Datasheet FDMC6679AZ Datasheet (Fairchild)

Page 1

FDMC6679AZ

P-Channel PowerTrench® MOSFET

-30 V, -20 A, 10 mΩ Features

 Max r  Max r  HBM ESD protection level of 8 kV typical(note 3)  Extended V  High performance trench technology for extremely low r  High power and current handling capability  Termination is Lead-free and RoHS Compliant

= 10 mΩ at VGS = -10 V, ID = -11.5 A

DS(on)

= 18 mΩ at VGS = -4.5 V, ID = -8.5 A

DS(on)

range (-25 V) for battery applications

GSS

DS(on)

General Description

The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest r

and ESD protection.

DS(on)

Applications

 Load Switch in Notebook and Server  Notebook Battery Pack Power Management

FDMC6679AZ P-Channel PowerTrench

July 2009

MOSFET

Top

Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V Gate to Source Voltage ±25 V Drain Current -Continuous (Package limited) TC = 25 °C -20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -32 Power Dissipation TC = 25 °C 41 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C -51

= 25 °C (Note 1a) -11.5

= 25 °C (Note 1a) 2.3

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 3 Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC6679AZ FDMC6679AZ MLP 3.3x3.3 13 ’’ 12 mm 3000 units

°C/W

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Page 2

FDMC6679AZ P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current VGS = ±25 V, V

= -250 µA, referenced to 25 °C 29 mV/°C

= -24 V, -1

= 0 V, TJ = 125 °C -100

= 0 V ±10 µA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA-1-1.8-3V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 µA, referenced to 25 °C -7 mV/°C

= -10 V, ID = -11.5 A 8.6 10

= -4.5 V, ID = -8.5 A 12 18

= -10 V , ID = -11.5 A, TJ = 125 °C 12 15

Forward Transconductance VDS = -5 V, ID = -11.5 A 46 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 570 755 pF Reverse Transfer Capacitance 500 750 pF

= -15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 4.3 Ω

2985 3970 pF

µA

mΩV

MOSFET

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 14 25 ns Turn-Off Delay Time 63 100 ns Fall Time 46 73 ns Total Gate Charge VGS = 0 V to -10 V Total Gate Charge VGS = 0 V to -5 V 37 52 nC Gate to Source Charge 8.7 nC Gate to Drain “Miller” Charge 17 nC

= -15 V, ID = -11.5 A,

= -10 V, R

GEN

= 6 Ω

Drain-Source Diode Characteristics

= 0 V, IS = -11.5 A (Note 2) 0.83 1.30

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 16 28 nC

a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = -1.6 A (Note 2) 0.71 1.20

= -11.5 A, di/dt = 100 A/µs

= -15 V,

= -11.5 A

12 21 ns

65 91 nC

31 49 ns

is guaranteed by design while R

θJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. The diode connected bet ween the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

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Page 3

FDMC6679AZ P-Channel PowerTrench

Typical Characteristics T

, DRAIN CURRENT (A)

-I

0123

Figure 1.

1.6

ID = -11.5 A V

= -10 V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

VGS = -10 V

VGS = -6 V

VGS = -4.5 V

VGS = -4 V

VGS = -3.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

-V

, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

= 25 °C unless otherwise noted

VGS = -3 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = -3.5 V

NORMALIZED

= -4 V

VGS = -4.5 V

= -10 V

DRAIN TO SOURCE ON-RESISTANCE

VGS = -6 V

0 8 16 24 32

-I

, DRAIN CURRENT (A)

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

ID = -11.5 A

(mΩ)

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

TJ = 25 oC

-V

, GATE TO SOURCE VOL TA G E (V)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

MOSFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= -5 V

, DRAIN CURRENT (A)

-I

1234

TJ = 25 oC

TJ = 150 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance v s Gate to

Source Voltage

= 0 V

TJ = 150 oC

TJ = -55 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sou rce to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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FDMC6679AZ P-Channel PowerTrench

Typical Characteristics T

ID = -11.5 A

, GATE TO SOURCE VOLTAGE (V)

-V

0 10203040506070

Figure 7.

, AVALANCHE CURRENT (A)

-I

0.001 0.01 0.1 1 10 100

VDD = -15 V

= -10 V

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

= 25 °C unless otherwise noted

VDD = -20 V

TJ = 25 oC

TJ = 100 oC

10000

1000

CAPACITANCE (pF)

f = 1 MHz V

= 0 V

100

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Capacitance vs Drain

to Source Voltage

= -4.5 V

, DRAIN CURRENT (A)

-I

Limited by Package R

θJC

25 50 75 100 125 150

= 3.0 oC/W

, CASE TEMPERATURE (

= -10 V

iss

oss

rss

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

, DRAIN CURRENT (A)

-I

0.01

THIS AREA IS

0.1

LIMITED BY r

SINGLE PULSE T

= MAX RATED

= 125 oC/W

= 25 oC

DS(on)

0.01 0.1 1 10 100

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 10.

Ma xi mum Co nti nuous Drain

Current vs Case Temperature

-2

= 0 V

-3

1 ms

10 ms

100 ms

1 s

10 s

-4

-5

-6

-7

GATE LEAKAGE CURRENT (A)

-I

-8

0 5 10 15 20 25 30 35

TJ = 125 oC

-V

GATE TO SOU R CE VOLTAGE (V)

Figure 12.

TJ = 25 oC

Igss vs Vgss

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FDMC6679AZ P-Channel PowerTrench

Typical Characteristics T

1000

VGS = -10 V

100

SINGLE PULSE R

= 125 oC/W

, PEAK TRANSIENT POWER (W)

(PK)

θJA

= 25 oC

0.3

-3

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

-2

Figure 13.

= 25 °C unless otherwise noted

-1

t, PULSE WIDTH (sec)

Single Pulse Maximum Power Dissipation

110

100 1000

MOSFET

IMPEDANCE,

0.01

NORMALIZED THERMAL

SINGLE PULSE R

= 125 oC/W

0.001

θJA

-3

Figure 14.

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

110

Junction-to-Ambient Transient Thermal Response Curve

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

+ T

θJA

100 1000

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Page 6

Dimensional Outline and Pad Layout

FDMC6679AZ P-Channel PowerTrench

0.10 C

PIN#1 QUADRANT

0.8 MAX

0.10 C

0.08 C

SEATING

PLANE

PIN #1 IDENT

0.55

(4X)

0.45

0.05

0.00

1.150

3.30

TOP VIEW

SIDE VIEW

2.32

2.22

0.785

3.30

0.10 C

RECOMMENDED LAND PATTE RN

(0.203)

0.350

MOSFET

R0.150

0.299

0.65

A. DOES NOT CONFORM TO JEDEC

REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS

BASED ON FSC DESIGN ONLY

0.40

0.30

1.95

BOTTOM VIEW

2.05

1.95

(8X)

0.10 CAB

0.05

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Page 7

TRADEMARKS

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconduct or and/or its global sub sidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

® ®

FPS™ F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMC6679AZ P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the indust ry. All manufactures o f semiconductor products are exper iencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputat ion, su bstandard pe rformance, f ailed application, and increased cost of production and manufacturing delays. Fairchil d is taking st ron g measures to protect ourselve s and our custo mers from the proliferation of counterfeit parts. Fairchild strongl y encourages cust omers to purchase Fairchild parts either d irectly fr om Fairchild or from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I41