Datasheet FDMC6296 Datasheet (Fairchild)

Download

Page 1

FDMC6296

D D

Bottom

Top

Pin 1

MLP 3.3X3.3

Single N-Channel Logic-Level Power Trench® MOSFET

30 V, 11.5 A, 10.5 mΩ

Features

 Max r  Max r  Low Qg, Qgd and Rg for efficient switching performance  RoHS Compliant

= 10.5 mΩ at VGS = 10 V, ID = 11.5 A

DS(on)

= 15 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

General Description

This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between used as a “high side” control swtich or “low side” synchronous rectifier.

and gate charge this device can be effectively

DS(on)

FDMC6296 N-Channel Power Trench

November 2010

Application

 Point of Load Converters  1/16 Brick Synchronous Rectifier

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current -Continuous TA = 25 °C (Note 1a) 11.5 A

-Pulsed 40 Power Dissipation TC = 25 °C 2.1 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1a) 0.9

Thermal Characteristics

MOSFET

θJC

θJA

Thermal Resistance, Junction to Case (Note 1) 3 Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC6296 FDMC6296 MLP 3.3X3.3 13 ’’ 12 mm 3000 units

°C/W

www.fairchildsemi.com

Page 2

FDMC6296 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 26 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.83V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 11.5 A 8.7 10.5

= 4.5 V, ID = 10 A 10.6 15

= 10 V , ID = 11.5 A, TJ = 125 °C 13 17

Forward Transconductance VDD = 5 V, ID = 11.5 A 49 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 406 540 pF Reverse Transfer Capacitance 150 225 pF Gate Resistance VGS = 0 V, f = 1 MHz 0.9 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 27 43 ns Fall Time 816ns Total Gate Charge at 5V Total Gate Charge 4nC Gate to Drain “Miller” Charge 4 nC

= 15 V, VGS = 0 V,

f = 1 MHz

= 15 V, ID = 1.0 A,

= 10 V, R

= 5 V

= 15 V,

= 11.5 A

GEN

= 6 Ω

1610 2141 pF

10 20 ns

14 19 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board o f FR-4 ma teri al. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 22 nC

53 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 2 A (Note 2) 0.7 1.2 V

= 11.5 A, di/dt = 100 A/μs

θJC

30 ns

is guaranteed by design while R

125 °C/W when mounted on a minimum pad of 2 oz copper

θCA

is determined by

www.fairchildsemi.com

Page 3

FDMC6296 N-Channel Power Trench

0.0 0.5 1.0 1.5 2.0

VGS = 4 V

VGS = 3.5 V

VGS = 4.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

VGS = 3 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 4 V

VGS = 4.5 V

VGS = 3.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 11.5 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

, JUNCTION TEMPERATURE (

246810

TJ = 125 oC

ID = 11.5 A

TJ = 25 oC

, GATE TO SOURCE VOLTA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

012345

TJ = 125 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics

= 25°C unless otherwise noted

Figure 2.

Nor mal ized O n-R esi sta nce

vs Drain Current and Gate Voltage

MOSFET

Fi gure 3. N or ma lized On Re si stance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drai n Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDMC6296 N-Channel Power Trench

0 3 6 9 12 15

ID = 11.5 A

VDD = 20 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10 30

100

1000

3000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.1 1 10 100 200

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AV ALANCHE (m s )

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 4.5 V

θJA

= 53 oC/W

= 10 V

, DRAIN CURRENT (A)

, AMBIENT TEMPERATURE (

0.01 0.1 1 10 100200

0.05

0.1

10 ms

10 s

100 ms

1 s

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

-3

-2

-1

110

100 1000

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

VGS = 10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

Cap aci tan c e vs Dra in

to Source Voltage

MOSFET

Figure 9.

Unc l amp e d In d uct ive

Switching Capability

erating Area

Figure 11. Forward Bias Safe

Figure 10.

Ma ximum Cont in uous Drain

Current vs Ambient Temperature

Figure 12.

Single P ulse M aximum

Power Dissipation

www.fairchildsemi.com

Page 5

FDMC6296 N-Channel Power Trench

-3

-2

-1

110

100 1000

0.005

0.01

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

MOSFET

www.fairchildsemi.com

Page 6

Dimensional Outline and Pad Layout

FDMC6296 N-Channel Power Trench

MOSFET

www.fairchildsemi.com

Page 7

TRADEMARKS

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconduct or and/or its global sub sidiaries, and is no t intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

The Power Franchise The Right Technology for Y ou r Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC6296 N-Channel Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the indust ry. All manufactures of semiconductor products are experiencin g counterfeiting of their parts. Customers who inadvertently purchase coun te rfei t part s expe rien ce many probl ems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing del ays. Fairch ild is taking stro ng measure s to prot ect ourselves and our customers fro m the

proliferation of counterfeit parts. Fairchild strongly encou rages customer s to purchase Fairchild parts either direct ly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s qua lity standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distrib utors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the righ t to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I51