Page 1
FDMA530PZ
Single P-Channel PowerTrench® MOSFET
–30V, –6.8A, 35mΩ
Features
Max r
Max r
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
HBM ESD protection level > 3k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
= 35mΩ at VGS = –10V, ID = –6.8A
DS(on)
= 65mΩ at VGS = –4.5V, ID = –5.0A
DS(on)
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
formance for its physical size and is well suited to linear mode
per
applications.
tm
June
FDMA530PZ Single P-Channel PowerTrench
2011
®
MOSFET
Pin 1
Drain
D
D
D
G
D
Bottom Drain Contact
1
Source
D
2
D
3
G
6
D
5
D
4
S
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage –30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Note 1a) –6.8
-Pulsed –24
Power Dissipation (Note 1a) 2.4
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range –55 to +150 °C
= 25°C unless otherwise noted
A
Thermal Characteristics
A
W
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
530 FDMA530PZ MicroFET 2X2 7’’ 8mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMA530PZ Rev.C1
°C/W
1
www.fairchildsemi.com
Page 2
FDMA530PZ Single P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = –250μA, VGS = 0V –30 V
Breakdown Voltage Temperature
Coefficient
I
= –250μA, referenced to 25°C –23 mV/°C
D
Zero Gate Voltage Drain Current VDS = –24V, VGS = 0V -1 μA
Gate to Source Leakage Current VGS = ±25V, V
= 0V ±10 μA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = –250μA –1 –2.1 –3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = –10V, ID = –6.8A 17 S
= –250μA, referenced to 25°C 5.4 mV/°C
I
D
V
= –10V, ID = –6.8A 30 35
GS
= –4.5V, ID = –5.0A 52 65
GS
= –10V, ID = –6.8A ,TJ = 125°C 43 63
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
Gate Resistance
Rg
Input Capacitance
Output Capacitance 155 210 pF
Reverse Transfer Capacitance 130 195 pF
V
= –15V, VGS = 0V,
DS
f = 1MHz
805 1070 pF
1 18 38
mΩV
®
MOSFET
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 21 34 ns
Turn-Off Delay Time 43 69 ns
VDD = –15V, ID = –6.8A
= –10V, R
V
GS
GEN
= 6Ω
Fall Time 31 50 ns
g
g
gs
gd
Total Gate Charge V
Total Gate Charge V
Gate to Source Gate Charge 3.1 nC
Gate to Drain “Miller” Charge 4.5 nC
= –10V
GS
= –5V 9 11 nC
GS
VDD = –15V
= –6.8A
I
D
6 12 ns
16 24 nC
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
Maximum Continuous Drain-Source Diode Forward Current –2 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 19 29 nC
a. 52°C/W when mounted on
2
pa d o f 2 oz co pp er
a 1 in
= 0V, IS = –2A –0.8 –1.2 V
GS
= –6.8A, di/dt = 100A/μs
I
F
b.145°C/W when mounted on a
minimum pad of 2 oz copper
24 36 ns
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA530PZ Rev.C1
2
www.fairchildsemi.com
Page 3
FDMA530PZ Single P-Channel PowerTrench
Typical Characteristics T
24
20
16
12
8
, DRAIN CURRENT (A)
D
4
-I
0
012345
Figure 1.
1.8
ID = -6.8A
V
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
VGS = - 5.0V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
= -10V
GS
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS =
VGS = - 4.5V
-10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = - 4.0V
VGS = -
3.5V
3.5
3.0
2.5
2.0
1.5
NORMALIZED
1.0
0.5
DRAIN TO SOURCE ON-RESISTANCE
04812162024
VGS = -3.5V
-ID, DRAIN CURRENT(A)
VGS = -4.0V
VGS = -4.5V
VGS = -5.0V
VGS = -10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
200
(mΩ)
150
100
, DRAIN TO
DS(on)
r
50
SOURCE ON-RESISTANCE
0
246810
Figure 4.
ID = -3.4A
-VGS, GATE TO SOURCE VOLTAGE (V)
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
T
C
= 25
J
Source Voltage
®
MOSFET
24
18
12
6
, DRAIN CURRENT (A)
D
-I
0
Figure 5. Transfer Characteristics
FDMA530PZ Rev.C1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VDD= -5V
TJ = 125oC
123456
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55oC
TJ = 25oC
3
30
V
= 0V
GS
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0.00.40.81.21.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
www.fairchildsemi.com
Page 4
FDMA530PZ Single P-Channel PowerTrench
Typical Characteristics T
10
ID = -6.8A
V
= -10V
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
0 3 6 9 12 15 18
Figure 7.
1E-3
V
= 0V
1E-4
GS
1E-5
1E-6
1E-7
1E-8
, GATE LEAKAGE CURRENT(A)
g
-I
1E-9
0 5 10 15 20 25 30 35
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 9.
v s G a te t o S o ur c e V ol ta g e
DD
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 125oC
G a t e L e a k a g e C u r r e n t
= 25°C unless otherwise noted
J
VDD = -15V
VDD = -20V
TJ = 25oC
2000
1000
CAPACITANCE (pF)
100
f = 1MHz
= 0V
V
GS
50
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
60
r
LIMIT
DS(on)
10
1
VGS= -4.5V
SINGLE PULSE
, DRAIN CURRENT (A)
0.1
D
R
145oC/W
-I
0.01
=
θJA
o
T
= 25
C
A
0.1 1 10 100
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10.
F o r w a r d B i a s S a f e
Operating Area
C
iss
C
oss
C
rss
20
®
MOSFET
100us
1ms
10ms
100ms
1s
10s
DC
150
120
90
60
30
), PEAK TRANSIENT POWER (W)
PK
0
P(
10-410-310-210-110010110210
Figure 11.
FDMA530PZ Rev.C1
SINGLE PULSE
R
= 145oC/W
θJA
T
=25oC
A
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
θJA
0.1
0.05
0.02
0.01
0.1
IMPEDANCE, Z
NORMALIZED THERMAL
3
0.01
-3
10
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
10
-1
P
DM
θJA
10010
x R
t
1
t
2
2
+ T
θJA
A
1
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
F i g u r e 1 2 . T r a n s i e n t T h e r m a l
Response Curve
4
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Page 5
Dimensional Outline and Pad Layout
FDMA530PZ Single P-Channel PowerTrench
®
MOSFET
FDMA530PZ Rev.C1
5
www.fairchildsemi.com
Page 6
tm
®
tm
tm
TRADEMARKS
The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
®
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
SM
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
®
®
™
®
®
®
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
®
®
*
FDMA530PZ Single P-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into t he body or (b ) support or sustain life,
and (c) whose failure to perform when properly used in acco rdance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All ma nufactures of semiconductor products are exper iencing counterfeiti ng of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplement ary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fai r child
Semiconductor. The datashe et is for reference information only.
Rev. I55
FDMA530PZ Rev.C1
6
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