Page 1
FDMA8878
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D
D
D
D
S
G
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
Fast switching speed
RoHS Compliant
= 16 mΩ at VGS = 10 V, ID = 9.0 A
DS(on)
= 19 mΩ at VGS = 4.5 V, ID = 8.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
Application
DC/DC Buck Converters
Load Switch in NB
Notebook Battery Power Management
r
, switching performance.
DS(on)
May 2012
®
process that has
FDMA8878 Single N-Channel Power Trench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Characteristics
R
θJA
θJA
Package Marking and Ordering Information
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev.C
Device Marking Device Package Reel Size Tape Width Quantity
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 3) ±20 V
Drain Current -Continuous (Package Limited) TC = 25 °C 10
-Pulsed 40
Power Dissipation TA = 25 °C (Note 1a) 2.4
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145R
878 FDMA8878 MicroFET 2x2 7 ’’ 12 mm 3000 units
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 9.0
A
= 25 °C (Note 1b) 0.9
A
A -Continuous T
W
°C/W
1
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Page 2
FDMA8878 Single N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 26 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 1.8 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 9.0 A 13 16
GS
= 4.5 V, ID = 8.5 A 16 19
GS
= 10 V, ID = 9.0 A, TJ = 125 °C 17 21
V
GS
Forward Transconductance VDD = 5 V, ID = 9.0 A 41 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 172 230 pF
Reverse Transfer Capacitance 24 35 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.3 Ω
539 720 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 210ns
Turn-Off Delay Time 14 25 ns
= 15 V, ID = 9.0 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 210ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 1.6 nC
= 0 V to 4.5 V 4.1 5.8 nC
GS
V
DD
I
= 9.0 A
D
= 15 V
Gate to Drain “Miller” Charge 1.2 nC
612ns
8.5 12 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.0 A (Note 2) 0.75 1.2
V
SD
t
rr
Q
rr
NOTES:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
1. R
θJA
R
is guaranteed by design while R
θJC
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 4 10 nC
is determined by the user's board design.
θCA
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
SS
SF
DS
DF
G
GS
= 0 V, IS = 9.0 A (Note 2) 0.86 1.2
V
GS
= 9.0 A, di/dt = 100 A/μs
I
F
G
2
DF
DS
SF
16 28 ns
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
V
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Page 3
FDMA8878 Single N-Channel Power Trench
01234
0
8
16
24
32
40
VGS = 3.5 V
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 3 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 8 16 24 32 40
0
1
2
3
4
5
6
V
GS
= 4.5 V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 3 V
VGS = 4 V
VGS = 10 V
V
GS
= 3.5 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 9 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
10
20
30
40
50
60
TJ = 125 oC
ID = 9 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
TJ = 125 oC
V
DD
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTA GE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics
= 25°C unless otherwise noted
J
Figure 2.
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
®
MOSFET
Fig ure 3. Norm a lize d On Re s ista n ce
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Resista nce vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMA8878 Single N-Channel Power Trench
0246810
0
2
4
6
8
10
ID = 9 A
VDD = 20 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
0.1 1 10 30
10
100
1000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.1 1 10 80
0.01
0.1
1
10
50
10 ms
10 s
100 ms
DC
1 s
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 145
o
C/W
T
A
= 25
o
C
10
-3
10
-2
10
-1
10
0
10
1
100 1000
0.5
1
10
100
SINGLE PULSE
R
θJA
= 145
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
10
-3
10
-2
10
-1
10
0
10
1
100 1000
0.005
0.01
0.1
1
2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
= 145 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
P
DM
t
1
t
2
NOTES:
DUTY FACT OR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25°C unless otherwise noted
J
Capacitance vs Drain
to Source Voltage
®
MOSFET
Figure 9.
Forwar d B i a s S afe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
Figure 10.
Single Pulse Maximum
Power Dissipation
4
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Page 5
Dimensional Outline and Pad Layout
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
ASME Y14.5M, 1994
0.10 CAB
0.05
C
RECOMMENDED LAND PATTERN OPT 1
0.10 C
0.08 C
C
2.000
2.000
0.05
0.00
0.10 C
2X
2X
0.8 MAX
SEATING
PLANE
0.10
C
(0.20)
0.33
0.20
1
3
4
6
4
6
3
1
PIN #1 IDENT
0.65
1.30
1.35
(0.47)
1.05
0.40 TYP0.65 TYP
0.25~0.35
1.000
0.800
2.30
1.00
MO-229 DATED AUG/2003
(0.56)
(0.30)
0.66
RECOMMENDED LAND PATTERN OPT 2
46
31
1.35
(0.47)
1.05
0.40 TYP
0.65 TYP
2.30
1.00
0.66
NO DRAIN OR GATE
TRACES ALLOWED IN
THIS AREA
PIN#1 LOCATION
1.05
0.95
D. DRAWING FILENAME: MKT-MLP06Lrev2.
FDMA8878 Single N-Channel Power Trench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
5
www.fairchildsemi.com
Page 6
TRADEMARKS
®
™
tm
tm
The following includes registered and unregistered trademarks an d service marks, owned by Fairchild Se miconductor and/or its glo bal subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP™*
®
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CorePOWER™
CROSSVOLT™
CTL™
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DEUXPEED
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EfficentMax™
ESBC™
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Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
®
F-PFS™
®
FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®
®
®
®*
The Power Franchise
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®
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μSerDes™
®
UHC
Ultra FRFET™
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®
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMA8878 Single N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The data sheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FDMA8878 Rev. C
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