Datasheet FDMC7692 Datasheet (Fairchild)

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FDMC7692

N-Channel Power Trench®MOSFET

30 V, 13.3 A, 8.5 m:

Features

 Max r

 High performance technology for extremely low r

 Termination is Lead-free and RoHS Compliant

= 8.5 m: at VGS = 10 V, ID = 13.3 A

DS(on)

= 11.5 m: at VGS = 4.5 V, ID = 10.6 A

DS(on)

September 2011



General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Application

 DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

process that has

FDMC7692 N-Channel Power Trench

MOSFET

Top

Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 16

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 58 mJ

Power Dissipation TC = 25 °C 29

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1a) 13.3

= 25 °C (Note 1a) 2.3

Thermal Characteristics

A -Continuous T

TJC

TJA

Thermal Resistance, Junction to Case 4.3

Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7692 FDMC7692 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

°C/W

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FDMC7692 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

= 250 PA, referenced to 25 °C 16 mV/°C

= 24 V, VGS= 0 V 1

= 125 °C 250

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V 100 nA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250 PA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 13.3 A 7.2 8.5

= 4.5 V, ID = 10.6 A 9.5 11.5

= 10 V, ID = 13.3 A, TJ = 125 °C 9.5 12.0

Forward Transconductance VDD = 5 V, ID = 13.3 A 60 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 480 635 pF

Reverse Transfer Capacitance 65 100 pF

= 15 V, VGS = 0 V,

f = 1 MHz

1260 1680 pF

Gate Resistance 0.9 2.4 :

m:V

MOSFET

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time

Rise Time 410ns

Turn-Off Delay Time 21 33 ns

= 15 V, ID = 13.3 A,

= 10 V, R

GEN

= 6 :

Fall Time 310ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge V

= 0 V to 4.5 V 10 14 nC

Total Gate Charge 5nC

Gate to Drain “Miller” Charge 3 nC

Drain-Source Diode Characteristics

= 0 V, IS= 13.3 A (Note 2) 0.86 1.2

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 7 14 nC

a. 53 °C/W when mounted on

a 1 in

pad of 2 oz copper

= 0 V, IS= 1.9 A (Note 2) 0.75 1.2

= 13.3 A, di/dt = 100 A/Ps

= 15 V

= 13.3 A

918ns

21 29 nC

24 38 ns

is guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

TCA

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

3. E

of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V.

100% test at L = 0.1 mH, IAS = 21 A.

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FDMC7692 N-Channel Power Trench

Typical Characteristics T

VGS = 10 V

VGS = 6 V

VGS = 4.5 V

VGS = 4 V

, DRAIN CURRENT (A)

01234

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

ID = 13.3 A V

1.4

On-Region Characteristics Figure 2.

= 10 V

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

VGS = 3.5 V

VGS = 3 V

4.0

3.5

VGS = 3.5 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

3.0

2.5

2.0

VGS = 4 V

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 10203040

, DRAIN CURRENT (A)

VGS = 6 V

VGS = 4.5 V

VGS = 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

ID= 13.3 A

(m:)

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 P s DUTY CYCLE = 0.5% MAX

TJ= 125 oC

TJ= 25 oC

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VDS= 5 V

, DRAIN CURRENT (A)

12345

TJ = 150 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

VGS= 0 V

TJ= 150 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

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FDMC7692 N-Channel Power Trench

Typical Characteristics T

ID= 13.3 A

= 10 V

VDD = 15 V

, GATE TO SOURCE VOLTAGE (V)

0 3 6 9 12 15 18 21

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

VDD = 20 V

TJ= 25 oC

3000

1000

CAPACITANCE (pF)

100

f = 1 MHz V

= 0 V

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

VGS= 10 V

iss

oss

rss

MOSFET

TJ= 100 oC

TJ= 125 oC

, AVALANCHE CURRENT (A)

0.01 0.1 1 10 30

tAV, TIME IN AVALANCHE (ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

THIS AREA IS LIMITED BY r

SINGLE PULSE

0.1

, DRAIN CURRENT (A)

0.01

= MAX RATED

TJA

0.01 0.1 1 10 100

DS(on)

= 125 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

100 Ps

1 ms

10 ms

100 ms

1 s

10 s

DRAIN CURRENT (A)

Limited by Package

= 5.0 oC/W

25 50 75 100 125 150

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

VGS= 4.5 V

CASE TEMPERATURE

(

)

C u r r e n t v s C a s e T e m p e r a t u re

1000

100

), PEAK TRANSIENT POWER (W)

0.5

VGS = 10 V

SINGLE PULSE R

= 125 oC/W

TJA

= 25 oC

10-410-310-210

t, PULSE WIDTH (sec)

-1

110

100 1000

Figure 11.

Fo rw ar d B ias Sa fe

Operating Area

Figure 12.

S i n g l e P u l s e M a x i m u m

Power Dissipation

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FDMC7692 N-Channel Power Trench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

TJA

-4

-3

TJA

IMPEDANCE, Z

0.01

NORMALIZED THERMAL

0.001

= 25 °C unless otherwise noted

NOTES: DUTY FACTOR: D = t1/t

= 125 oC/W

-2

t, RECTANGULAR PULSE DURATION (sec )

-1

110

PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

x R

+ T

TJA

100 1000

MOSFET

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Dimensional Outline and Pad Layout

FDMC7692 N-Channel Power Trench

MOSFET

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™

TRADEMARKS

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMC7692 N-Channel Power Trench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconduct or reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fai r child Semiconductor. The datashe et is for reference information only.

Rev. I55

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