Datasheet FDMC7582 Datasheet (Fairchild)

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Page 1

FDMC7582

Top

Power 33

Bottom

Pin 1

N-Channel PowerTrench® MOSFET

25 V, 49 A, 5.0 mΩ

Features

 Max r

 State-of-the-art switching performance

 Lower output capacitance, gate resistance, and gate charge

boost efficiency

 Shielded gate technology reduces switch node ringing and

increases immunity to EMI and cross conduction

 Clip bonding technology further reduces On resistance and

source inductance

 RoHS Compliant

= 5.0 mΩ at VGS = 10 V, ID = 16.7 A

DS(on)

= 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r diode reverse recovery performance.

Application

 High side switching for high end computing

 High power density DC-DC synchronous buck

 Low loss load switch

 Communication & telecon Point of Load

FDMC7582 N-Channel PowerTrench

April 2012

DS(on), fast switching speed and body

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7582 FDMC7582 Power 33 13 ’’ 12 mm 3000 units

Drain to Source Voltage 25 V

Gate to Source Voltage (Note 3) ±20 V

Drain Current - Continuous (Package limited) Tc=25C 49

- Continuous (Silicon Limited) Tc=25C 76

- Continuous T

- Pulsed 60

Single Pulse Avalanche Energy (Note 4) 38 mJ

Power Dissipation TC = 25 °C 52

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 2.4

Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

= 25 °C (Note 1a) 16.7

= 25 °C (Note 1a) 2.3

°C/W

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Page 2

FDMC7582 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250 μA , VGS = 0 V 25 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = 20 V, V

Gate to Source Leakage Current, Forward VGS = 20 V, V

= 250 μA , referenced to 25 °C 19 mV/°C

= 0 V 1 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 1.7 2.5 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA , referenced to 25 °C -5 mV/°C

= 10 V, ID = 16.7 A 4.0 5.0

= 4.5 V, ID = 13.6 A 6.0 7.5

= 10 V, ID = 16.7 A,TJ = 125 °C 5.4 7.0

Forward Transconductance VDD = 5 V, ID = 16.7 A 58 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 372 495 pF

Reverse Transfer Capacitance 79 120 pF

Gate Resistance 0.1 0.9 2.9 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time

Rise Time 210ns

Turn-Off Delay Time 20 36 ns

Fall Time 1.6 10 ns

Total Gate Charge at 10V

Total Gate Charge at 4.5V 9.5 13 nC

Total Gate Charge 3.9 nC

Gate to Drain “Miller” Charge 2.5 nC

= 13 V, VGS = 0 V,

f = 1 MHz

= 13 V, ID = 16.7A,

= 10 V, R

= 13 V, ID = 16.7 A

GEN

= 6 Ω

1348 1795 pF

8.8 18 ns

20 28 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 16.7 A (Note 2) 0.8 1.3 V

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 mate rial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

4. E

AS of 38 mJ is based on starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 16 A, VDD = 23 V, VGS = 10 V.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 7 14 nC

53 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 2 A (Note 2) 0.7 1.2

= 16.7 A, di/dt = 100 A/μs

22 39 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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Page 3

FDMC7582 N-Channel PowerTrench

0123

VGS = 3 V

VGS = 3.5 V

VGS = 4 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 102030405060

VGS = 3 V

VGS = 5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

, DRAIN CURRENT (A)

VGS = 3.5 V

VGS = 4 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = 16.7 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

, JUNCTION TE MPERATURE (

246810

TJ = 125 oC

ID = 16.7 A

TJ = 25 oC

, GATE TO SOURCE VOLTA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0246

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

MOSFET

Nor mal ized O n-R esi sta nce

vs Drain Current and Gate Voltage

Figure 3. N or ma lized On Re si stance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Ga te to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

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FDMC7582 N-Channel PowerTrench

0 5 10 15 20

ID = 16.7 A

VDD = 13 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 16 V

0.1 1 10 30

100

1000

3000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10 100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

100

Limited by Package

= 4.5 V

θJC

= 2.4 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100200

0.01

0.1

100

100 μs

10 ms

10 s

100 ms

1 s

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VO LTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

VGS = 10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25°C unless otherwise noted

Figure 8.

Cap aci tan c e vs Dra in

to Source Voltage

MOSFET

Figure 9.

Unc l amp e d In d uct ive

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

Ma ximum Contin uous Drain

Current vs Case Temperature

Figure 12.

Single P ulse Ma ximum

Power Dissipation

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Page 5

FDMC7582 N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13.

= 25°C unless otherwise noted

Junction-to-Ambient Transient Thermal Response Curve

MOSFET

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Page 6

FDMC7582 N-Channel PowerTrench

Dimensional Outline and Pad Layout

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDMC7582 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

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As used here in:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61