Page 1
August 2009
FDMA430NZ Single N-Channel 2.5V Specified PowerTrench
FDMA430NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
30V, 5.0A, 40m:
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the R
leadframe.
(on) @VGS=2.5V on special MicroFET
DS
Applications
Li-lon Battery Pack
Pin 1
Drain
D
G
D
Source
Features
R
R
Low Profile-0.8mm maximum-in the new package
Free from halogenated compounds and antimony oxides
= 40m: @ V
DS(on)
= 50m:@ V
DS(on)
MicroFET 2x2 mm
HBM ESD protection level > 2.5k V typical (Note 3)
RoHS Compliant
= 4.5 V, ID = 5.0A
GS
= 2.5 V, ID = 4.5A
GS
S
5
D
tm
G
34
D
2
®
MOSFET
6
D
D
S
D
Bottom Drain Contact
1
MicroFET 2X2 (Bottom View)
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
, T
T
J
STG
Drain-Source Voltage 30 V
Gate-Source Voltage r12 V
Drain Current -Continuous (Note 1a)
-Pulsed
Power dissipation (Steady State) (Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
= 25°C unless otherwise noted
A
5.0
20
2.4
0.9
Thermal Characteristics
R
TJA
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 52
Thermal Resistance, Junction-to-Ambient (Note 1b) 145
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
430 FDMA430NZ 7” 12mm 3000 units
D
o
C/W
A
W
o
C
©2009 Fairchild Semiconductor Corporation
FDMA430NZ Rev B4
1
www.fairchildsemi.com
Page 2
FDMA430NZ Single N-Channel 2.5V specified PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
'B
VDSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 30 V
Breakdown Voltage Temperature
Coefficient
ID = 250PA,
Referenced to 25°C
25.2 mV/°C
Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V, 1 PA
Gate-Body Leakage, VGS = r12V, VDS = 0V r10 PA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250PA 0.6 0.81 1.5 V
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
Forward Transconductance VDS = 5V, ID =5.0A 25.6 S
ID = 250PA,
Referenced to 25°C
V
= 4.5V, ID = 5.0A 23.6 40
GS
= 4.0V, ID = 5.0A 23.9 41
V
GS
= 3.1V, ID =4.5A 25.4 43
V
GS
= 2.5V, ID =4.5A 27.6 50
V
GS
= 4.5V, ID =5.0 A,
V
GS
=150°C
T
J
-3.2 mV/°C
37.0 61
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 110 150 pF
V
= 10V, VGS =0V,
DS
f = 1.0MHz
600 800 pF
Reverse Transfer Capacitance 75 115 pF
Gate Resistance f = 1.0MHz 3.5 :
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time 7.1 15 ns
Turn-Off Delay Time 18.1 37 ns
= 10V, ID = 1A
V
DD
= 4.5V, R
V
GS
GEN
= 6:
8.3 17 ns
Turn-Off Fall Time 6.0 12 ns
Total Gate Charge
Gate-Source Charge 0.8 2 nC
Gate-Drain Charge 1.9 3 nC
= 10V, ID = 5.0A,
V
DS
= 4.5V
V
GS
7.3 11 nC
m:
®
MOSFET
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
TJA
mounting surface of the drain pins.
lse T
2. Pu
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
FDMA430NZ Rev B4 www.fairchildsemi.com2
Maximum Continuous Drain-Source Diode Forward Current 2.0 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A 0.69 1.2 V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge 5 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
a. 52 °C/W when mounted
est: Pulse Width < 300 Ps, Duty Cycle < 2.0%
on a 1 in
2
= 5.0A,
I
F
di/dt = 100A/Ps
pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
17 ns
Page 3
FDMA430NZ Single N-Channel 2.5V specified PowerTrench
Typical Characteristics T
40
VGS = 4.5V
30
VGS = 3.0V
20
10
, DRAIN CURRENT(A)
D
I
0
01234
VDS, DRAIN TO SOURCE VOLTAGE(V)
Figure 1.
On Region Characteristics Figure 2.
