Page 1
FDMC5614P
P-Channel PowerTrench
-60V, -13.5A, 100mΩ
Features
Max r
DS(on)
Max r
DS(on)
Low gate charge
Fast switching speed
High per
High power and current handling capability
RoHS Co
0mΩ at V
= 10
= 135mΩ at VGS = -4.5V, ID = -4.4A
formance trench technology for extr
mpliant
= -10V, ID = -5.7A
GS
emely low r
®
MOSFET
General Description
This P-Channel MOSFET is a rug
Semiconductor's advanced PowerTrench
optimized for
range of gate drive voltage ratings (4.5V-20V).
DS(on)
Application
Power management
Load switch
Battery protection
power management applications requiring a wide
September 2010
tm
ged gate version of Fairchild
®
process. It has been
FDMC5614P P-Channel PowerTrench
®
MOSFET
Top
Pin 1
Bottom
G
S
S
S
D
D
D
D
5
D
D
6
D
7
D
8
MLP 3.3x3.3
MOSFET Maximum Ratings T
Symbol Parameter R
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Charac
Drain to Source Voltage -60 V
Gate to Source Voltage ±
Drain Current -Continuous (Package limited) TC = 25°C -13.5
-Continuous (Silicon lim
-Continuous T
-Pulsed -23
Power Dissipati
er Dissipation T
Pow
Operating and Storage Junction Temperatu
on T
teristics
= 25°C unless otherwise noted
A
ited) T
re Range -55 to +150 °C
= 25°C -14
C
= 25°C
A
= 25°C 42
C
= 25°C (
A
(Note 1a) -5.7
Note 1a) 2.1
4
G
3
S
2
S
S
1
atings Units
20 V
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to C
Therm
al Resistance, Junction to Ambient (Note 1a) 60
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
5614P FDMC5614P Power 33 7’’ 8mm 3000 units
©2010 Fairchild Semicond
FDMC5614P Rev.C1
uctor Corporation
ase 3.0
1
°C/W
www.fairchildsemi.com
Page 2
FDMC5614P P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V -60 V
Breakdown Voltage Temperature
Coefficient
I
= -250μA, referenced to 25°C -54 mV/°C
D
Zero Gate Voltage Drain Current VDS = -48V, VGS = 0V -1 μA
Gate to Source Leakage Current VGS = ±20V, V
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = -250μA -1 -1.95 -3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = -15V, ID = -5.7A 11 S
= -250μA, referenced to 25°C 4.7 mV/°C
I
D
V
= -10V, ID = -5.7A 84 100
GS
= -4.5V, ID = -4.4A 108 135
GS
= -10V, ID = -5.7A , TJ = 125°C 140 168
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 140 185 pF
Reverse Transfer Capacitance 60 90 pF
V
= -30V, VGS = 0V,
DS
f = 1MHz
795 1055 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 11 23 ns
Turn-Off Delay Time 32 65 ns
VDD = -30V, ID = -1A
= -10V, R
V
GS
GEN
= 6Ω
Fall Time 11 22 ns
Total Gate Charge at 10V V
Gate to Source Gate Charge 1.6 2.1 nC
Gate to Drain “Miller” Charge 2.7 3.5 nC
GS
V
DD
= -5.7A
I
D
= -10V
= -30V
10 21 ns
15 20 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1: R
θJA
user's board design.
(a)R
θJA
(b)R
θJA
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FDMC5614P Rev.C1
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 29 nC
= 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
= 135°C/W when mounted on a minimum pad of 2 oz copper.
GS
= -3.2A, di/dt = 100A/μs
I
F
a. 60°C/W when mounted on
a 1 in2 pa d o f 2 oz co pp er
= 0V, IS = -3.2A -0.8 -1.2 V
36 ns
is guaranteed by design while R
θJC
b.135°C/W when mounted on a
minimum pad of 2 oz copper
2
is determined by the
θJA
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Page 3
FDMC5614P P-Channel PowerTrench
Typical Characteristics T
25
20
15
10
, DRAIN CURRENT (A)
5
D
-I
0
012345
Figure 1.
