Datasheet FDMA910PZ Datasheet (Fairchild)

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Page 1

FDMA910PZ

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

Bottom Drain Contact

Single P-Channel PowerTrench® MOSFET

-20 V, -9.4 A, 20 mΩ

Features

 Max r  Max r  Max r  Low Profile - 0.8 mm maximum in the new package MicroFET

2x2 mm

 HBM ESD protection level > 2.8k V typical (Note 3)  Free from halogenated compounds and antimony oxides  RoHS Compliant

= 20 mΩ at VGS = -4.5 V, ID = -9.4 A

DS(on)

= 24 mΩ at VGS = -2.5 V, ID = -8.6 A

DS(on)

= 34 mΩ at VGS = -1.8 V, ID = -7.2 A

DS(on)

General Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

April 2012

FDMA910PZ Single P-Channel PowerTrench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

Thermal Characteristics

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

= 25 °C unless otherwise noted

Drain to Source Voltage -20 V Gate to Source Voltage ±8 V

-Continuous TA = 25°C (Note 1a) -9.4

-Pulsed -45 Power Dissipation TA = 25°C (Note 1a) 2.4 Power Dissipation T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 52 Thermal Resistance, Junction to Ambient (Note 1b) 145

910 FDMA910PZ MicroFET 2X2 7” 12mm 3000 units

= 25°C (Note 1b) 0.9

°C/W

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Page 2

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= -250 μA, referenced to 25 °C -12 mV/°C

= 0 V -1 μA

= 0 V ±1 μA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.5 -1.5 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 μA, referenced to 25 °C 3 mV/°C

= -4.5 V, ID = -9.4 A 16 20

= -2.5 V, ID = -8.6 A 19 24

= -1.8 V, ID = -7.2 A 24 34

= -4.5 V, ID = -9.4 A,

= 125 °C

20 25

Forward Transconductance VDD = -5 V, ID = -9.4 A 52 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 414 620 pF Reverse Transfer Capacitance 388 580 pF

= -10 V, VGS = 0 V,

f = 1 MHz

2110 2805 pF

mΩ

FDMA910PZ Single P-Channel PowerTrench

MOSFET

Switching Characteristics

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time Rise Time 19 34 ns Turn-Off Delay Time 135 216 ns Fall Time 103 165 ns Total Gate Charge Gate to Source Charge 2.5 nC Gate to Drain “Miller” Charge 6 nC

= -10 V, ID = -9.4 A,

= -4.5 V, R

= -4.5 V, VDD = -10 V,

= -9.4 A

GEN

Drain-Source Diode Characteristics

= 0 V, IS = -2 A (Note 2) -0.6 -1.2 V

NOTES:

1. R

is determined with the device mou nted o n a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 m ateri al. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 6.3 13 nC

a. 52 °C/W when mounted

on a 1 in

pad of 2 oz copper.

= 0 V, IS = -9.4 A (Note 2) -0.8 -1.2 V

= -9.4 A, di/dt = 100 A/μs

= 6 Ω

9.4 19 ns

21 29 nC

23 37 ns

is guaranteed by design while R

θJC

b. 145 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θJA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Page 3

FDMA910PZ Single P-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0

VGS = -1.5 V

VGS = -4.5 V

VGS = -2.5 V

VGS = -1.8 V

VGS = -3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-I

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0153045

VGS = -2.5 V

VGS = -1.8 V

VGS = -3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

, DRAIN CURRENT (A)

VGS = -4.5 V

VGS = -1.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

ID = -9.4 A V

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERA TUR E (

1.01.52.02.53.03.54.04.5

TJ = 125 oC

ID = -9.4 A

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0.5 1.0 1 .5 2.0

TJ = 25 oC

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norm a l i z e d O n-Resist a n c e

vs Drain Current and Gate Voltage

MOSFET

Fig u r e 3. N o r maliz e d On- Re s i stanc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

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FDMA910PZ Single P-Channel PowerTrench

0 5 10 15 20 25

0.0

1.5

3.0

4.5

ID = -9.4 A

VDD = -12 V

= -8 V

-V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -10 V

0.1 1 10 20

100

1000

5000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

03691215

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

= 0 V

TJ = 125 oC

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

-I

, GATE LEAKAGE CURRENT (A)

0.01 0.1 1 10 100

0.01

0.1

100

THIS A REA IS LIMITED BY

DS(on)

100 μs

1 ms

100 ms

1 s

10 s

10 ms

SINGLE PULSE T

= MAX RATED

θJA

= 145

C/W

TA = 25

-I

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

-4

-3

-2

-1

110

100 1000

0.5

100

1000

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 145 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Gat e Leaka g e Curre n t vs Ga t e to

Source Voltage

Figure 10.

Figure 11. Single Pulse Maximum Power Dissipa

Forward Bias Safe

Operating Area

tion

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Page 5

FDMA910PZ Single P-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 145 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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Page 6

B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER

A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION

ASME Y14.5M, 1994

0.10 CAB

0.05

RECOMMENDED LAND PATTERN OPT 1

0.10 C

0.08 C C

2.000

0.05

0.00

0.10 C

0.8 MAX

SEATING PLANE

0.10

(0.20)

0.33

0.20

PIN #1 IDENT

0.65

1.30

1.35

(0.47)

1.05

0.40 TYP0.65 TYP

0.25~0.35

1.000

0.800

2.30

1.00

MO-229 DATED AUG/2003

(0.56)

(0.30)

0.66

RECOMMENDED LAND PATTERN OPT 2

1.35

(0.47)

1.05

0.40 TYP

0.65 TYP

2.30

1.00

0.66

NO DRAIN OR GATE TRACES ALLOWED IN THIS AREA

PIN#1 LOCATION

1.05

0.95

D. DRAWING FILENAME: MKT-MLP06Lrev2.

Dimensional Outline and Pad Layout

FDMA910PZ Single P-Channel PowerTrench

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/or its global subsidiaries, and is n ot intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMA910PZ Single P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the bo dy or (b ) support or sustain life, and (c) whose failure to perform when properly used in accordan ce with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experi encing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit part s expe rience many problems such as loss of brand repu tatio n, substandar d pe rformance, f ail ed application, and increased cost of production and manufacturing delays. Fairchild is taki ng st ron g measures to prote ct ourselves and our custo mers from the proliferation of counterfeit parts. Fairchild strongl y encourages customers t o purchase Fairchil d parts either d irectly from Fairchild o r from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, me et Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor re serves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The data sh eet is for reference information only.

Rev. I61

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