Datasheet FDMC7572S Datasheet (Fairchild)

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Page 1

FDMC7572S

Top

Power 33

Bottom

Pin 1

4 3 2 1

5 6 7 8

D D

N-Channel Power Trench® SyncFET

25 V, 40 A, 3.15 mΩ Features

 Max r  Max r  Advanced Package and Silicon combination for low r

and high efficiency

 SyncFET Schottky Body Diode  100% UIL Tested  RoHS Compliant

= 3.15 mΩ at VGS = 10 V, ID = 22.5 A

DS(on)

= 4.7 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

General Description

The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r

while maintaining excellent switching performance. This

DS(on)

device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Notebook Vcore/ GPU low side switch  Networking Point of Load low side switch  Telecom secondary side rectification

FDMC7572S N-Channel Power Trench

August 2011

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 120 Single Pulse Avalanche Energy (Note 3) 84 mJ Power Dissipation TC = 25 °C 52 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 103

= 25 °C (Note 1a) 22.5

= 25 °C (Note 1a) 2.3

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7572S FDMC7572S Power 33 13 ’’ 12 mm 3000 units

Thermal Resistance, Junction to Case 2.4 Thermal Resistance, Junction to Ambient (Note 1a) 53

°C/W

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Page 2

FDMC7572S N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 10 mA, referenced to 25 °C 21 mV/°C

= 0 V 500 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 22.5 A 2.5 3.15

= 4.5 V, ID = 18 A 3.6 4.7

= 10 V, ID = 22.5 A, TJ = 125 °C 3.5 4.5

Forward Transconductance VDS = 5 V, ID = 22.5 A 122 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 596 795 pF Reverse Transfer Capacitance 134 205 pF

= 13 V, VGS = 0 V,

f = 1 MHz

2031 2705 pF

Gate Resistance 1.1 2.4 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 3.6 10 ns Turn-Off Delay Time 26 41 ns

= 13 V, ID = 22.5 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 3 10 ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 14 20 nC Gate to Source Gate Charge 6.5 nC

= 13 V

= 22.5 A

Gate to Drain “Miller” Charge 3.9 nC

11 22 ns

31 44 nC

mΩV

SyncFET

Drain-Source Diode Characteristics

= 0 V, IS = 22.5 A (Note 2) 0.79 1.2

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board o f FR-4 materi al. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMC7572S Rev.C1

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 19 34 nC

53 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 2 A (Note 2) 0.47 0.8

= 22.5 A, di/dt = 300 A/μs

24 39 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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Page 3

FDMC7572S N-Channel Power Trench

012345

120

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 2.5 V

VGS = 3 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 306090120

VGS = 4.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 3 V

VGS = 3.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 22.5 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTAN CE

, JUNCTION TEMPERATUR E (

246810

TJ = 125 oC

ID = 22.5 A

TJ = 25 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

120

TJ = 125 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics

= 25 °C unless otherwise noted

Figure 2.

Nor ma liz ed O n-Res ist anc e

vs Drain Current and Gate Voltage

SyncFET

Figur e 3 . Norm al ized O n- Res is tance

vs Junction Temperature

FDMC7572S Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC7572S N-Channel Power Trench

0 4 8 121620242832

= 22.5 A

VDD = 16 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 13 V

0.1 1 10

100

1000

3000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL TAGE (V)

rss

oss

iss

0.01 0.1 1 10 100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

120

Limited by Package

= 4.5 V

θJC

= 2.4 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100

0.01

0.1

100

200

1 ms

10 ms

100 ms

10 s

1 s

100 us

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AR E A IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

2000

VGS = 10 V

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 125 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Cap aci tan ce v s Dr ain

to Source Voltage

SyncFET

Figure 9.

Unc l amp ed In duc t ive

Switching Capability

FDMC7572S Rev.C1

Figure 11.

Operating Area

Forward Bias Safe

Fi gure 10. Maxim um Conti nuous Drain

Current vs Case Temperature

Figur e 12. Single Pul se Maximum

Power Dissipation

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Page 5

FDMC7572S N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

SyncFET

FDMC7572S Rev.C1

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Page 6

Typical Characteristics (continued)

0 5 10 15 20 25

-6

-5

-4

-3

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

0 50 100 150 200

-5

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

SyncFET Schottky body diode Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverses recovery characteristic of the FDMC7572S.

FDMC7572S N-Channel Power Trench

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

SyncFET

Figure 13. FDMC7572S SyncFET body

diode reverse recovery characteristic

FDMC7572S Rev.C1

Figure 14. SyncFET body diode reve rses leakage versus drain-source voltage

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Page 7

Dimensional Outline and Pad Layout

DETAIL A

SCALE: 2X

LAND PATTERN

RE COMMENDATION

PKG

SYM

SEE

DETAIL A

NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) IT IS RECOMMENDED TO HAVE NO TRACES

OR VIAS WITHIN THE KEEP OUT AREA.

F) DRAWING FILE NAME: PQFN08BREV2

SEATING PLANE

3.40

3.20

3.40

3.20

2.37 MIN

(0.45)

(0.40)

(0.65)

2.15 MIN

0.70 MIN

0.4 2 MI N0.65

1.95

0.65

1.95

0.37

0.27

0.10 C A B

0.50

0.30

(1.65)

2.09

1.89

(2.27)

0.52

(0.39)

(0.67)

(0.20)

1.00

0.85

0.10 C

0.08 C

0.23

0.18

0.05

0.00

KEEP OUT AREA

3.40

1.70

FDMC7572S N-Channel Power Trench

SyncFET

FDMC7572S Rev.C1

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Page 8

TRADEMARKS

™

The following includes registered and unregistered trademarks an d service marks, owned by Fairchi ld Semiconductor and/or it s global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™

® ®

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

FETBench™

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMC7572S N-Channel Power Trench

SyncFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. Al l manufactures of semiconductor products are experiencin g counterfeiting of their parts. Customers who inadvertently purchase counterfei t parts expe rience many problems such as loss of br and repu ta tion, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is ta ki ng stron g measures to prote ct ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild pa rts either di rectly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’ s ful l range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMC7572S Rev.C1

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specif ications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchil d Semiconductor. The datasheet is for reference information only.

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Rev. I55