Datasheet FDMC7660 Datasheet (Fairchild)

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Page 1

FDMC7660

Top

Power 33

Bottom

Pin 1

N-Channel PowerTrench® MOSFET

30 V, 20 A, 2.2 mΩ Features

 Max r  Max r  High performance technology for extremely low r  Termination is Lead-free and RoHS Compliant

= 2.2 mΩ at VGS = 10 V, ID = 20 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power been especially tailored to minimize the on-state resistance. device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Applications

 DC - DC Buck Converters  Point of Load  High Efficiency Load Switch and Low Side Switching

FDMC7660 N-Channel PowerTrench

June 2012

Trench® process that has

This

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25°C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 200 mJ Power Dissipation TC = 25°C 41 Power Dissipation T Operating and Storage Junction Temperature Range -55 to + 150 °C

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7660 FDMC7660 Power 33 13’’ 12

Thermal Resistance, Junction to Case 3 Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25°C unless otherwise noted

= 25°C 100

= 25°C (Note 1a) 20

= 25°C (Note 1a) 2.3

mm 3000 units

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°C/W

Page 2

FDMC7660 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current V

= 250 μA, VGS = 0 V30 V

= 250 μA, referenced to 25°C 14 mV/°C

= 24 V, V

= 20 V, V

= 0 V1μA

= 0 V 100nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 250 μA, referenced to 25°C -6 mV/°C

= 10 V, ID = 20 A 1.82.2

= 4.5 V, ID = 18 A2.63.3

= 10 V, ID = 20 A, T

= 5 V, ID = 20 A 163 S

= 250 μA 1.2 1.7 2.5 V

= 125°C 2.2 3.1

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1345 1790 pF Reverse Transfer Capacitance 110 165 pF Gate Resistance 0.9 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 6.8 14 ns Turn-Off Delay Time 36 58 ns Fall Time 5.7 11 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 11 nC Gate to Drain “Miller” Charge 5.6 nC

= 15 V, VGS = 0 V,

f = 1MHz

= 15 V, ID = 20 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 4.5 V2438nC

GEN

= 6 Ω

= 20 A

= 15 V,

3630 4830 pF

14 25 ns

54 86 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 20 A (Note 2) 0.8 1.2

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

Source-Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 25 35 nC

is determined by the user’s board design.

θJA

53 °C/W when mounted on a

= 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V

1 in

pad of 2 oz copper

= 0 V, IS = 1.9 A (Note 2) 0.7 1.2

= 20 A, di/dt = 100 A/μs

45 63 ns

125 °C/W when mounted on a minimum pad of 2 oz copper

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FDMC7660 N-Channel PowerTrench

0.0 0.5 1.0 1.5 2 .0

100

150

200

VGS = 4.5 V

VGS = 3.5 V

VGS = 3 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 50 100 150 200

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 4 V

VGS = 4.5 V

VGS = 3 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 20 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATUR E (

246810

TJ = 125oC

ID = 20 A

TJ = 25 oC

, GATE TO S OURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1234

100

150

200

TJ = 150 oC

= 5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E VO LTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

200

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

MOSFET

No rm al iz ed On -R es is ta nc e

vs Drain Current and Gate Voltage

Fi gur e 3. No rma lized On R esist anc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Dio de

Forward Voltage vs Source Current

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Page 4

FDMC7660 N-Channel PowerTrench

0204060

ID = 20 A

= 20 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10

0.05

0.1

f = 1 MHz V

= 0 V

CAPACITANCE (nF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10 100 300

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVAL ANCH E (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

100

150

Limited by Package

= 4.5 V

θJC

= 3 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100

0.01

0.1

100

300

DERIVED FROM TESTED DATA

1 ms

1 s

10 ms

10 s

100 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

-3

-2

-1

0.5

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

MOSFET

Ca pacit an ce vs Dr ain

to Source Voltage

Figure 9.

Un c la mp e d I nd u ct iv e

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

Max imum Con tinu ous Drai n

Current vs Case Temperature

Figure 12.

Single Pu lse Maximum

Power Dissipation

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Page 5

FDMC7660 N-Channel PowerTrench

-3

-2

-1

100 1000

1E-3

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

MOSFET

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Page 6

FDMC7660 N-Channel PowerTrench

Dimensional Outline and Pad Layout

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trade marks and service marks, o wned by Fairchild Semicond uctor and/or its g lobal subsidiaries, and i s not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC7660 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or ( b) su pport or susta in life , and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the indust ry. All manufactures of semiconductor products are experiencin g counterfeiting of their

parts. Customers who inadvertently purchase coun te rfei t part s expe rien ce many probl ems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing del ays. Fairch ild is taking stro ng measure s to prot ect ourselves and our customers fro m the proliferation of counterfeit parts. Fairchild strongly encou rages cust omers to purchase Fairchil d parts eit her directly from Fa irchild or from Author ized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s qua lity standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distrib utors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61