Datasheet FDMA510PZ Datasheet (Fairchild)

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April 2009

FDMA510PZ Single P-Channel PowerTrench

FDMA510PZ

Single P-Channel PowerTrench® MOSFET

–20V, –7.8A, 30m:

Features

 Max r

 Low profile - 0.8mm maximum - in the new package MicroFET

2X2 mm

 HBM ESD protection level > 3KV typical (Note 3)

 Free from halogenated compounds and antimony oxides

 RoHS Compliant

= 30m: at VGS = –4.5V, ID = –7.8A

DS(on)

= 37m: at VGS = –2.5V, ID = –6.6A

DS(on)

= 50m: at VGS = –1.8V, ID = –5.5A

DS(on)

= 90m: at VGS = –1.5V, ID = –2.0A

DS(on)

Pin 1

Drain

Source

General Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.

The MicroFET 2X2 package offers exceptional thermal

rmance for

perfo applications.

its physical size and is well suited to linear mode

Bottom Drain Contact

MOSFET

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) –7.8

-Pulsed –24

Power Dissipation (Note 1a) 2.4

Power Dissipation (Note 1b) 0.9

Operating and Storage Junction Temperature Range –55 to +150 °C

= 25°C unless otherwise noted

Thermal Characteristics

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 52

Thermal Resistance, Junction to Ambient (Note 1b) 145

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

510 FDMA510PZ MicroFET 2X2 7’’ 8mm 3000units

°C/W

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FDMA510PZ Single P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

Breakdown Voltage Temperature Coefficient

= –250PA, referenced to 25°C –13 mV/°C

Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA

Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 PA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.4 –0.7 –1.5 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= –250PA, referenced to 25°C 3 mV/°C

= –4.5V, ID = –7.8A 27 30

= –2.5V, ID = –6.6A 34 37

= –1.8V, ID = –5.5A 46 50

= –1.5V, ID = –2.0A 60 90

= –4.5V, ID = –7.8A ,TJ = 125°C 36 40

Forward Transconductance VDD = –5V, ID = –7.8A 26 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 205 275 pF

Reverse Transfer Capacitance 185 280 pF

= –10V, VGS = 0V,

f = 1MHz

1110 1480 pF

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 918ns

Turn-Off Delay Time 125 200 ns

VDD = –10V, ID = –7.8A

= –4.5V, R

GEN

= 6:

Fall Time 64 103 ns

Total Gate Charge

Gate to Source Charge 2.1 nC

Gate to Drain “Miller” Charge 4.2 nC

= –5V, ID = –7.8A

= –4.5V

Drain-Source Diode Characteristics

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1. 5 x 1.5 in. board of FR-4 m aterial. R

TJA

the user's board design.

Maximum Continuous Drain-Source Diode Forward Current –2 A

Source to Drain Diode Forward Voltage VGS= 0V, IS= –2A –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 44 71 nC

a. 52°C/W when mounted on a 1 in2pad of 2 oz copper.

= –7.8A, di/dt = 100A/Ps

714ns

19 27 nC

66 106 ns

is guaranteed by design while R

TJC

b. 145°C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

0PZ Rev.B2

FDMA51

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FDMA510PZ Single P-Channel PowerTrench

Typical Characteristics T

VGS = -4.5V

, DRAIN CURRENT (A)

-I

01234

-V

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

1.6

ID = -7.8A V

= -4.5V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = -2.5V

VGS = -2V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

VGS = -1.8V

VGS = -1.5V

2.5

=-1.5V

VGS = -1.8V

2.0

VGS = -2V

= -2.5V

NORMALIZED

1.5

1.0

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

DRAIN TO SOURCE ON-RESISTANCE

0.5 04812162024

-I

, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

200

(m:)

150

100

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

-V

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

ID= -7.8A

TJ= 125oC

TJ= 25oC

, GATE TO SOURCE VOLTAGE (V)

Source Voltage

=-4.5V

MOSFET

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= -5V

, DRAIN CURRENT (A)

-I

0.0 0.5 1.0 1.5 2.0 2.5

TJ = -55oC

TJ = 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

0PZ Rev.B2

FDMA51

TJ= 150oC

= 0V

TJ= 150oC

0.1

TJ = 25oC

0.01

, REVERSE DRAIN CURRENT (A)

-I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

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Page 4

FDMA510PZ Single P-Channel PowerTrench

Typical Characteristics T

4.5

ID= -7.8A

3.0

1.5

, GATE TO SOURCE VOLTAGE(V)

-V

0.0 0 5 10 15 20

Figure 7.

-1

-2

VDS= 0V

-3

-4

-5

-6

-7

-8

-9

, GATE LEAKAGE CURRENT(A)

-I

-10

03691215

Figure 9.

= -3V

VDD = -7V

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

TJ= 125oC

TJ= 25oC

-V

GATE TO SOURCE VOLTAGE (V)

Gate Leakage Current vs Gate to

Source Voltage

= 25°C unless otherwise noted

VDD = -5V

3000

1000

CAPACITANCE (pF)

f = 1MHz

= 0V

100

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

THIS AREA IS LIMITED BY r

SINGLE PULSE

0.1

, DRAIN CURRENT (A)

-I

TJA

0.01

0.1 1 10

DS(on)

= MAX RATED

= 145oC/W

= 25oC

-VDS, DRAIN to SOURCE VOLTAGE (V)

Fi gu re 10 . F or wa rd Bi as S af e

Operating Area

iss

oss

rss

100us

1ms

10ms

100ms

10s

MOSFET

400

100

, PEAK TRANSIENT POWER (W)

(PK)

0.5

-4

-3

0PZ Rev.B2

FDMA51

-2

-1

t, PULSE WIDTH (s)

Figure 11. Single Pulse Maximum Power Dissipation

SINGLE PULSE R

= 145oC/W

TJA

= 25oC

VGS = -4.5V

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Page 5

FDMA510PZ Single P-Channel PowerTrench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 145oC/W

TJA

-4

-3

NORMALIZED THERMAL

TJA

IMPEDANCE,

1E-3

0.01

= 25°C unless otherwise noted

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

t, RECTANGULAR PULSE DURATION (s)

-1

Figure 12. Transient Thermal Response Curve

x R

+ T

TJA

MOSFET

0PZ Rev.B2

FDMA51

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Page 6

Dimensional Outline and Pad Layout

FDMA510PZ Single P-Channel PowerTrench

MOSFET

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Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

™*

F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

PSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDMA510PZ Single P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I40