsemi.com

Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK

EfficientMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench

PowerXS™ Programmable Active Droop™

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W /kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMC8296 N-Channel Power Trench

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE W ARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMC8296 Rev.C1

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com

Rev. I48