Datasheet fdmc7570s Datasheet

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FDMC7570S

N-Channel Power Trench® SyncFET

25 V, 40 A, 2 mΩ Features

 Max r  Max r  Advanced Package and Combination for low r

efficiency

 SyncFET Schottky Body Diode  100% UIL Tested  RoHS Compliant

= 2 mΩ at VGS = 10 V, ID = 27 A

DS(on)

= 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A

DS(on)

and high

General Description

The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

while maintaining excellent switching performance. This

DS(on)

device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Notebook Vcore/ GPU low side switch  Networking Point of Load low side switch  Telecom secondary side rectification

FDMC7570S N-Channel Power Trench

December 2009

SyncFET

Top

Bottom

Pin 1

4 3 2 1

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 120 Single Pulse Avalanche Energy (Note 3) 144 mJ Power Dissipation TC = 25 °C 59 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 132

= 25 °C (Note 1a) 27

= 25 °C (Note 1a) 2.3

Thermal Characteristics

S S S

θJC

θJA

Thermal Resistance, Junction to Case 2.1 Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7570S FDMC7570S Power 33 13 ’’ 12 mm 3000 units

°C/W

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FDMC7570S N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

ID = 10 mA, referenced to 25 °C 21 mV/°C

= 0 V 500 µA

= 0 V 100 nA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3 V Gate to Source Threshold Voltage

Temperature Coefficient

ID = 10 mA, referenced to 25 °C -4 mV/°C VGS = 10 V, ID = 27 A 1.6 2

Static Drain to Source On Resistance

VGS = 10 V, ID = 27 A, TJ = 125 °C 2.2 2.8

Forward Transconductance VDS = 5 V, ID = 27 A 154 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1010 1345 pF Reverse Transfer Capacitance 168 255 pF

VDS = 13 V, VGS = 0 V, f = 1 MHz

3315 4410 pF

Gate Resistance 1.2 2.1 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 6.8 14 ns Turn-Off Delay Time 34 55 ns

VDD = 13 V, ID = 27 A, VGS = 10 V, R

GEN

= 6 Ω

14 26 ns

Fall Time 4.5 10 ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 22 31 nC Gate to Source Gate Charge 10.8 nC

VDD = 13 V I

= 27 A

49 68 nC

Gate to Drain “Miller” Charge 5.5 nC

mΩVGS = 4.5 V, ID = 21.5 A 2.4 2.9

SyncFET

Drain-Source Diode Characteristics

= 0 V, IS = 27 A (Note 2) 0.78 1.2

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR -4 ma teri al. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 29 46 nC

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. E

of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A

4. As an N-ch device, the negative Vgs rating is for lower duty cycle pulse occurrence only. No continuous rating is implied.

FDMC7570S Rev.C

= 0 V, IS = 2 A (Note 2) 0.43 0.8

IF = 27 A, di/dt = 300 A/µs

30 48 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

is determined by

θCA

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FDMC7570S N-Channel Power Trench

Typical Characteristics T

120

DRAIN CURRENT (A)

012345

Figure 1.

1.5

1.4

1.3

1.2

1.1

NORMALIZED

1.0

0.9

DRAIN TO SOURCE ON-RESISTANCE

0.8

-75 -50 -25 0 25 50 75 100 125 150

Figur e 3. No rm ali ze d On- R esista n c e

VGS = 10 V

VGS = 4.5 V

VGS = 3.3 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics

ID = 27 A

= 10 V

JUNCTION TEMPERATURE

vs Junction Temperature

= 25 °C unless otherwise noted

VGS = 3 V

VGS = 2.7 V

(

)

VGS = 2.7 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

0 306090120

Figure 2.

Nor maliz ed O n-R es ist anc e

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 3 V

VGS = 3.3 V

DRAIN CURRENT (A)

VGS = 4.5 V

= 10 V

vs Drain Current and Gate Voltage

)

Ω

(

ID = 27 A

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

GATE TO SOURCE VOLTA GE (V)

Figure 4.

