Datasheet FDMC15N06 Datasheet (Fairchild)

FDMC15N06

N-Channel MOSFET

55V, 15A, 0.090Ω

FDMC15N06 N-Channel MOSFET

July 2009

Features

•R

• 100% Avalanche Tested

• RoHS Compliant

= 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A

DS(on)

Top

Pin 1

Bottom

G

S

S

S

Description

These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.

5

D

D

6

D

D

D

D

D

7

8

D

4

3

2

1

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

V

I

I

E

I

E

P

T

T

DSS

GSS

D

DM

AS

AR

AR

D

J

L

, T

STG

Drain to Source Voltage 55 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 2) 60 A

Single Pulsed Avalanche Energy (Note 3) 36 mJ

Avalanche Current 15 A

Repetitive Avalanche Energy 3.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted

C

-Continuous (T

-Continuous (T

- Continuous (T

(T

= 25oC) 35 W

C

= 25oC) 2.3 W

(T

A

= 25oC) 15

C

= 100oC) 9

C

= 25oC) (Note 1a) 2.4 A

A

300

G

S

S

S

A

o

C

o

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2009 Fairchild Semiconductor Corporation
FDMC15N06 Rev. A

Thermal Resistance, Junction to Case 3.5

Thermal Resistance, Junction to Ambient (Note 1a) 53

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC15N06 FDMC15N06 Power 33 13" 12mm 3000 units

FDMC15N06 N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC55 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC-70-V/

D

V

= 50V, V

DS

= 45V, TC = 150oC - - 250

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.0-4.0V

Static Drain to Source On Resistance VGS = 10V, ID = 15A - 0.75 0.90 Ω

Forward Transconductance VDS = 20V, ID = 15A - 5 -S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 97 130 pF

Reverse Transfer Capacitance - 28 42 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 30V,ID = 15A

Gate to Source Gate Charge - 1.7 - nC

Gate to Drain “Miller” Charge - 3.6 - nC

DS

V

= 10V

GS

(Note 4)

- 265 350 pF

- 8.8 11.5 nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 36.5 83 ns

Turn-Off Delay Time - 22.5 55 ns

Turn-Off Fall Time - 22 54 ns

= 30V, ID = 15A

V

DD

= 25Ω

R

G

(Note 4)

-9.529ns

µA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:
1: R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2: Repetitive Rating: Pulse width limited by maximum junction temperature
3: L = 1mH, I

4: Essentially Independent of Operating Temperature Typical Characteristics

5: ISD ≤ 15A, di/dt ≤ 200A/µs, VDD ≤ 40V, Starting TJ = 25°C

FDMC15N06 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 15 A

Maximum Pulsed Drain to Source Diode Forward Current - - 60 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 35 - nC

a. 53 °C/W when mounted on

2

a 1 in

pad of 2 oz co pper

= 8.5A, RG = 25Ω, Starting TJ = 25°C

AS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 5)

F

= 15A - - 1.25 V

SD

= 15A

SD

2

-30-ns

is guaranteed by design while R

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

50

V
15 V
10 V
8 V
7 V
6 V
5 V

10

GS

= 20 V

50

10

FDMC15N06 N-Channel MOSFET

, Drain Current[A]

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

1

0.1 1 5

C

VDS, Drain-Source Voltage[V]

, Drain Current[A]

D

I

1

2345678

150oC

25oC

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.25

0.20

0.15

[Ω],

0.10

DS(ON)

R

0.05

Drain-Source On-Resistance

0.00
0 1020304050

ID, Drain Current [A]

VGS = 10V

*Note: TC = 25oC

VGS = 20V

100

150oC

25oC

10

, Reverse Drain Current [A]

S

I

1

0.0 0.5 1.0 1.5 2.0

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

800

600

400

Capacitances [pF]

200

0

0.1 1 10

FDMC15N06 Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

C

C

rss

oss

C

iss

rss

= C

gd

gd

VDS, Drain-Source Voltage [V]

*Note:

1. V

= 0V

GS

2. f = 1MHz

10

VDS = 11V
V

= 30V

DS

= 44V

V

8

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

024681012

*Note: ID = 15A

Qg, Total Gate Charge [nC]

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.2

2.5

FDMC15N06 N-Channel MOSFET

1.1

2.0

1.5

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 0V

GS

= 250µA

D

, [Normalized]

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

GS

= 15A

D

= 10V

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

100

10

1

Operation in This Area

, Drain Current [A]

is Limited by R

D

I

0.1

0.01

0.1 1 10 100

DS(on)

*Notes:

1. T

= 25oC

C

2. T

= 150oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

100ms

100s

1ms

10ms

1s

10s

DC

100µs

vs. Case Temperature

16

12

8

, Drain Current [A]

D

I

4

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

θJA

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

FDMC15N06 Rev. A

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

= 125 oC/W

θJA

0.001 0.01 0.1 1 10 100 1000

t, RECTANGULAR PULSE DURATION (sec )

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDMC15N06 N-Channel MOSFET

FDMC15N06 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

g

+

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

Driver

Driver

G

G

DUT

DUT

I

I

SD

SD

V

V

DD

DD

FDMC15N06 N-Channel MOSFET

V

V

GS

GS

( D riv e r )

( D riv e r )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

G ate P ulse W idth

G ate P ulse W idth

G ate P ulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, B ody Diode Forw ard Current

IFM, B ody Diode Forw ard Current

I

I

RM

RM

Body D iode Reverse Current

Body D iode Reverse Current

Body D iode R ecovery dv/dt

Body D iode R ecovery dv/dt

V

V

SD

SD

Body D iode

Body D iode

e D rop

Forward V olta

Forward V olta

e D rop

di/dt

di/dt

10V

10V

V

V

DD

DD

FDMC15N06 Rev. A

6

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Dimensional Outline and Pad Layout

FDMC15N06 N-Channel MOSFET

FDMC15N06 Rev. A

7

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Definition of Terms

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I41

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