Datasheet FDMA7670 Datasheet (Fairchild)

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Page 1

FDMA7670

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

Bottom Drain Contact

Single N-Channel PowerTrench® MOSFET

30 V, 11 A, 15 mΩ Features

 Max r  Max r  Low Profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

 Free from halogenated compounds and antimony oxides  RoHS compliant

= 15 mΩ at VGS = 10 V, ID = 11 A

DS(on)

= 22 mΩ at VGS = 4.5 V, ID = 9 A

DS(on)

General Description

This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low r performance.

and gate charge provide excellent switching

DS(on)

Application

 DC – DC Buck Converters

FDMA7670 Single N-Channel Power Trench

January 2012

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

, T

STG

Thermal Characteristics

θJC θJA

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current -Continuous TA = 25 °C (Note 1a) 11

-Pulsed 24 Power Dissipation TA = 25 °C (Note 1a) 2.4 Power Dissipation T Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Resistance, Junction to Case 6.9 Thermal Resistance, Junction to Ambient (Note 1a) 52 Thermal Resistance, Junction to Ambient (Note 1b) 145

670 FDMA7670 MicroFET 2x2 7 ’’ 12 mm 3000 units

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.9

°C/WR

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Page 2

FDMA7670 Single N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current VGS = 20 V, V

= 250 μA, referenced to 25 °C 15 mV/°C

= 0 V 1 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C –6 mV/°C

= 10 V, ID = 11 A 10 15

= 4.5 V, ID = 9 A 14 22

= 10 V, ID = 11 A, TJ = 125 °C 14 21

Forward Transconductance VDS = 5 V, ID = 11 A 36 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 315 415 pF Reverse Transfer Capacitance 35 55 pF Gate Resistance 1.7 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 19 34 ns Fall Time 310ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 8 10 nC Gate to Source Gate Charge 3.0 nC Gate to Drain “Miller” Charge 2.2 nC

= 15 V, VGS = 0 V

f = 1.0 MHz

= 15 V, ID = 11 A

= 10 V, R

GEN

= 6 Ω

= 15 V,

= 11 A

1020 1360 pF

815ns

16 22 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current 2 A Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 6 12 nC

= 11 A, di/dt = 100 A/μs

a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper.

= 0 V, IS = 2 A (Note 2) 0.8 1.2 V

21 33 ns

is guaranteed by design while R

θJC

b. 145 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

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Page 3

FDMA7670 Single N-Channel Power Trench

0 0.5 1.0 1.5 2.0

VGS = 3.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 4 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 4 8 12162024

0.5

1.0

1.5

2.0

2.5

3.0

= 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 10 V

VGS = 6 V

VGS = 4 V

= 3.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 11 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERA TU R E (

246810

ID = 11 A

TJ = 25 oC

TJ = 125 oC

, GATE TO SOURCE VOLTA GE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics

= 25°C unless otherwise noted

Figure 2.

Nor ma lized On-Re s i sta n c e

vs Drain Current and Gate Voltage

MOSFET

Figure 3 . N o r m a lized On - R e s i s tance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resi stance vs Gate to

Source Voltage

Figure 6.

Source t o Drain Diode

Forward Voltage vs Source Current

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Page 4

FDMA7670 Single N-Channel Power Trench

0 5 10 15 20

Qg, GATE CHARGE (nC)

, GATE TO SOURCE VOLTAGE (V)

ID = 11 A

VDD = 20 V

= 10 V

VDD = 15 V

0.1 1 10 30

100

1000

3000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10 100

0.01

0.1

100

1 s

0.1 ms

10 ms

10 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS ARE A IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 145

C/W

= 25

10-410-310-210

-1

110

100 1000

0.1

100

1000

SINGLE PULSE R

θJA

= 145

C/W

= 25

VGS = 10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 145 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25°C unless otherwise noted

Figure 8.

Cap a cit a nce v s Dr a in

to Source Voltage

MOSFET

Figure 9.

For w ar d B ias S af e

Operating Area

Figure 11.

Transient Thermal Response Curve

Figure 10.

Single Pulse Maximum

Power Dissipation

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Page 5

Dimensional Outline and Pad Layout

B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER

A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION

ASME Y14.5M, 1994

0.10 CAB

0.05

RECOMMENDED LAND PATTERN OPT 1

0.10 C

0.08 C C

2.000

0.05

0.00

0.10 C

0.8 MAX

SEATING

PLANE

0.10

(0.20)

0.33

0.20

PIN #1 IDENT

0.65

1.30

1.35

(0.47)

1.05

0.40 TYP0.65 TYP

0.25~0.35

1.000

0.800

2.30

1.00

MO-229 DATED AUG/2003

(0.56)

(0.30)

0.66

RECOMMENDED LAND PATTERN OPT 2

1.35

(0.47)

1.05

0.40 TYP

0.65 TYP

2.30

1.00

0.66

NO DRAIN OR GATE TRACES ALLOWED IN THIS AREA

PIN#1 LOCATION

1.05

0.95

D. DRAWING FILENAME: MKT-MLP06Lrev2.

FDMA7670 Single N-Channel Power Trench

MOSFET

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Page 6

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™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor a nd/or its global subsid iaries, and is not intended to be an exhaustive list of all such trademarks.

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BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

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Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDMA7670 Single N-Channel Power Trench

MOSFET

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As used here in:

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61

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