Datasheet FDMC3612 Datasheet (Fairchild)

Download

Page 1

FDMC3612

D D

Bottom

Top

MLP 3.3x3.3

N-Channel Power Trench® MOSFET

100 V, 12 A, 110 mΩ

Features

 Max r  Max r  Low Profile - 1 mm max in Power 33

 100% UIL Tested  RoHS Compliant

= 110 mΩ at VGS = 10 V, ID = 3.3 A

DS(on)

= 122 mΩ at VGS = 6 V, ID = 3.0 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

 DC - DC Conversion  PSE Switch

February 2012

process that has

FDMC3612 N-Channel PowerTrench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC3612 FDMC3612 Power 33 13’’ 12

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 15 Single Pulse Avalanche Energy (Note 3) 32 mJ Power Dissipation TC = 25 °C 35 Power Dissipation T Operating and Storage Junction Temperature Range -55 to + 150 °C

Thermal Resistance, Junction to Case 3.5 Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

C A

= 25 °C 12 = 25 °C (Note 1a) 3.3

= 25 °C (Note 1a) 2.3

mm 3000 units

°C/W

www.fairchildsemi.com

Page 2

FDMC3612 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 109 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.5 4.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -7 mV/°C

= 10 V, ID = 3.3 A 92 110

= 6 V, ID = 3.0 A 98 122

= 10 V , ID = 3.3 A, TJ = 125 °C 177 212

Forward Transconductance VDS = 10 V, ID = 3.3 A 13 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 40 55 pF Reverse Transfer Capacitance 23 35 pF Gate Resistance 1.3 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 2.8 10 ns Turn-Off Delay Time 19 34 ns Fall Time 210ns Total Gate Charge V Total Gate Charge V Total Gate Charge 2.3 nC Gate to Drain “Miller” Charge 3.7 nC

= 50 V, VGS = 0 V,

f = 1 MHz

= 50 V, ID = 3.3 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 5 V 7.9 12 nC

= 6 Ω

GEN

VDD = 50 V, I

= 3.3 A

662 880 pF

7.4 15 ns

14.4 21 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 37 60 nC

a) 53 °C/W when mounted on a 1 in

V V

pad of 2 oz copper

= 0 V, IS = 3.3 A (Note 2) 0.88 1.2

= 0 V, IS = 2 A (Note 2) 0.77 1.2

= 3.3 A, di/dt = 100 A/μs

θJC

34 55 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

www.fairchildsemi.com

Page 3

FDMC3612 N-Channel PowerTrench

012345

VGS = 4 V

VGS = 3.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

03691215

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 6 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 4 V

VGS = 4.5 V

VGS = 3.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 3.3 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

100

200

300

400

TJ = 125 oC

ID = 3.3 A

TJ = 25 oC

, GATE TO SOURCE VOL TAG E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

2.0 2.5 3.0 3.5 4.0 4.5 5.0

TJ = 150 oC

= 5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics

= 25 °C unless otherwise noted

Figure 2.

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

MOSFET

Fig u re 3. Norma l ized O n Res i stan c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-R esistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Di ode

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDMC3612 N-Channel PowerTrench

0246810121416

ID = 3.3 A

VDD = 75 V

= 25 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJC

= 3.5 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.1 1 10 100 500

0.001

0.01

0.1

1 s

100 μs

10 ms

10 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

VGS = 10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

MOSFET

Capacitance vs Drain

to Source Voltage

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

Ma xim um Continuous Drain

Current vs Case Temperature

Figure 12.

Si ngle P ulse Maxi mum

Power Dissipation

www.fairchildsemi.com

Page 5

FDMC3612 N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

www.fairchildsemi.com

Page 6

Dimensional Outline and Pad Layout

FDMC3612 N-Channel PowerTrench

MOSFET

www.fairchildsemi.com

Page 7

TRADEMARKS

™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC3612 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICE S OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experie ncing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experie nce many problems such as loss o f bran d re putat ion, subst and ard performance, fa iled application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairch ild strongly en courage s customers to purchase Fair child parts eit her directly f rom Fa irchild or from Au thorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and e ncourage our cust omers to do their part in stopping this practice by buyin g direct or from authorize d distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com

Rev. I61