Page 1
April 2009
FDMA520PZ Single P-Channel PowerTrench
FDMA520PZ
Single P-Channel PowerTrench® MOSFET
–20V, –7.3A, 30m:
Features
Max r
Max r
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
HBM ESD protection level > 3k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
= 30m: at VGS = –4.5V, ID = –7.3A
DS(on)
= 53m: at VGS = –2.5V, ID = –5.5A
DS(on)
Pin 1
D
Drain
G
D
Source
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
rmance for its physical size and is well suited to linear mo
perfo
applications.
D
D
Bottom Drain Contact
1
2
tm
de
®
MOSFET
6
D
5
D
3
G
D
S
D
4
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage –20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous (Note 1a) –7.3
-Pulsed –24
Power Dissipation (Note 1a) 2.4
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range –55 to +150 °C
= 25°C unless otherwise noted
A
Thermal Characteristics
R
TJA
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
520 FDMA520PZ MicroFET 2X2 7’’ 8mm 3000 units
A
W
°C/W
©2009 Fairchild Semiconductor Corporation
FDMA520PZ Rev.B2
1
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Page 2
FDMA520PZ Single P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V
Breakdown Voltage Temperature
Coefficient
I
= –250PA, referenced to 25°C –8.4 mV/°C
D
Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA
Gate to Source Leakage Current VGS = ±12V, V
= 0V ±10 PA
DS
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.6 –1.1 –1.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
= –250PA, referenced to 25°C 3.5 mV/°C
I
D
V
= –4.5V, ID = –7.3A 26 30
GS
= –2.5V, ID = –5.5A 42 53
GS
= –4.5V, ID = –7.3A ,TJ = 125°C 36 55
V
GS
Forward Transconductance VDS = –5V, ID = –7.3A 22 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 255 340 pF
Reverse Transfer Capacitance 225 340 pF
V
= –10V, VGS = 0V,
DS
f = 1MHz
1235 1645 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Turn-On Delay Time
Rise Time 29 47 ns
Turn-Off Delay Time 83 133 ns
VDD = –10V, ID = –7.3A
= –4.5V, R
V
GS
GEN
= 6:
Fall Time 74 119 ns
g
gs
gd
Total Gate Charge
Gate to Source Gate Charge 2.9 nC
Gate to Drain “Miller” Charge 4.4 nC
V
= –5V, ID = –7.3A
DD
= –4.5V
V
GS
10 20 ns
14 20 nC
m:V
®
MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
TJA
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA520PZ Rev.B2
Maximum Continuous Drain-Source Diode Forward Current –2 A
Source to Drain Diode Forward Voltage VGS= 0V, IS= –2A –0.8 –1.2 V
Reverse Recovery Time
Reverse Recovery Charge 22 33 nC
a. 52°C/W when mounted on
2
pad of 2 oz copper
a 1 in
=–7.3A, di/dt = 100A/Ps
I
F
2
b.145°C/W when mounted on a
minimum pad of 2 oz copper
30 45 ns
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Page 3
FDMA520PZ Single P-Channel PowerTrench
Typical Characteristics T
24
18
12
, DRAIN CURRENT (A)
6
D
-I
0
01234
Figure 1.
1.6
ID = -7.3A
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
0.6
-50 -25 0 25 50 75 100 125 150
DRAIN TO SOURCE ON-RESISTANCE
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = -4.5V
VGS = -4V
VGS = -3.5V
VGS = -3V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
= -4.5V
TJ, JUNCTION TEMPERATURE (oC)
= 25°C unless otherwise noted
J
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -2.5V
3.0
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
2.5
2.0
VGS = -2.5V
VGS = -3V
1.5
NORMALIZED
1.0
0.5
DRAIN TO SOURCE ON-RESISTANCE
0 6 12 18 24
VGS = -4V
-ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
60
50
(m:)
40
30
, DRAIN TO
DS(on)
r
20
ID= -3.6A
SOURCE ON-RESISTANCE
10
2345678
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
Source Voltage
VGS = -3.5V
VGS = -4.5V
®
MOSFET
24
18
12
6
, DRAIN CURRENT (A)
D
-I
0
Figure 5. Transfer Characteristics
FDMA520PZ Rev.B2
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VDD= -5V
TJ= 125oC
01234
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ= 25oC
TJ =-55oC
3
30
VGS= 0V
10
TJ= 125oC
1
0.1
TJ = 25oC
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
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Page 4
FDMA520PZ Single P-Channel PowerTrench
Typical Characteristics T
10
ID = -7.3A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
0 7 14 21 28 35
-Q
g
Figure 7.
Gate Charge Characteristics Figure 8.
1E-4
VGS= 0V
1E-5
TJ= 125oC
1E-6
1E-7
1E-8
, GATE LEAKAGE CURRENT(A)
g
-I
1E-9
03691215
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 9.
Gate Leakage Current vs Gate to
Source Voltage
VDD= -5V
, GATE CHARGE(nC)
TJ = 25oC
= 25°C unless otherwise noted
J
VDD = -10V
VDD = -15V
3000
1000
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
30
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
60
r
LIMIT
DS(on)
10
1
VGS=4.5V
SINGLE PULSE
0.1
, DRAIN CURRENT (A)
D
I
0.01
0.1 1 10
o
R
=145
C/W
TJA
o
T
= 25
C
A
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u r e 1 0 . Fo r wa rd Bi as Sa fe
Operating Area
C
iss
C
oss
C
rss
100us
1ms
10ms
100ms
1s
10s
DC
20
®
MOSFET
60
150
120
90
60
30
), PEAK TRANSIENT POWER (W)
PK
0
P(
10-410-310-210-110010110210
Figure 11.
FDMA520PZ Rev.B2
SINGLE PULSE
R
= 145oC/W
TJA
T
=25oC
A
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
TJA
0.05
0.02
0.01
0.1
IMPEDANCE, Z
NORMALIZED THERMAL
0.01
3
0.005
10-410-310-210-110010110210
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
P
DM
t
1
t
2
2
x R
+ T
TJA
TJA
A
3
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
4
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Page 5
Dimensional Outline and Pad Layout
FDMA520PZ Single P-Channel PowerTrench
®
MOSFET
FDMA520PZ Rev.B2
5
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Page 6
TRADEMARKS
t
®
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
™*
m
®
®
®
®
*
®
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
PDP SPM™
Power-SPM™
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
®
t
®
®
PSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMA520PZ Single P-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMA520PZ Rev. B2
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I40
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