Datasheet FDMC8026S Datasheet (Fairchild)

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FDMC8026S

MLP 3.3x3.3

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Pin 1

2 1

and

General Description

The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r

while maintaining excellent switching performance.This

DS(on)

device has the added benefit of an efficient monolithic schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Notebook Vcore/GPU low side switch  Networking Point of Load low side switch  Telecom secondary side rectification

N-Channel PowerTrench® SyncFET

30 V, 21 A, 4.4 mΩ Features

 Max r  Max r  Advanced package and silicon combination for low r

high efficiency

 SyncFET Schottky Body Diode  MSL1 robust package design  100% UIL tested  RoHS Compliant

= 4.4 mΩ at VGS = 10 V, ID = 19 A

DS(on)

= 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A

DS(on)

FDMC8026S N-Channel PowerTrench

March 2011

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25°C 21

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100 Single Pulse Avalance Energy (Note 3) 66 mJ Power Dissipation TC = 25°C 36 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8026S FDMC8026S MLP 3.3X3.3 13 ’’ 12

Thermal Resistance, Junction to Case 3.4 Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

= 25°C 76

= 25°C (Note 1a) 19

= 25°C (Note 1a) 2.4

mm 3000 units

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°C/W

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FDMC8026S N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current, Forward V

= 1 mA, VGS = 0 V30 V

= 10 mA, referenced to 25 °C 26 mV/°C

= 24 V, V

= 20 V, V

= 0 V500μA

= 0 V 100nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 19 A 3.84.4

= 4.5 V, ID = 17.5 A4.55.2

= 10 V, ID = 19 A,

= 125 °C

= 5 V, ID = 19 A 106 S

= 1 mA 1.2 1.6 3.0 V

4.5 5.8

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 885 1175 pF Reverse Transfer Capacitance 100 150 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.1 0.7 2.5 Ω

2380 3165 pF

mΩ

SyncFET

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 510ns Turn-Off Delay Time 30 48 ns Fall Time 410ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 6 nC Gate to Drain “Miller” Charge 6 nC

= 15 V, ID = 19 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 4.5 V1825nC

GEN

Drain-Source Diode Characteristics

= 0 V, IS = 2 A (Note 2) 0.6 0.8

Notes:

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 33 53 nC

a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper.

= 0 V, IS = 19 A (Note 2) 0.8 1.2

= 19 A, di/dt = 300 A/μs

= 6 Ω

= 19 A

= 15 V,

θJC

11 20 ns

37 52 nC

29 47 ns

is guaranteed by design while R

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L = 3 mH, IAS = 10.2 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

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FDMC8026S N-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0

100

VGS = 4 V

VGS = 3 V

VGS = 4.5 V

VGS = 3.5 V

VGS = 6 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

020406080100

VGS = 4 V

VGS = 3 V

VGS = 6 V

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

VGS = 4.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 19 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TE MPERATU R E (

246810

TJ = 125 oC

ID = 19 A

TJ = 25 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

100

TJ = 125 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

SyncFET

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC8026S N-Channel PowerTrench

0 8 16 24 32 40

ID = 19 A

VDD = 20 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10

100

1000

5000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10 100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE ( ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 4.5 V

Limited by P ack age

θJC

= 3.4 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100200

0.01

0.1

100

200

1 s

100 μs

10 ms

10 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

), PEAK TRANSIENT PO WER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25 °C unless otherwise noted

Figure 8.

Capacitance vs Drain

to Source Voltage

SyncFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

Figure 12.

Single Pul se Max imum

Power Dissipation

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FDMC8026S N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.0001

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

(Note 1b)

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13.

= 25 °C unless otherwise noted

Junction-to-Ambient Transient Thermal Response Curve

SyncFET

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0 50 100 150 200 250

-5

di/dt = 3 0 0 A/μs

CURRENT (A)

TIME (ns)

Figure 14. FDMC8026S SyncFET body diode reverse recovery characteristic

Figure 15. SyncFET body diode reverse leakage versus drain-source voltage

0 5 10 15 20 25 30

0.000001

0.00001

0.0001

0.001

0.01

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMC8026S N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMC8026S.

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

SyncFET

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Page 7

Dimensional Outline and Pad Layout

FDMC8026S N-Channel PowerTrench

SyncFET

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its globa l subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ AX-CAP™* Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC8026S N-Channel PowerTrench

SyncFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semicondu ctor products a re experiencing counterfe iting of their

parts. Customers who inadvertently purchase counterfeit parts exper ience many pr oblems su ch as l oss of brand reputation , substan dard per fo rmance, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking st rong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild stro ngly encourages custo mers to purchase Fairchild parts eithe r directly fro m Fairchild or from A uthorized Fairchil d Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceabi lity, meet Fairchild’s quality standards for handing and storage and pr ovide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping th is practice by buying direct or from authorized distribut ors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any ti me without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I53