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tm
FDMB668P
E
E
P-Channel 1.8V Logic Level PowerTrench® MOSFET
-20V, -6.1A, 35mΩ
Features
Max r
Max r
Max r
Excellent for portable application at V
Thin profile - Maximum height = 0.8mm
RoHS compliant
DS(on)
DS(on)
DS(on)
= 35mΩ at V
= 50mΩ at V
= 70mΩ at V
= -4.5V, ID = -6.1A
GS
= -2.5V, ID = -5.1A
GS
= -1.8V, ID = -4.3A
GS
GS
= -1.8V
General Description
FDMB668P is excellent for load switch and DC-DC conversion
among portable electronics. It achieves an optimal balance
among efficiency, thermal transfer and small form by integrating
a P-channel MOSFET with minimized on-state resistance into a
MicroFET 3x1.9 package. When optimizing the dimension of
portable applications, this little device offers a very efficient
solution.
Applications
Load Switch in:
-HDD
-Portable Gaming, MP3
-Notebook
DC/DC Conversion
FDMB668P P-Channel 1.8V Logic Level PowerTrench
February 2007
PIN 1
PIN 1
MicroFET 3X1.9
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous (Note 1a) -6.1
-Pulsed -40
Power Dissipation (Note 1a) 1.9
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C
GATE
GATE
SOURC
SOURC
= 25°C unless otherwise noted
A
1
1
D
D
D
D
2
2
D
D
3
3
G
G
4
4
8
8
D
D
D
D
7
7
D
D
6
6
S
S
5
5
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 65
Thermal Resistance, Junction to Ambient (Note 1b) 165
Package Marking and Ordering Information
®
MOSFET
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
668 FDMB668P MicroFET 3X1.9 7” 8mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDMB668P Rev.B
1
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FDMB668P P-Channel 1.8V Logic Level PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -16V, V
Gate to Source Leakage Current VGS = ±8V, V
ID = -250µA, referenced to 25°C -11.4 mV/°C
= 0V -1 µA
GS
= 0V ±100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -0.4 -0.6 -1.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = -4.5V, ID = -6.1A 27 S
ID = -250µA, referenced to 25°C 2.8 mV/°C
VGS = -4.5V, ID = -6.1A 22 35
VGS = -2.5V, ID = -5.1A 27 50
VGS = -1.8V, ID = -4.3A 35 70
VGS = -4.5V, ID = -6.1A,TJ = 125°C 31 50
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 210 280 pF
Reverse Transfer Capacitance 175 265 pF
VDS = -10V, VGS = 0V,
f = 1MHz
1565 2085 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 9 18 ns
Turn-Off Delay Time 176 282 ns
VDD = -10V, ID = -6.1A
VGS = -4.5V, R
GEN
= 6Ω
7 14 ns
Fall Time 84 135 ns
Total Gate Charge VGS = 0V to -10V
Total Gate Charge VGS = 0V to -5V 22 31 nC
Gate to Source Gate Charge 3 nC
VDD = -10V
ID = -6.1A
42 59 nC
Gate to Drain “Miller” Charge 5 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
FDMB668P Rev.B
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 15 23 nC
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
is determined by the user’s board design.
θJA
GS
IF = -6.1A, di/dt = 100A/µs
a) 65°C/W when mounted on a
2
pad of 2 oz copper
1in
= 0V, IS = -1.6A (Note 2) -0.7 -1.2 V
29 44 ns
b) 165°C/W when mounted on a
minimum pad .
2
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Page 3
FDMB668P P-Channel 1.8V Logic Level PowerTrench
Typical Characteristics T
40
32
24
16
, DRAIN CURRENT (A)
D
-I
8
0
012345
Figure 1.
1.6
ID = -6.1A
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-75 -50 -25 0 25 50 75 100 125 150
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
= -4.5V
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = -1.8V
VGS = -1.5V
3.0
NORMALIZED
2.5
2.0
1.5
1.0
0.5
DRAIN TO SOURCE ON-RESISTANCE
VGS = -1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0 8 16 24 32 40
-ID, DRAIN CURRENT(A)
VGS = -1.8V
VGS = -3.0V
VGS = -2.5V
VGS = -4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
50
45
(mΩ)
40
35
, DRAIN TO
30
DS(on)
r
25
SOURCE ON-RESISTANCE
20
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
ID =-6.1A
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
, DRAIN CURRENT (A)
D
-I
FDMB668P Rev.B
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
VDD = -5V
TJ = 150oC
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
Figure 5. Transfer Characteristics
100
V
= 0V
GS
10
1
TJ = 150oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDMB668P P-Channel 1.8V Logic Level PowerTrench
Typical Characteristics T
10
ID = -6.1A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
0 5 10 15 20 25 30 35 40 45
Figure 7.
20
r
DS(on)
10
1
0.1
, DRAIN CURRENT (A)
D
-I
0.01
0.01 0.1 1 10 100
Figure 9.
VDD = -5V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
LIMITED
SINGLE PULSE
= MAX RATED
T
J
o
R
TA = 25
-VDS, DRAIN to SOURCE VOLTAGE (V)
θJA
= 165
o
C/W
C
F or wa r d B ia s S af e
Operating Area
= 25°C unless otherwise noted
J
VDD = -10V
V
= -15V
DD
1ms
10ms
100ms
1s
10s
DC
5000
C
iss
1000
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
100
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
C a p a c i t a n c e v s D r a i n
to Source Voltage
90
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
60
CURRENT AS FOLLOWS:
I = I
25
30
), PEAK TRANSIENT POWER (W)
PK
0
P(
-3
-2
-1
10
10
Figure 10.
10
t, PULSE WIDTH (s)
S i ng l e P ul s e M a x i mu m
0
10
Power Dissipation
150 TA–
-----------------------
125
TA = 25oC
SINGLE PULSE
R
= 165oC/W
θJA
10110210
20
®
MOSFET
3
NORMALIZED THERMAL
FDMB668P Rev.B
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
θJA
0.05
0.02
0.01
0.1
IMPEDANCE, Z
0.01
-3
10
SINGLE PULSE
-2
10
Figure 11.
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Transient Thermal Response Curve
4
P
DM
NOTES:
DUTY FACTOR: D = t1/t
EAK TJ = PDM x Z
θJA
x R
10
t
1
t
2
2
+ T
θJA
A
2
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3
10
Page 5
FDMB668P P-Channel 1.8V Logic Level PowerTrench
®
MOSFET
FDMB668P Rev.B
5
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Page 6
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN
TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE
TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect
its safety or effectiveness.
®
UniFET™
VCX™
Wire™
FDMB668P P-Channel 1.8V Logic Level PowerTrench
®
MOSFET
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
FDMB668P Rev. B
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
6
Rev. I22
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