Datasheet FDMC4435BZ Datasheet (Fairchild)

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Page 1

FDMC4435BZ

P-Channel Power Trench® MOSFET

-30 V, -18 A, 20 m:

Features

 Max r

 Extended V

 High performance trench technology for extremely low r

 High power and current handling capability

 HBM ESD protection level >7 kV typical (Note 4)

 100% UIL Tested

 Termination is Lead-free and RoHS Compliant

= 20 m: at VGS = -10 V, ID = -8.5 A

DS(on)

= 37 m: at VGS = -4.5 V, ID = -6.3 A

DS(on)

range (-25 V) for battery applications

GSS

DS(on)

September 2010

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

process that has

Applications

 High side in DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

FDMC4435BZ P-Channel Power Trench

MOSFET

Top

Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous (Package limited) TC= 25 °C -18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -50

Single Pulse Avalanche Energy (Note 3) 24 mJ

Power Dissipation TC = 25 °C 31

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C -32

= 25 °C (Note 1a) -8.5

= 25 °C (Note 1a) 2.3

Thermal Characteristics

TJC

TJA

Thermal Resistance, Junction to Case 4

Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC4435BZ FDMC4435BZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units

°C/W

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Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25 °C unless otherwise noted

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

= -250 PA, referenced to 25 °C - 22 mV/°C

= -24 V, -1

= 0 V, TJ = 125 °C -100

Gate to Source Leakage Current VGS = ±25 V, VDS= 0 V ±10 PA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA -1.0 -1.9 -3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= -250 PA, referenced to 25 °C 5.3 mV/°C

= -10 V, ID = -8.5 A 15 20

= -4.5 V, ID = -6.3 A 23 37

= -10 V, ID = -8.5 A,

= 125 °C

21 28

Forward Transconductance VDD = -5 V, ID = -8.5 A 24 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 295 395 pF

Reverse Transfer Capacitance 260 385 pF

= -15 V, VGS = 0 V,

f = 1 MHz

1540 2045 pF

Gate Resistance f = 1 MHz 5 :

FDMC4435BZ P-Channel Power Trench

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 612ns

Turn-Off Delay Time 34 55 ns

= -15 V, ID = -8.5 A,

= -10 V, R

GEN

= 6 :

Fall Time 20 36 ns

Total Gate Charge VGS = 0 V t o - 1 0 V

Total Gate Charge VGS = 0 V to -4.5 V 17 24 nC

Gate to Source Charge 5 nC

Gate to Drain “Miller” Charge 9 nC

Drain-Source Diode Characteristics

= 0 V, IS= -8.5A (Note 2) 0.92 1.5

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 11 nC

a. 53 °C/W when mounted on

pad of 2 oz copp er

a 1 i n

= 0 V, IS= -1.9 A (Note 2) 0.75 1.2

= -8.5 A, di/dt = 100 A/Ps

= -8.5 A

= -15 V,

is guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

10 20 ns

33 46 nC

22 ns

is determined by

TCA

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

of 24 mJ is based on starting T = 25 °C, L = 1 mH, I = -4 A.

4. The diode connected betwe en the gate and source servers only as protection against ESD. No gate overvolt age rating is implied.

= -7 A, V = -27 V, V = -10 V. 100% test at L = 3 mH, I

AS AS

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FDMC4435BZ P-Channel Power Trench

Typical Characteristics T

, DRAIN CURRENT (A)

-I

01234

Figure 1.

-V

On-Region Characteristics Figure 2.

1.6

ID = -8.5A V

= -10V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

VGS = -5V

VGS = -10V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

VGS = -4.5V

VGS = - 4V

VGS = -3.5V

4.0

3.5

3.0

VGS = -3.5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VGS = -4V

2.5

VGS = -4.5V

=-5V

NORMALIZED

2.0

1.5

1.0

= -10V

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 1020304050

DRAIN CURRENT(A)

-I

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

PULSE DURATION = 80Ps

(m:)

, DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

TJ= 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5%MAX

ID= -8.5A

TJ= 125oC

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VDS= -5V

, DRAIN CURRENT (A)

-I

12345

TJ= 150oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25oC

TJ = -55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

= 0V

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

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FDMC4435BZ P-Channel Power Trench

Typical Characteristics T

ID= -8.5A

, GATE TO SOURCE VOLTAGE(V)

-V

0 10203040

Figure 7.

Gate Charge Characteristics Figure 8.

= -10V

VDD = -20V

Qg, GATE CHARGE(nC)

= 25°C unless otherwise noted

VDD = -15V

TJ= 25oC

10000

1000

100

CAPACITANCE (pF)

f = 1MHz V

= 0V

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

VGS= -10V

VGS= -4.5V

iss

oss

rss

MOSFET

, AVALANCHE CURRENT(A)

-I

0.001 0.01 0.1 1 10 100

Figure 9.

TJ= 125oC

tAV, TIME IN AVALANCHE(ms)

U n c l a m p e d I n d u c t i v e

Switching Capability

100

THIS AREA IS LIMITED BY r

, DRAIN CURRENT (A)

0.1

-I

0.01

0.01 0.1 1 10 100

Figure 11.

DS(on)

SINGLE PULSE T

= MAX RATED

= 125oC/W

TJA

= 25oC

-VDS, DRAIN TO SOURCE VOLTAGE (V)

F or wa rd Bi as S af e

Operating Area

100us

1ms

10ms

100ms

10s

, DRAIN CURRENT (A)

-I

25 50 75 100 125 150

Figure 10.

Limited by Package

= 4oC/W

TJC

, Ambient TEMPERATURE (

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

-4

= 0V

-5

TJ= 125oC

-6

-7

GATE LEAKAGE CURRENT(A)

-I

-8

0 5 10 15 20 25 30

-V

GATE TO SOURCE VOLTAGE(V)

Figure 12.

Igss vs Vgss

TJ= 25oC

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FDMC4435BZ P-Channel Power Trench

Typical Characteristics T

100

, PEAK TRANSIENT POWER (W)

(PK)

0.5

-3

TJA

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-3

-2

Figure 13.

-2

= 25°C unless otherwise noted

VGS = -10V

-1

t, PULSE WIDTH (sec)

110

Single Pulse Maximum Power Dissipation

SINGLE PULSE

= 125oC/W

TJA

-1

t, RECTANGULAR PULSE DURATION (sec)

110

SINGLE PULSE

= 125oC/W

TJA

= 25oC

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

100 1000

1/t2

x R

+ T

TJA

100 1000

MOSFET

Figure 14. Transient Thermal Response Curve

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Dimensional Outline and Pad Layout

FDMC4435BZ P-Channel Power Trench

MOSFET

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK

EfficientMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench

PowerXS™ Programmable Active Droop™

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMC4435BZ P-Channel Power Trench

MOSFET

DISCLAIMER

FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. Fairchild w ill not pro vide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I48