Datasheet FDMA3027PZ Datasheet (Fairchild)

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FDMA3027PZ

S1 G1 D2

MicroFET 2x2

D1 G2

PIN 1

D1 D2

Top Bottom

Dual P-Channel PowerTrench® MOSFET

-30 V, -3.3 A, 87 mΩ Features

 Max r  Max r  HBM ESD protection level > 2 KV typical (Note 3)  Low profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

 RoHS Compliant

= 87 mΩ at VGS = -10 V, ID = -3.3 A

DS(on)

= 152 mΩ at VGS = -4.5 V, ID = -2.3 A

DS(on)

General Description

This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.

Applications

 Load Switch  Discrete Gate Driver

FDMA3027PZ Dual P-Channel PowerTrench

June 2012

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage -30 V Gate to Source Voltage ±25 V Drain Current -Continuous (Note 1a) -3.3

-Pulsed -15 Power Dissipation (Note 1a) 1.4 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 Thermal Resistance for Single Operation, Junction to Ambient (Note 1e) 160 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1f) 133

327 FDMA3027PZ MicroFET 2X2 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

°C/W

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FDMA3027PZ Dual P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -24 V, V Gate to Source Leakage Current VGS = ±25 V, V

= -250 μA, referenced to 25 °C -22 mV/°C

= 0 V -1 μA

= 0 V ±10 μA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1-1.9-3V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 μA, referenced to 25 °C 5 mV/°C

= -10 V, ID = -3.3 A 69 87

= -4.5 V, ID = -2.3 A 108 152

= -10 V, ID = -3.3 A, TJ = 125 °C 97 122

Forward Transconductance VDS = -5 V, ID = -3.3 A 6 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 59 80 pF Reverse Transfer Capacitance 53 80 pF

= -15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 12 Ω

324 435 pF

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 17 31 ns

= -15 V, ID = -3.3 A,

= -10 V, R

GEN

= 6 Ω

Fall Time 11 25 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 1.0 nC

= 0 V to -10 V

= 0 V to -5 V 4.1 6 nC

= -15 V,

= -3.3 A

Gate to Drain “Miller” Charge 1.9 nC

5.2 11 ns

7.2 10 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 10 18 nC

= 0 V, IS = -3.3 A (Note 2) -0.94 -1.3 V

= -3.3 A, di/dt = 100 A/μs

20 32 ns

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FDMA3027PZ Dual P-Channel PowerTrench

Electrical Characteristics T

Notes:

1. R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

user's board design. (a) R

(b) R (c) R

(d) R (e) R (f) R

= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

θJA

= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.

θJA

= 69 oC/W when mounted on a 1 in

θJA

= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

θJA

= 160 oC/W when mounted on a 30 mm2 pad of 2 oz copper. For single operation.

θJA

= 133 oC/W when mounted on a 30 mm2 pad of 2 oz copper. For dual operation.

θJA

a. 86 °C/W when mounted on a 1 in

c. 69 °C/W when mounted on a 1 in

= 25 °C unless otherwise noted

pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 173 °C/W when mounted on a minimum pad of 2 oz copper

d. 151 °C/W when mounted on a minimum pad of 2 oz copper

is determined by the

θJA

MOSFET

e. 160 °C/W when mounted on 30 mm2 pad of 2 oz copper

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%

3. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

FDMA3027PZ Rev.C

f. 133 °C/W when mounted on 30 mm2 pad of 2 oz copper

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FDMA3027PZ Dual P-Channel PowerTrench

012345

VGS = -5 V

VGS = -3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = -4 V

VGS = -4.5 V

VGS = -10 V

-I

, DRAIN CURRENT (A)

-V

, DRAIN TO SOURCE VOLTAGE (V)

03691215

= -4 V

VGS = -3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

, DRAIN CURRENT (A)

= -5 V

VGS = -4.5 V

= -10 V

-75 - 50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = -3.3 A V

= -10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TE M P E R ATURE (

246810

100

200

300

400

TJ = 125 oC

ID = -3.3 A

TJ = 25 oC

-V

, GATE TO SOURCE VOL TA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

123456

TJ = 150 oC

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Normal i z e d O n - R esistance

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMA3027PZ Dual P-Channel PowerTrench

02468

ID = -3.3 A

VDD = -10 V

= -15 V

-V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -20 V

0.1 1 10 30

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0 4 8 121620242832

-9

-8

-7

-6

-5

-4

-3

-2

-1

= 0 V

TJ = 25 oC

TJ = 125 oC

-V

GATE TO SOURCE VOLTAGE (V)

-I

, GATE LEAKAGE CURRENT (A)

0.1 1 10 100

0.01

0.1

10 s

10 ms

1 s

100 ms

1 ms

-I

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 173

C/W

= 25

-3

-2

-1

110

100 1000

0.5

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 173 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Gate Leakage Current vs Gate to

Source Voltage

Figure 11.

Figure 10.

Forward Bias Safe

Operating Area

Single Pulse Maximum Power Dissipation

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FDMA3027PZ Dual P-Channel PowerTrench

-3

-2

-1

110

100 1000

0.02

0.1

SINGLE PULSE R

θJA

= 173 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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Page 7

Dimensional Outline and Pad Layout

FDMA3027PZ Dual P-Channel PowerTrench

MOSFET

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Page 8

TRADEMARKS

™

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/ or its global subsidiaries, and is n ot intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMA3027PZ Dual P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the bo dy or (b ) support or su stain life, and (c) whose failure to perform when properly used in accordan ce with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are exper iencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit part s expe rience many problems such as loss of brand repu tation, substa ndar d pe rformance, fail ed application, and increased cost of production and manufacturing delays. Fairchild is taki ng st ron g measures to prote ct ourselves and our custo mers from the proliferation of counterfeit parts. Fairchild strongl y encourages customers t o purchase Fairchil d parts either d irectly from Fairchild o r from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access t o Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

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committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61

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