Page 1
FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 m:
Features
Max r
Max r
HBM ESD protection level of 8 kV typical(note 3)
Extended V
High performance trench technology for extremely low r
High power and current handling capability
Termination is Lead-free and RoHS Compliant
= 14.4 m: at VGS = -10 V, ID = -9.5 A
DS(on)
= 27.0 m: at VGS = -4.5 V, ID = -6.9 A
DS(on)
range (-25 V) for battery applications
GSS
DS(on)
September 2010
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
and ESD protection.
r
DS(on)
Application
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
FDMC6675BZ P-Channel PowerTrench
®
MOSFET
Top
Pin 1
S
Bottom
5
G
S
S
D
D
D
D
D
6
D
7
D
8
D
MLP 3.3x3.3
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Package limited) TC= 25 °C -20
-Continuous (Silicon limited) T
-Continuous T
-Pulsed -32
Power Dissipation TC = 25 °C 36
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C -40
C
= 25 °C (Note 1a) -9.5
A
= 25 °C (Note 1a) 2.3
A
Thermal Characteristics
G
4
3
S
2
S
S
1
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 3.4
Thermal Resistance, Junction to Ambient (Note 1a) 53
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC6675BZ FDMC6675BZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
°C/W
1
www.fairchildsemi.com
Page 2
FDMC6675BZ P-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
= -250 PA, referenced to 25 °C 20 mV/°C
D
V
DS
V
GS
= -24 V,
= 0 V
= 125 °C -100
T
J
-1
Gate to Source Leakage Current VGS= ±25 V, VDS = 0 V ±10 PA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA -1.0 -1.9 -3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 PA, referenced to 25 °C -6 mV/°C
D
V
= -10 V, ID = -9.5 A 10.7 14.4
GS
= -4.5 V, ID = -6.9 A 17.4 27.0
GS
= -10 V, ID = -9.5 A, TJ = 125 °C 15.2 20.5
V
GS
Forward Transconductance VDD = -5 V, ID = -9.5 A 28 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 392 525 pF
Reverse Transfer Capacitance 349 525 pF
= -15 V, VGS = 0 V,
V
DS
f = 1 MHz
2154 2865 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 44 71 ns
= -15 V, ID = -9.5 A,
V
DD
V
= -10 V, R
GS
GEN
= 6 :
Fall Time 26 42 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 6.4 nC
= 0 V to -10 V
GS
= 0 V to -5 V 26 37 nC
GS
V
DD
I
= -9.5 A
D
= -15 V,
Gate to Drain “Miller” Charge 13 nC
11 20 ns
46 65 nC
m:V
PA
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS= -9.5 A (Note 2) 0.89 1.3 V
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. The diode connected between the gate and source ser vers only as protection ag ainst ESD. No gate overvoltage rating is implied.
FDMC6675BZ Rev.D3
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 15 27 nC
a. 53 °C/W when mounted on
a 1 in2pad of 2 oz copp er
GS
= 0 V, IS= -1.6 A (Note 2) 0.73 1.2 V
V
GS
= -9.5 A, di/dt = 100 A/Ps
I
F
2©2010 Fairchild Semiconductor Corporation
24 38 ns
is guaranteed by design while R
TJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
is determined by
TCA
www.fairchildsemi.com
Page 3
FDMC6675BZ P-Channel PowerTrench
Typical Characteristics T
32
24
16
DRAIN CURRENT (A)
,
D
8
-I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 1.
1.6
ID = -9.5 A
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
VGS = -4 V
VGS = -4.5 V
VGS = -6 V
VGS = -10 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
,
-V
DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics
= -10 V
,
T
JUNCTION TEMPERATURE
J
vs Junction Temperature
= 25 °C unless otherwise noted
J
VGS = -3.5 V
o
(
)
C
5.0
4.5
VGS= -3.5 V
4.0
3.5
3.0
2.5
2.0
NORMALIZED
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 8 16 24 32
-I
Figure 2.