1.6
ID = 5.0A
V
GS
= 4.5V
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-80 -40 0 40 80 120 160
TJ,JUNCTION TEMPERATURE(OC)
PULSE DURATION=300PS
DUTY CYCLE=2.0% MAX
= 25°C unless otherwise noted
J
VGS = 2.5V
VGS = 2.0V
VGS = 1.5V
1.8
1.7
1.6
1.5
1.4
1.3
1.2
VGS= 2.0V
2.5V
3.0V
3.5V
1.1
ON-RESISTANCE
1.0
0.9
0.8
NORMOLIZED DRAIN to SOURCE
5 10152025303540
ID, DRAIN CURRENT(A)
On-Resistance vs Drain Current and
Gate Voltage
0.08
0.07
0.06
0.05
0.04
, DRAIN TO SOURCE
0.03
DS(on)
ON-RESISTANCE (OHM)
R
0.02
TJ = 25oC
12345
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0% MAX
I
= 2.5A
D
TJ = 125oC
4.5V
®
MOSFET
Figure 3. Normalized
On Resistance vs Junction
Temperature
30
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0% MAX
25
V
= 5V
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
0.5 1.0 1.5 2.0 2.5
FDMA430NZ Rev B4 www.fairchildsemi.com3
DS
o
T
= 125
C
J
T
= -55
J
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics Figure 6.
o
T
= 25
C
J
o
C
Figure 4.
On-Resistance vs Gate to Source
Votlage
100
V
= 0V
GS
10
1
T
J
= 125
o
C
o
T
= 25
J
0.1
0.01
, REVERSE CURRENT(A)
S
1E-3
I
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
= -55
J
VSD, BODY DIODE FORWAD VOLTAGE(V)
Source to Drain Diode Forward
Voltage vs Source Current
C
o
C
Page 4
FDMA430NZ Single N-Channel 2.5V specified PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
5
ID =5.0A
4
VDS = 20V
o
C
VDS = 15V
3
VDS = 10V
2
1
,GATE-SOURCE VOLTAGE(V)
GS
V
0
0246810
Figure 7.
100
10
1
OPERATION IN THIS
AREA MAY BE
, DRAIN CURRENT (A)
LIMITED BY R
0.1
D
I
0.01
0.1 1 10
Qg,GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
DS(ON)
SINGLE PULSE
=MAX RATED
T
J
TA=25
VDS, DRAIN TO SOURCE VOLTAGE (V)
10us
100us
1ms
10ms
100ms
1s
10s
DC
1000
C
iss
C
oss
100
C
rss
CAPACITANCE(PF)
f = 1MHZ
V
= 0V
10
0.1 1 10
VDS,DRAIN TO SOURCE VOLTAGE(V)
GS
30
Capacitance vs Drain to Source Voltage
5
4
3
2
, DRAIN CUREENT(A)
D
1
I
R
=145OC/W
TJA
50
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE(OC)
VGS=4.5V
VGS=2.5V
®
MOSFET
Figure 9.
Safe Operating Area Figure 10. Maximum Continuous Drain Current vs
200
100
VGS = 10V
10
SINGLE PULSE
, PEAK TRANSIENT POWER (W)
1
(PK)
P
0.5
-4
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
Figure 11. Single Pulse Maximum Power Dissipation
FDMA430NZ Rev B4 www.fairchildsemi.com4
Ambient Temperature
TA = 25oC
FOR TEMPERATURES
o
ABOVE 25
CURRENT AS FOLLOWS:
0
10
1
10
C DERATE PEAK
II25=
2
10
150 TA–
---------------------
125
3
10
Page 5
FDMA430NZ Single N-Channel 2.5V specified PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
TJA
0.1
Impedance, Z
Normalized Thermal
0.01
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
-3
10
Figure 12.
= 25°C unless otherwise noted
J
-2
10
-1
10
10
t, RECTANGULAR PULSE DURATION(s)
Transient Thermal Response Curve
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
R
= 145oC
TJA
0
1
10
2
2
x R
+ T
TJA
TJA
A
2
10
3
10
®
MOSFET
FDMA430NZ Rev B4 www.fairchildsemi.com5
Page 6
Dimensional Outline and Pad Layout
FDMA430NZ Single N-Channel 2.5V specified PowerTrench
®
MOSFET
FDMA430NZ Rev B4
www.fairchildsemi.com6
Page 7
TRADEMARKS
®
t
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™*
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
tm
®
®
®
®
*
®
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
m
PDP SPM™
Power-SPM™
PowerTrench
®
®
SM
®
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
t
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMA430NZ Single N-Channel 2.5V specified PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
FDMA430NZ Rev. B4 7 www.fairchildsemi.com
Loading...