Datasheet FDMA8884 Datasheet (Fairchild)

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Page 1

FDMA8884

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

Bottom Drain Contact

Single N-Channel Power Trench® MOSFET

30 V, 6.5 A, 23 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  Fast switching speed  RoHS Compliant

= 23 mΩ at VGS = 10 V, ID = 6.5 A

DS(on)

= 30 mΩ at VGS = 4.5 V, ID = 6.0 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for

Application

 Primary Switch

switching performance.

DS(on)

April 2012

process that has

FDMA8884 N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 3) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 8.0

-Pulsed 25 Power Dissipation (Note 1a) 1.9 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1a)

Thermal Characteristics

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Ambient (Note 1a) 65 Thermal Resistance, Junction to Ambient (Note 1b) 180

884 FDMA8884 MicroFET 2x2 7 ’’ 12 mm 3000 units

°C/W

A6.5 -Continuous T

Page 2

FDMA8884 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 250 μA, referenced to 25 °C 15 mV/°C

= 0 V 1 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA1.21.83.0V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 6.5 A 19 23

= 4.5 V, ID = 6.0 A 25 30

= 10 V, ID = 6.5 A, TJ = 125 °C 25 30

Forward Transconductance VDD = 5 V, ID = 6.5 A 26 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 132 175 pF Reverse Transfer Capacitance 18 28 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 1.1 Ω

339 450 pF

Switching Characteristics

d(on)

d(off)

Q Q

g(TOT)

gs gd

Turn-On Delay Time Rise Time 110ns Turn-Off Delay Time 11 20 ns

= 15 V, ID = 6.5 A,

= 10 V, R

GEN

= 6 Ω

510ns

Fall Time 110ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge V Total Gate Charge 1.0 nC

= 0 V to 4.5 V 2.7 3.7 nC

= 6.5 A

= 15 V

5.4 7.5 nC

Gate to Drain “Miller” Charge 0.9 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

1. R

θJA

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 4 10 nC

is determined by the user's board design.

θCA

a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper.

= 0 V, IS = 6.5 A (Note 2) 0.86 1.2 V

= 6.5 A, di/dt = 100 A/μs

b. 180 °C/W when mounted on a minimum pad of 2 oz copper.

16 28 ns

Page 3

FDMA8884 N-Channel Power Trench

0 0.4 0.8 1.2 1.6 2.0

VGS = 6 V

VGS = 4.5 V

, DRAIN TO SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

VGS = 4 V

VGS = 3.5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0 5 10 15 20 25

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS = 10 V

VGS = 3.5 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 6 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 6.5 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

, JUNCTION TEMPERATURE (

246810

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

= 25

ID = 6.5 A

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

VGS, GATE TO S O U RCE VOLTAGE (V)

12345

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.20.40.60.81.01.2

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

MOSFET

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

Fig ure 3. Norm a lize d On Re s ista n ce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

Page 4

FDMA8884 N-Channel Power Trench

0123456

ID = 6.5 A

VDD = 20 V

= 15 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 10 V

0.1 1 10 30

100

500

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10 100

0.01

0.1

100 μs

1 ms

1 s

10 ms

10 s

100 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 180

C/W

= 25

10-410-310-210-1110

100

0.5

100

200

SINGLE PULSE R

θJA

= 180

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

-4

-3

-2

-1

110

100 1000

0.005

0.01

0.1

SINGLE PULSE R

θJA

= 180 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Forward Bias Safe

Operating Area

Figure 11.

Figure 10.

Power Dissipation

Junction-to-Ambient Transient Thermal Response Curve

Figure 12.

Si ngle Puls e Ma ximu m

Page 5

Dimensional Outline and Pad Layout

B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER

A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION

ASME Y14.5M, 1994

0.10 CAB

0.05

RECOMMENDED LAND PATTERN OPT 1

0.10 C

0.08 C C

2.000

0.05

0.00

0.10 C

0.8 MAX

SEATING PLANE

0.10

(0.20)

0.33

0.20

PIN #1 IDENT

0.65

1.30

1.35

(0.47)

1.05

0.40 TYP0.65 TYP

0.25~0.35

1.000

0.800

2.30

1.00

MO-229 DATED AUG/2003

(0.56)

(0.30)

0.66

RECOMMENDED LAND PATTERN OPT 2

1.35

(0.47)

1.05

0.40 TYP

0.65 TYP

2.30

1.00

0.66

NO DRAIN OR GATE TRACES ALLOWED IN THIS AREA

PIN#1 LOCATION

1.05

0.95

D. DRAWING FILENAME: MKT-MLP06Lrev2.

FDMA8884 N-Channel Power Trench

MOSFET

Page 6

TRADEMARKS

™

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/ or its global subsidiaries, and is n ot intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMA8884 N-Channel Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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parts. Customers who inadvertently purchase counterfeit part s expe rience many problems such as loss of brand repu tation, substa ndar d pe rformance, fail ed application, and increased cost of production and manufacturing delays. Fairchild is taki ng st ron g measures to prote ct ourselves and our custo mers from the proliferation of counterfeit parts. Fairchild strongl y encourages customers t o purchase Fairchil d parts either d irectly from Fairchild o r from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fa irchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61