2.0
1.8
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
0.4
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
30
25
20
15
10
, DRAIN CURRENT (A)
D
5
-I
0
0123456
Figure 5. Transfer Characteristics
VGS = -10V
VGS = -5V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
ID = -5.7A
= -10V
V
GS
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
V
= -5V
DD
TJ = 125oC
TJ =-55oC
-VGS, GATE TO SOURCE VOLTAGE (V)
= 25°C unless otherwise noted
J
VGS = -4.5V
VGS =
-3.5V
VGS = -3.0V
TJ = 25oC
2.0
1.8
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0 5 10 15 20 25
VGS = -3.0V
VGS = -3.5V
-ID, DRAIN CURRENT(A)
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
VGS = -4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
, DRAIN TO
DS(on)
r
350
ID = -5.7A
o
T
C
= 25
J
2345678910
-VGS, GATE TO SOURCE VOLTAGE (V)
O n - R es i s t a n c e vs G a t e t o
(mOHM)
SOURCE ON-RESISTANCE
300
250
200
150
100
50
Figure 4.
PULSE DURATION =300μs
DUTY CYCLE = 2.0%MAX
TJ = 125oC
Source Voltage
30
V
= 0V
GS
TJ = 125oC
1
TJ = 25oC
TJ = -55oC
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
0.01
1E-3
, REVERSE DRAIN CURRENT (A)
S
-I
1E-4
10
0.1
Forward Voltage vs Source Current
VGS = -5V
VGS = -10V
®
MOSFET
FDMC5614P Rev.C1
3
www.fairchildsemi.com
Page 4
FDMC5614P P-Channel PowerTrench
Typical Characteristics T
10
ID = -5.7A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
0481216
Qg, GATE CHARGE(nC)
Figure 7.
8
7
Gate Charge Characteristics Figure 8.
6
5
4
3
2
, AVALANCHE CURRENT(A)
AS
-I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
1000
100
10
V
TJ = 125oC
VGS = -10V
DD
VDD = -40V
= 25°C unless otherwise noted
J
= -20V
VDD = -30V
TJ = 25oC
2000
1000
C
iss
100
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
10
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
C
oss
C
rss
60
®
MOSFET
60
r
LIMITED
DS(on)
10
1
0.1
SINGLE PULSE
, DRAIN CURRENT (A)
D
0.01
-I
1E-3
= MAX RATED
T
J
R
= 135oC/W
θJA
o
C
= 25
T
A
0.1 1 10 100
100us
1ms
10ms
100ms
1s
10s
DC
200
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10.
F o r w a r d B i a s S a f e
Operating Area
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 TA–
I = I
------------------------
25
125
), PEAK TRANSIENT POWER (W)
PK
P(
0.5
FDMC5614P Rev.C1
1
-4
10
SINGLE PULSE
= 135oC/W
R
θJA
10
-3
Figure 11.
-2
10
t, PULSE WIDTH (s)
Single Pulse Maximum Power Dissipation
-1
10
0
10
4
1
10
2
10
3
10
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Page 5
FDMC5614P P-Channel PowerTrench
Typical Characteristics T
2
NORMALIZED THERMAL
0.0005
θJA
0.1
0.01
IMPEDANCE, Z
1E-3
1
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
-4
-3
10
= 25°C unless otherwise noted
J
NOTES:
= 135oC/W
-2
10
-1
10
10
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
0
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
P
DM
t
1
t
2
2
x R
+ T
θJA
θJA
A
1
2
10
3
10
®
MOSFET
FDMC5614P Rev.C1
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMC5614P P-Channel PowerTrench
®
MOSFET
FDMC5614P Rev.C1
6
www.fairchildsemi.com
Page 7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
®
®
EfficientMax™
ESBC™
®
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
FRFET
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
®
®
®
®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W /kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®
*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
FDMC5614P P-Channel PowerTrench
®
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMC5614P Rev.C1
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
7
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Rev. I48
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