On-Resistanc e vs Gate to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

TJ = 25 oC

Source Voltage

SyncFET

120

, DRAIN CURRENT (A)

1.0 1.5 2.0 2.5 3.0 3.5 4.0

FDMC7570S Rev.C

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

200

= 0 V

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

0.00.20.40.60.81.01.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drai n Dio de

, REVERSE DRAIN CURRENT (A)

100

0.1

0.01

Forward Voltage vs Source Current

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FDMC7570S N-Channel Power Trench

Typical Characteristics T

= 27 A

DSS

VDD = 13 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

0 1020304050

Figure 7.

, AVALANCHE CURRENT (A)

0.01 0.1 1 10 100 500

Figure 9.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

Un c l a mp e d I nd uc t i v e

Switching Capability

= 25 °C unless otherwise noted

VDD = 16 V

TJ = 100 oC

5000

1000

CAPACITANCE (pF)

100

f = 1 MHz

= 0 V

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

Cap a ci t an c e v s Dr a in

to Source Voltage

135

= 10 V

= 4.5 V

, DRAIN CURRENT (A)

Limited by Package

25 50 75 100 125 150

, CASE TEMPERATURE (

Figure 10.

Ma x imum Cont i nuous Dr a i n

θJC

= 2.1 oC/W

Current vs Case Temperature

iss

oss

rss

SyncFET

200 100

, DRAIN CURRENT (A)

0.1

0.01

0.01 0.1 1 10 100

FDMC7570S Rev.C

100 us

1ms

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

= 125 oC/W

= 25 oC

VDS, DRA IN to SOURCE VOLTAGE (V)

10 ms 100 ms

1 s 10 s

Figure 11. Forward Bias Safe

Operating Area

2000 1000

VGS = 10V

SINGLE PULSE

= 125 oC/W

= 25 oC

100

, PEAK TRANSIENT POWER (W)

(PK)

0.5 10-410-310-210-1110

t, PULSE WIDTH (sec)

100 1000

Figure 1 2. Single Pul se Max imum

Power Dissipation

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FDMC7570S N-Channel Power Trench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.1

0.01

0.2

0.1

0.05

0.02

0.01

-4

-3

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

NORMALIZED THERMAL

IMPEDANCE,

0.001

0.0005

= 25 °C unless otherwise noted

SINGLE PULSE R

= 125 oC/W

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

110

+ T

θJA

100 1000

SyncFET

FDMC7570S Rev.C

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Page 6

Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMC7570S N-Channel Power Trench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMC7570S.

CURRENT (A)

-5 0 50 100 150 200

di/dt = 300 A/µs

TIME (ns)

Figure 14. FDMC7570S SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

-2

-3

-4

-5

, REVERSE LEAKAGE CURRENT (A)

-6

DSS

0 5 10 15 20 25

VDS, REVERSE VOLTAGE (V)

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

Figure 15. SyncFET body diode reve rses leakage versus drain-source voltage

SyncFET

FDMC7570S Rev.C

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Page 7

Dimensional Outline and Pad Layout

FDMC7570S N-Channel Power Trench

SyncFET

FDMC7570S Rev.C

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Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and ser vice marks, owned by Fairchild Semiconductor and/or its global subsidia ries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™

® ®

FETBench™

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™

RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC7570S N-Channel Power Trench

SyncFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or ( b) su pport or sustai n li fe, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencin g counterfeiting of their parts. Customers who inadvertently purchase counterfe it parts e xperi en ce many prob lems such a s loss of b rand rep utati on, substa nda rd perf orman ce, fa iled

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel ve s and our customers from the proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairchi ld parts either directly from Fa irchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

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committed to combat this global problem and encourage o ur customers to do their part in stopping this practice b y buying direct or from authorized dist ributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Productio n

No Identification Needed Full Production

Obsolete Not In Production

FDMC7570S Rev.C

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I45