N o r m a l i z e d O n - R e s i s t a n c e
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5%MAX
, DRAIN CURRENT (A)
D
VGS = -4 V
V
V
VGS = -10 V
GS
GS
= -4.5 V
= -6 V
vs Drain Current and Gate Voltage
50
)
:
m
40
(
30
DRAIN TO
,
20
DS(on)
r
10
SOURCE ON-RESISTANCE
0
246810
-V
GATE TO SOURCE VOLTAGE (V)
,
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
ID= -9.5 A
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
MOSFET
32
24
16
, DRAIN CURRENT (A)
8
D
-I
0
012345
Figure 5. Transfer Characteristics
FDMC6675BZ Rev.D3
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
= -5 V
DS
TJ = 150 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
100
VGS= 0 V
10
TJ= 150 oC
TJ = 25 oC
0.1
, REVERSE DRAIN CURRENT (A)
S
-I
0.01
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55 oC
Forward Voltage vs Source Current
3©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Page 4
FDMC6675BZ P-Channel PowerTrench
Typical Characteristics T
10
ID= -9.5 A
8
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
-V
0
0 1020304050
Figure 7.
50
10
, AVALANCHE CURRENT (A)
AS
-I
1
0.001 0.01 0.1 1 10 100
Fi gu re 9. Un cla mp ed In du cti ve
S w i t c h i n g C a p a b i l i t y
VDD = -10 V
Qg, GATE CHARGE (nC)
Gate Charge Characteristics
TJ= 25 oC
TJ= 125 oC
tAV, TI ME IN AV ALANCHE ( ms)
= 25 °C unless otherwise noted
J
VDD = -15 V
V
= -20 V
DD
TJ= 100 oC
5000
C
1000
C
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
100
0.1 1 10 30
-VDS, DRAIN TO SOURCE VOLT AGE (V)
Figure 8.
C a p a c i t a n c e v s D r a i n
C
to Source Voltage
50
40
VGS= -4.5 V
30
V
= -10 V
GS
20
DRAIN CURRENT (A)
,
D
-I
10
0
25 50 75 100 125 150
Figure 10.
Limited by Package
R
= 3.4 oC/W
T
JC
T
,
CASE TEMPERATURE
C
o
(
C
)
M a x i m u m C o n t i n u o u s D r a i n
C u r r e n t v s C a s e T e m p e r a t u re
iss
oss
rss
®
MOSFET
70
10
1
, DRAIN CURRENT (A)
0.1
D
-I
0.01
0.01 0.1 1 10 100
Figure 11.
FDMC6675BZ Rev.D3
THIS AREA IS
LIMITED BY r
SINGLE PULSE
= MAX RATE D
T
J
R
T
JA
T
= 25 oC
A
DS(on)
= 125 oC/W
-VDS, DRAIN to SOURCE VOLTAGE (V)
F or w a rd B ia s S af e
Operating Area
1 ms
10 ms
100 ms
1 s
10 s
DC
-4
10
V
= 0V
GS
-5
10
-6
10
-7
10
-8
10
GATE LEAKAGE CURRENT(A)
,
g
-I
-9
10
0 5 10 15 20 25 30
4©2010 Fairchild Semiconductor Corporation
TJ= 150oC
,
-V
GATE TO SOURCE VOLTAGE(V)
GS
Figure 12. I
gss
vs V
TJ= 25oC
gss
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Page 5
FDMC6675BZ P-Channel PowerTrench
Typical Characteristics T
1000
100
10
, PEAK TRANSIENT POWER (W)
1
(PK)
P
0.3
-3
10
2
1
JA
T
0.1
IMPEDANCE, Z
0.01
NORMALIZED THERMAL
0.001
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
-2
10
Figure 13. Single Pulse Maximum
-2
10
= 25 °C unless otherwise noted
J
VGS = -10 V
-1
10
t, PULSE WIDTH (sec)
SINGLE PULSE
R
= 125 oC/W
T
JA
-1
10
t, RECTANGULAR PULSE DURATION (sec)
SINGLE PULSE
= 125 oC/W
R
JA
T
T
= 25 oC
A
110
Power Dissipation
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
110
100 1000
P
DM
t
1
t
2
2
x R
+ T
TJA
TJA
A
100 1000
®
MOSFET
FDMC6675BZ Rev.D3
Figure 14.
Junction-to-Ambient Transient Thermal Response Curve
5©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMC6675BZ P-Channel PowerTrench
®
MOSFET
FDMC6675BZ Rev.D3
6©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Page 7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
®
®
EfficientMax™
ESBC™
®
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
FRFET
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
®
®
®
®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®
*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
FDMC6675BZ P-Channel PowerTrench
®
®
MOSFET
DISCLAIMER
FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE
RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMC6675BZ Rev.D3
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
7©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. I48
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