Datasheet FDMA3028N Datasheet (Fairchild)

FDMA3028N

G2

S1

G1

D2

D1

S2

S1 G1 D2

S2

MicroFET 2x2

D1 G2

PIN 1

D1 D2

1

2

3

6

5

4

Top Bottom

Dual N-Channel PowerTrench® MOSFET

30 V, 3.8 A, 68 mΩ
Features

 Max r
 Max r
 Max r
 Low profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

 RoHS Compliant

= 68 mΩ at VGS = 4.5 V, ID = 3.8 A

DS(on)

= 88 mΩ at VGS = 2.5 V, ID = 3.4 A

DS(on)

= 123 mΩ at VGS = 1.8 V, ID = 2.9 A

DS(on)

General Description

This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The MicroFET 2x2 package offers
exceptional thermal performance for its physical size and is well
suited to linear mode applications.

FDMA3028N Dual N-Channel PowerTrench

June 2011

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2

Drain to Source Voltage 30 V
Gate to Source Voltage ±12 V
Drain Current -Continuous (Note 1a) 3.8

-Pulsed 16
Power Dissipation (Note 1a) 1.5
Power Dissipation (Note 1b) 0.7
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86
Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151
Thermal Resistance for Single Operation, Junction to Ambient (Note 1e) 160
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1f) 133

328 FDMA3028N MicroFET 2X2 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

www.fairchildsemi.com

FDMA3028N Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = ±12 V, V

I

= 250 μA, referenced to 25 °C 23 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.6 0.9 1.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -3 mV/°C

D

= 4.5 V, ID = 3.8 A 46 68

V

GS

V

= 2.5 V, ID = 3.4 A 56 88

GS

= 1.8 V, ID = 2.9 A 80 123

V

GS

= 4.5 V, ID = 3.8 A, TJ = 125 °C 72 108

V

GS

Forward Transconductance VDS = 5 V, ID = 3.8 A 15 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 40 55 pF
Reverse Transfer Capacitance 29 45 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 2.4 Ω

282 375 pF

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 15 27 ns
Fall Time 2.5 10 ns
Total Gate Charge
Gate to Source Charge 0.4 nC
Gate to Drain “Miller” Charge 1 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 3.3 10 nC

5.3 11 ns

= 15 V, ID = 3.8 A,

V

DD

V

= 4.5 V, R

GS

= 15 V, ID = 3.8 A

V

DD

V

= 5 V

GS

= 0 V, IS = 1.3 A (Note 2) 0.7 1.2 V

GS

= 3.8 A, di/dt = 100 A/μs

I

F

GEN

= 6 Ω

3.7 5.2 nC

12 22 ns

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2

2

www.fairchildsemi.com

FDMA3028N Dual N-Channel PowerTrench

Electrical Characteristics T

Notes:

1. R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

user's board design.
(a) R

(b) R
(c) R

(d) R
(e) R
(f) R

= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

θJA

= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.

θJA

= 69 oC/W when mounted on a 1 in

θJA

= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

θJA

= 160 oC/W when mounted on a 30mm2 pad of 2 oz copper. For single operation.

θJA

= 133 oC/W when mounted on a 30mm2 pad of 2 oz copper. For dual operation.

θJA

= 25 °C unless otherwise noted

J

2

pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.

a. 86 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 69 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 173 °C/W when mounted on
a minimum pad of 2 oz copper

d. 151 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by the

θJA

®

MOSFET

e. 160 °C/W when mounted on
30mm

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%

2

pad of 2 oz copper

f. 133 °C/W when mounted on
30mm2 of 2 oz copper

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2

3

www.fairchildsemi.com

FDMA3028N Dual N-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0

0

4

8

12

16

VGS = 3.5 V

VGS = 1.8 V

VGS = 4.5 V

VGS =2.5 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = 3 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0481216

0.5

1.0

1.5

2.0

2.5

V

GS

= 4.5 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT(A)

V

GS

= 3 V

VGS = 2.5 V

VGS = 1.8 V

V

GS

= 3.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 3.8 A
V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

TJ = 125 oC

ID = 3.8 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA GE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0123

0

4

8

12

16

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics

= 25°C unless otherwise noted

J

Figure 2.

Normal i z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

Fig ure 3. Norma lized On Res istan ce

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

4

www.fairchildsemi.com

FDMA3028N Dual N-Channel PowerTrench

01234

0

1

2

3

4

5

ID = 3.8 A

VDD = 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10 30

10

100

500

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL T AGE (V)

C

rss

C

oss

C

iss

0.1 1 10 100

0.01

0.1

1

10

20

100 μs

10 ms

10 s

100 ms

DC

1 s

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VO LTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 173

o

C/W

T

A

= 25

o

C

10-410-310-210

-1

110

100 1000

0.5

1

10

100

SINGLE PULSE
R

θJA

= 173

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.005

0.01

0.1

1

2

D = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

R

θJA

= 173 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PU L SE DURATION (sec)

P

DM

t

1

t

2

NOTES:
DUTY FACT OR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Forwar d B i a s S afe

Operating Area

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2

Figure 11. Junction-to-Ambient Transient Thermal Response Curve

Figure 10.

Single Pulse Maximum

Power Dissipation

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMA3028N Dual N-Channel PowerTrench

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2

6

www.fairchildsemi.com

TRADEMARKS

tm

®

tm

tm

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.

AccuPower™
Auto-SPM™
AX-CAP™*

®

BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter

®

®

®

®
®

®

*

®

FPS™
F-PFS™

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

PDP SPM™

Power-SPM™
PowerTrench
PowerXS™

SM

Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*

®

®

™

®

®

®

The Power Franchise
The Right Technology for Your Success™

TinyBoost™
TinyBuck™
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TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™

®

TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

®

®

®

*

FDMA3028N Dual N-Channel PowerTrench

®

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specificatio ns for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.

Rev. I54

©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FDMA3028N Rev.C2