Datasheet FDMC7692S Datasheet (Fairchild)

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FDMC7692S

N-Channel Power Trench® SyncFETTM

30 V, 12.5 A, 9.3 m: Features

 Max r

 High performance technology for extremely low r

 Termination is Lead-free and RoHS Compliant

= 9.3 m: at VGS = 10 V, ID = 12.5 A

DS(on)

= 13.6 m: at VGS = 4.5 V, ID = 10.4 A

DS(on)

General Description

This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.

Applications

September 2010

process that has been especially

FDMC7692S N-Channel Power Trench

 DC - DC Buck Converters

 Notebook DC - DC application

Top

Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 18

-Pulsed 45

Sinlge Pulse Avalanche Energy (Note 3) 21 mJ

Power Dissipation TC= 25 °C 27

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1a) 12.5

= 25 °C (Note 1a) 2.3

Thermal Characteristics

SyncFET

A -Continuous T

TJC

TJA

Thermal Resistance, Junction to Case 4.7 °C/W

Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7692S FDMC7692S MLP 3.3X3.3 13 ’’ 12 mm 3000 units

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Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25 °C unless otherwise noted

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current VGS = 20 V, V

= 10 mA, referenced to 25 °C 16 mV/°C

= 0 V 500 PA

= 0 V 100 nA

FDMC7692S N-Channel Power Trench

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 2.0 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 5 V, ID = 12.5 A 62 S

(Note 2)

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 445 590 pF

Reverse Transfer Capacitance 40 60 pF

Gate Resistance 1.1 2.9 :

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 310ns

Turn-Off Delay Time 19 34 ns

Fall Time 310ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 4.5 V 8 10 nC

Gate to Source Gate Charge 4 nC

Gate to Drain “Miller” Charge 2 nC

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 12.5 A 7.8 9.3

= 4.5 V, ID = 10.4 A 10.8 13.6

= 10 V, ID = 12.5 A

= 125 °C

= 15 V, VGS = 0 V,

9.6 13.0

1040 1385 pF

f = 1 MHz

917ns

= 15 V, ID = 12.5 A,

= 10 V, R

GEN

= 6 :

16 23 nC

= 15 V

= 12.5 A

SyncFET

Drain-Source Diode Characteristics

Notes:

1. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12.0 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 3.2 A .

3. E

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 16 29 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

= 0 V, IS= 12.5 A (Note 2) 0.9 1.3

= 0 V, IS= 0.9 A (Note 2) 0.5 0.7

= 12.5 A, di/dt = 300 A/Ps

a. 53 °C/W when mounted on a 1 in2pad of 2 oz copper.

21 33 ns

is guaranteed by design while R

TJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

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FDMC7692S N-Channel Power Trench

Typical Characteristics T

VGS = 10 V

, DRAIN CURRENT (A)

0 0.2 0.4 0.6 0.8 1.0

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

1.4

On-Region Characteristics

ID = 12.5 A V

= 10 V

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

VGS = 6 V

VGS = 3.5 V

3.5

3.0

2.5

VGS = 3.5 V

2.0

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 9 18 27 36 45

Figure 2.

N o r m a l i z e d O n - R e s i s t a n c e

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

=4 V

VGS = 4.5 V

=10 V

, DRAIN CURRENT (A)

VGS = 6 V

vs Drain Current and Gate Voltage

ID= 12.5 A

(m:)

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

Figure 4.

TJ= 25 oC

, GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 P s DUTY CYCLE = 0.5% MAX

TJ= 125 oC

Source Voltage

SyncFET

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VDS= 5 V

TJ = 125 oC

, DRAIN CURRENT (A)

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

100

VGS= 0 V

TJ= 125 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

TJ = -55 oC

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

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FDMC7692S N-Channel Power Trench

Typical Characteristics T

= 12.5 A

DSS

, GATE TO SOURCE VOLTAGE (V)

0369121518

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

, AVALANCHE CURRENT (A)

0.001 0.01 0.1 1 10 50

tAV, TIME IN AVALANCHE (ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

TJ= 125 oC

= 25 °C unless otherwise noted

= 10 V

VDD = 15 V

VDD = 20 V

TJ= 25 oC

TJ= 100 oC

3000

1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

100

THIS AREA IS LIMITED BY r

, DRAIN CURRENT (A)

0.1

0.01

SINGLE PULSE T

TJA

0.01 0.1 1 10 100

Figure 10.

DS(on)

= MAX RATED

= 125 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

F or w ar d Bi a s S a fe

Operating Area

oss

iss

100 us

1ms

10 ms

100 ms

1 s

10 s

SyncFET

1000

100

, PEAK TRANSIENT POWER (W)

(PK)

0.5

-4

-3

VGS = 10V

-2

-1

t, PULSE WIDTH (sec)

Figure 11. Single Pulse Maximum Power Dissipation

SINGLE PULSE

= 125 oC/W

TJA

= 25 oC

100 1000

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FDMC7692S N-Channel Power Trench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

TJA

0.05

0.02

0.01

-3

SINGLE PULSE

IMPEDANCE, Z

1E-3

NORMALIZED THERMAL

1E-4

-4

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

= 125 oC/W

TJA

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

TJA

x R

+ T

TJA

100 1000

SyncFET

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Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMC7692S N-Channel Power Trench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverses recovery characteristic of the FDMC7692S.

CURRENT (A)

-5 0 50 100 150 200 250

didt = 300 A/P s

TIME (ns)

Figure 13. SyncFET body diode reverse

recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

, REVERSE LEAKAGE CURRENT (uA)

-1

DSS

0 5 10 15 20 25 30

VDS, REVERSE VOLTAGE (V)

TJ= 125 oC

TJ= 100 oC

TJ= 25 oC

Figure 14. SyncFET body diode reverses

leakage versus drain-source voltage

SyncFET

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Page 7

Dimensional Outline and Pad Layout

FDMC7692S N-Channel Power Trench

SyncFET

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Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK

EfficientMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench

PowerXS™ Programmable Active Droop™

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMC7692S N-Channel Power Trench

SyncFET

DISCLAIMER

FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. Fairchild w ill not pro vide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I48