Datasheet FDMA420NZ Datasheet (Fairchild)

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Page 1

August 2009

FDMA420NZ Single N-Channel 2.5V Specified PowerTrench

FDMA420NZ

Single N-Channel 2.5V Specified PowerTrench® MOSFET

20V, 5.7A, 30m:

General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the R MicroFET leadframe.

(on) @VGS=2.5V on special

Applications

 Li-lon Battery Pack

Pin 1

Drain

Source

Features

 R

 Low Profile-0.8mm maximum-in the new package



 Free from halogenated compounds and antimony oxides

 RoHS Compliant

= 30m: @ V

DS(on)

= 40m:@ V

DS(on)

MicroFET 2x2 mm

HBM ESD protection level > 2.5k V typical (Note 3)

= 4.5 V, ID = 5.7A

= 2.5 V, ID = 5.0A

MOSFET

Bottom Drain Contact

MicroFET Bottom View 2X2

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

, T

STG

Drain-Source Voltage 20 V

Gate-Source Voltage r12 V

Drain Current -Continuous (Note 1a)

-Pulsed

Power dissipation (Steady State) (Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

5.7

2.4

0.9

Thermal Characteristics

TJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 52

Thermal Resistance, Junction-to-Ambient (Note 1b) 145

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

420 FDMA420NZ 7” 12mm 3000 units

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C/W

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FDMA420NZ Single N-Channel 2.5V specified PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

VDSS

DSS

GSS

On Characteristics

GS(th)

DS(ON)

Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 20 V

Breakdown Voltage Temperature Coefficient

ID = 250PA, Referenced to 25°C

12 mV/°C

Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, 1 PA

Gate-Body Leakage VGS = r12V, VDS = 0V r10 PA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250PA 0.6 0.83 1.5 V

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

Forward Transconductance VDS = 5V, ID = 5.7A 28.3 S

ID = 250PA, Referenced to 25°C

= 4.5V, ID = 5.7A 16.8 30

= 4.0V, ID = 5.7A 17.3 31

= 3.1V, ID = 5.0A 18.9 33

= 2.5V, ID = 5.0A 21.2 40

= 4.5V, ID = 5 .7A ,

=150°C

-3.1 mV/°C

24.8 44

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 163 220 pF

Reverse Transfer Capacitance 125 190 pF

= 10V, VGS = 0V,

f = 1.0MHz

701 935 pF

Gate Resistance f = 1.0MHz 1.92 :

Switching Characteristics (Note 2)

d(on)

d(off)

Turn-On Delay Time

Turn-On Rise Time 8.6 18 ns

Turn-Off Delay Time 21.5 43 ns

= 10V, ID = 1A

= 4.5V, R

GEN

= 6:

9.8 20 ns

Turn-Off Fall Time 8.6 18 ns

Total Gate Charge

Gate-Source Charge 0.9 2 nC

Gate-Drain Charge 2.4 4 nC

= 10V, ID = 5.7A,

= 4.5V

8.8 12 nC

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

TJA

drain pins.

2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%.

3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.

FDMA420NZ Rev B4

Maximum Continuous Drain-Source Diode Forward Current 2.0 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A 0.69 1.2 V

Diode Reverse Recovery Time

Diode Reverse Recovery Charge 5 nC

a. 52 °C/W when mounted

on a 1 in

= 5.7A,

di/dt = 100A/Ps

pad of 2 oz copper.

b. 145 °C/W when mounted on a minimum pad of 2 oz copper.

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20 ns

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FDMA420NZ Single N-Channel 2.5V specified PowerTrench

Typical Characteristics T

, DRAIN CURRENT (A)

01234

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1.

1.6

ID = 5.7A V

1.4

1.2

= 4.5V

PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX

VGS = 4.5V

VGS = 3.5V

= 3.0V

VGS = 1.5V

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

VGS = 2.5V

VGS = 2.0V

NORMALIZED

2.1

PULSE DURATION = 300PS DUTY CYCLE = 2.0%MAX

1.8

1.5

VGS = 2.0V

VGS = 2.5V

VGS = 3.5V

1.2

0.9

DRAIN TO SOURCE ON-RESISTANCE

10 20 30 40 50

ID, DRAIN CURRENT(A)

On-Resistance vs Drain Current and

Gate Voltage

(m:)

PULSE DURATION = 300PS DUTY CYCLE = 2.0%MAX

ID = 2.8A

VGS = 3.0V

VGS = 4.5V

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-80 -40 0 40 80 120 160

Figure 3.

, DRAIN CURRENT (A)

0.5 1.0 1.5 2.0 2.5

TJ, JUNCTION TEMPERATURE (oC)

Normalized On Resistance vs Junction

Temperature

PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX

VDS = 5V

TJ = 125

TJ = 25

TJ = -55

VGS, GATE TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE

ON-RESISTANCE

DS(ON)

12345

Figure 4.

TJ = 25oC

, GATE TO SOURCE VOLTAGE (V)

On-Resistance vs Gate to Source

TJ = 125oC

Votlage

100

VGS = 0V

0.1

0.01

1E-3

, REVERSE DRAIN CURRENT (A)

1E-4

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 125

TJ = 25

TJ = -55

MOSFET

Figure 5.

FDMA420NZ Rev B4

Transfer Characteristics Figure 6.

Source to Drain Diode Forward Voltage

vs Source Current

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Typical Characteristics T

= 25°C unless otherwise noted

FDMA420NZ Single N-Channel 2.5V specified PowerTrench

VDS = 15V

VDS = 20V

VDS = 25V

, GATE TO SOURCE VOLTAGE(V)

024681012

Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteri

stics Figure 8. Capacitance vs

100

10us

OPERATION IN THIS AREA MAY BE

, DRAIN CURRENT (A)

LIMITED BY R

0.1

0.01

0.1 1 10

DS(ON)

SINGLE PULSE

=MAX RATED

TA=25

100us

1ms

10ms

100ms

1s 10s

VDS, DRAIN TO SOURCE VOLTAGE (V)

2000

1000

f = 1MHz V

= 0V

CAPACITANCE (pF)

100

0.1 1 10

iss

oss

rss

VDS, DRAIN TO SOURCE VOLTAGE (V)

Drain to Source Voltage

, DRAIN CURRENT (A)

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE(oC)

VGS = 4.5V

VGS = 2.5V

MOSFET

Figure 9. Forward Bias

200

100

, PEAK TRANSIENT POWER (W)

(PK)

0.5

-4

FDMA420NZ Rev B4

-3

Safe Operating Area Figure 10. Maximum Continuous Drain Current vs

Ambient Temperature

VGS = 10V

SINGLE PULSE

Figure 11.

-2

t, PULSE WIDTH (s)

-1

Single Pulse Maximum Power Dissipation

TA = 25oC

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

II25=

150 TA–

---------------------

125

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Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

TJA

0.1

Impedance, Z

Normalized Thermal

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

-3

Figure 12.

= 25°C unless otherwise noted

-2

-1

t, RECTANGULAR PULSE DURATION(s)

Transient Thermal Response Curve

FDMA420NZ Single N-Channel 2.5V specified PowerTrench

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z R

= 145oC

TJA

x R

+ T

TJA

MOSFET

FDMA420NZ Rev B4

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Page 6

Dimensional Outline and Pad Layout

FDMA420NZ Single N-Channel 2.5V specified PowerTrench

MOSFET

FDMA420NZ Rev B4

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

® ®

FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMA420NZ Single N-Channel 2.5V specified PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMA420NZ Rev B4

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I41