Datasheet FDMB3900AN Datasheet (Fairchild)

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Page 1

FDMB3900AN

MicroFET 3X1.9

Pin 1

D2 D2

Dual N-Channel Power Trench® MOSFET

25 V, 7.0 A, 23 mΩ

Features

 Max r  Max r  Fast switching speed  Low gate charge  High performance trench technology for extremely low r  High power and current handling capability  RoHS Compliant

= 23 mΩ at VGS = 10 V, ID = 7.0 A

DS(on)

= 33 mΩ at VGS = 4.5 V, ID = 5.5 A

DS(on)

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.

December 2011

process

FDMB3900AN Dual N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage ±20 V Drain Current -Continuous TA = 25 °C (Note 1a) 7.0

-Pulsed 28 Power Dissipation TA = 25 °C (Note 1a) 1.6 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.8

Thermal Characteristics

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 80 Thermal Resistance, Junction to Ambient (Note 1b) 165

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

3900 FDMB3900AN MicroFET 3X1.9 7 ’’ 8 mm 3000 units

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FDMB3900AN Dual N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 17 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 7.0 A 19 23

= 4.5 V, ID = 5.5 A 26 33

= 10 V, ID = 7.0 A

= 125 °C

26 32

Forward Transconductance VDS = 5 V, ID = 7.0 A 27 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 151 200 pF Reverse Transfer Capacitance 141 215 pF

= 13 V, VGS = 0 V

f = 1MHz

Gate Resistance 0.8 Ω

650 890 pF

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 15 26 ns Fall Time 310ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge V Gate to Source Charge 2.0 nC Gate to Drain “Miller” Charge 3.0 nC

= 13 V, ID = 7.0 A

= 10 V, R

= 0 V to 5 V 7 10 nC

GEN

Drain-Source Diode Characteristics

= 0 V, IS = 1.25 A (Note 2) 0.8 1.2

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 3 10 nC

a. 80 °C/W when mounted on a 1 in2 pad o f 2 oz c o pper

= 0 V, IS = 7.0 A (Note 2) 0.9 1.2

= 7.0 A, di/dt = 100 A/μs

= 6 Ω

= 7.0 A

= 13 V

612ns

11 17 nC

14 24 ns

is guaranteed by design wh ile R

θJC

b.165 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

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FDMB3900AN Dual N-Channel Power Trench

01234

VGS = 6 V

VGS = 3.5 V

VGS = 10 V

VGS = 4 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

VGS = 4.5 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 7 14 21 28

= 6 V

= 10 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT(A)

= 4 V

VGS = 4.5 V

VGS = 3.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 7 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NC E

, JUNCTION TEMPERATURE (

246810

ID = 7 A

TJ = 25 oC

TJ = 125 oC

, GATE TO SOURCE VO L TA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

12345

TJ = 25 oC

TJ = -55 oC

= 5 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

TJ = 150 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E V OLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

Norma l i z e d O n -Resis t a n c e

vs Drain Current and Gate Voltage

MOSFET

Figure 3. Normalized On- Resistance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resist ance v s Gate to

Source Voltage

Figure 6.

Source to D rain D iode

Forward Voltage vs Source Current

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FDMB3900AN Dual N-Channel Power Trench

036912

ID = 7 A

VDS = 10 V

= 13 V

, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDS = 15 V

0.1 1 10

100

200

300

400

500

600

700

800

900

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAG E (V)

rss

oss

iss

25 50 7 5 100 125 150

= 10 V

θJA

= 80 oC/W

= 4.5 V

, DRAIN CURRENT (A)

, AMBIENT TEMPERATURE (

0.01 0.1 1 10 100

0.01

0.1

100 μs

10 ms

10 s

100 ms

1 s

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 165

C/W

= 25

-4

-3

-2

-1

110

100 1000

0.5

100

300

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 165 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

Cap a c i tan c e v s Dr a i n

to Source Voltage

MOSFET

Figure 9.

Maximum Continuous Drain

Current vs Ambient Temperature

Figure 11. Single Pulse Maximum Power Dissipation

Figure 10.

Forward Bias Safe

Operating Area

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FDMB3900AN Dual N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 165 oC/W

DUTY CYCLE-DESCENDING O RD ER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE D U R ATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

MOSFET

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Page 6

Dimensional Outline and Pad Layout

FDMB3900AN Dual N-Channel Power Trench

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semi conductor and/or its glob al subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMB3900AN Dual N-Channel Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manu factures of semiconductor product s are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss o f bran d re putat ion, substand ard performa nce, failed application, and increased cost of production an d manufacturing delays. Fairchild is taking strong measur es to protect ourselves and our customers from the

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61

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