Datasheet FDMC7660DC Datasheet (Fairchild)

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Page 1

FDMC7660DC

Top

Power 33

Bottom

Pin 1

D D

5 6

N-Channel Dual Cool

30 V, 40 A, 2.2 mΩ Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  SyncFET Schottky Body Diode

 RoHS Compliant

= 2.2 mΩ at VGS = 10 V, ID = 22 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest

DS(on)

while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation

January 2011

process.

package

DS(on)

FDMC7660DC N-Channel Dual Cool

PowerTrench

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.0 V/ns P

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 220 mJ

Power Dissipation TC = 25 °C 78 Power Dissipation T Operating and Storage Junction Temperature Range -55 to + 150 °C

= 25°C unless otherwise noted

= 25 °C 150

= 25 °C (Note 1a) 30

= 25 °C (Note 1a) 3.0

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

7660 FDMC7660DC Dual Cool

Power 33 13’’ 12 mm 3000 units

°C/W

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MOSFET

Page 2

FDMC7660DC N-Channel Dual Cool

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current, Forward V

= 250 μA, VGS = 0 V30 V

= 250 μA, referenced to 25 °C 15 mV/°C

= 24 V, V

= 20 V, V

= 0 V1μA

= 0 V 100nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 250 μA, referenced to 25 °C -7 mV/°C

= 10 V, ID = 22 A 1.62.2

= 4.5 V, ID = 18 A2.53.3

= 10 V, ID = 22 A, T

= 5 V, ID = 22 A 147 S

= 250 μA 1.2 2 2.5 V

= 125°C 2.2 3.3

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1215 1620 pF Reverse Transfer Capacitance 100 150 pF Gate Resistance 0.7 1.5 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 6.6 13 ns Turn-Off Delay Time 36 58 ns Fall Time 510ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 13 nC Gate to Drain “Miller” Charge 5.5 nC

= 15 V, VGS = 0 V,

f = 1MHz

= 15 V, ID = 22 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 4.5 V2434nC

GEN

= 6 Ω

= 22 A

= 15 V,

3885 5170 pF

17 31 ns

54 76 nC

mΩV

PowerTrench

MOSFET

Drain-Source Diode Characteristics

Source-Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 24 38 nC

= 0 V, IS = 22 A (Note 2) 0.8 1.2

= 0 V, IS = 1.9 A (Note 2) 0.7 1.2

= 22 A, di/dt = 100 A/μs

43 69 ns

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Page 3

Thermal Characteristics

FDMC7660DC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 4.3 Thermal Resistance, Junction to Case (Bottom Drain) 1.6 Thermal Resistance, Junction to Ambient (Note 1a) 42 Thermal Resistance, Junction to Ambient (Note 1b) 105 Thermal Resistance, Junction to Ambient (Note 1c) 29 Thermal Resistance, Junction to Ambient (Note 1d) 40 Thermal Resistance, Junction to Ambient (Note 1e) 19 Thermal Resistance, Junction to Ambient (Note 1f) 23 Thermal Resistance, Junction to Ambient (Note 1g) 30 Thermal Resistance, Junction to Ambient (Note 1h) 79 Thermal Resistance, Junction to Ambient (Note 1i) 17 Thermal Resistance, Junction to Ambient (Note 1j) 26 Thermal Resistance, Junction to Ambient (Note 1k) 12 Thermal Resistance, Junction to Ambient (Note 1l) 16

a. 42 °C/W when mounted on

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 105 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

MOSFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 220 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33.5 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 22 A, di/dt ≤ 100 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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Page 4

FDMC7660DC N-Channel Dual Cool

0.00.20.40.60.81.0

100

150

200

VGS = 6 V

VGS = 4.5 V

VGS = 8 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 50 100 150 200

VGS = 8 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 4 V

VGS = 4.5 V

VGS = 6 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 22 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

TJ = 125oC

ID = 22 A

TJ = 25 oC

, GATE TO S OURCE VO L TAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

2.02.53.03.54.04.5

100

150

200

TJ = 150 oC

= 3 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

500

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

PowerTrench

MOSFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

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Page 5

FDMC7660DC N-Channel Dual Cool

0 102030405060

ID = 22 A

= 20 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10

100

1000

6000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10 100 300

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

120

160

Limited by Package

= 4.5 V

θJC

= 1.6 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100

0.01

0.1

100

500

100 us

100 ms

10 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAG E (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 105

C/W

= 25

10s

10-410-310-210-1110

100 1000

0.2

SINGLE PULSE R

θJA

= 105

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

Capacitance vs Drain

to Source Voltage

PowerTrench

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

Ma xi mum Co nti nuous Drain

Current vs Case Temperature

Figure 12.

Single Pu ls e M aximum

Power Dissipation

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Page 6

FDMC7660DC N-Channel Dual Cool

-4

-3

-2

-1

110

100 1000

0.0001

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 105 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU LSE D UR A TION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

PowerTrench

MOSFET

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Page 7

Dimensional Outline and Pad Layout

FDMC7660DC N-Channel Dual Cool

PowerTrench

MOSFET

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Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its globa l subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC7660DC N-Channel Dual Cool

PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the in dustry. All manufactures of semiconductor products are experi encing counterfeiting of their parts. Customers who inadvertently purchase counterfeit part s experi ence ma ny pr oblems such as lo ss of brand r eput ation, sub stan dard perfor mance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild part s either di rectly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fai r child’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct o r from authorized distr ibutors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any ti me without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I51

FDMC7660DC Rev.C3