Page 1
FDMA2002NZ Dual N-Channel PowerTrench
FDMA2002NZ
Dual N-Channel PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1 D2
D1 D2
MicroFET 2x2
D1 G2 S2
May 200
tm
t
tm
tm
Features
x 2.9 A, 30 V R
R
R
x Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x HBM ESD protection level = 1.8kV (Note 3)
x RoHS Compliant
Free from halogenated compounds and antimony
oxides
S1
G1
D2
= 123 m: @ VGS = 4.5 V
DS(ON)
= 140 m: @ VGS = 3.0 V
DS(ON)
= 163 m: @ VGS = 2.5 V
DS(ON)
1
2
3
D1
6
5
G2
4
S2
MOSFET
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage
I
D
D
TJ, T
Drain Current – Continuous (TC = 25°C, VGS = 4.5V) 2.9
– Continuous (TC = 25°C, VGS = 2.5V) 2.7
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 1.5 P
Power Dissipation for Single Operation
Operating and Storage Temperature –55 to +150
STG
(Note 1b) 0.65
r12
Thermal Characteristics
R
TJA
R
TJA
R
TJA
R
TJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a) 83 (Single Operation)
(Note 1b) 193 (Single Operation)
(Note 1c) 68 (Dual Operation)
(Note 1d) 145 (Dual Operation)
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
002 FDMA2002NZ 7’’ 8mm 3000 units
20 Fairchild Semiconductor Corpora tion
FDMA2002NZ Rev B (W)
V
A
W
qC
qC/W
Page 2
FDMA2002NZ Dual N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BVDSS
'T
J
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage Current VGS = ± 12 V, VDS = 0 V ±10
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 PA
V
GS
I
= 250 PA, Referenced to 25°C
D
30 V
25 mV/°C
PA
PA
On Characteristics
V
Gate Threshold Voltage
GS(th)
'VGS(th)
'T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 PA
V
DS
= 250 PA, Referenced to 25°C
I
D
VGS = 4.5V, ID = 2.9A 75 123
VGS = 3.0V, ID = 2.7A 84 140
VGS = 2.5V, ID = 2.5A 92 163
VGS = 4.5V, ID = 2.9A, TC = 85°C 95 166
VGS = 3.0V, ID = 2.7A, TC = 150°C 138 203
= 2.5V, ID = 2.5A, TC = 150°C 150 268
V
GS
0.4 1.0 1.5 V
–3
mV/qC
m:
Dynamic Characteristics
C
Input Capacitance 190 220 pF
iss
C
Output Capacitance 30 40 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 15 V, V
DS
f = 1.0 MHz
GS
= 0 V,
20 30 pF
Switching Characteristics (Note 2)
= 15 V, ID = 1 A,
t
Turn–On Delay Time 6 12 ns
d(on)
t
r
t
Turn–Off Delay Time 12 21 ns
d(off)
Turn–On Rise Time 8 16 ns
tf Turn–Off Fall Time
Qg Total Gate Charge 2.4 3.0 nC
Qgs Gate–Source Charge 0.35 nC
Qgd Gate–Drain Charge
V
DD
= 4.5 V, R
V
GS
= 15 V, ID = 2.9 A,
V
DS
V
= 4.5 V
GS
GEN
= 6 :
2 10 ns
0.75 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Source–Drain Diode Forward Current 2.9 A
V
SD
trr Diode Reverse Recovery Time 10 ns
Qrr Diode Reverse Recovery Charge
Source–Drain Diode Forward
Voltage
IS = 2.0 A 0.9 1.2
I
= 1.1 A 0.8 1.2
S
= 2.9 A,
I
F
dI
/dt = 100 A/μs
F
2 nC
V
MOSFET
FDMA2002NZ Rev B (W)
Page 3
Notes:
1. R
is determined with the device m ounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
user's board design.
(a) R
(b) R
(c) R
(d) R
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
TJA
= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
TJA
= 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
TJA
= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
TJA
o
C/W when
a)86 oC/W when
mounted on a 1
2
in
pad of 2 oz
copper.
b)173
mounted on a
minimum pad of 2
oz copper.
is guaranteed by design while R
TJC
o
c)69
C/W when
mounted on a 1 in
pad of 2 oz copper.
FDMA2002NZ Dual N-Channel PowerTrench
is determined by the
TJA
o
C/W when
d)151
2
mounted on a
minimum pad of 2 oz
copper.
MOSFET
FDMA2002NZ Rev B (W)
Page 4
Typical Characteristics
FDMA2002NZ Dual N-Channel PowerTrench
10
VGS = 4.5V
8
3.5V 2.9V
6
4
, DRAIN CURRENT (A)
D
I
2
0
00.511.522.53
V
2.5V
2.7V
, DRAIN-SOURCE VOLTAGE (V)
DS
2.0V
1.5V
1.8
VGS = 2.0V
1.6
1.4
, NORMALIZED
DS(ON)
R
2.5V
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0246810
2.7V
2.9V
, DRAIN CURRENT (A)
I
D
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 2.9A
V
= 4.5V
GS
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.24
0.2
0.16
0.12
, ON-RESISTANCE (OHM)
0.08
DS(ON)
TA = 25oC
R
0.04
0246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
4.0V
4.5V
ID = 1.45A
MOSFET
Figure 3. On-Resistance Variation with
Temperature.
10
VDS = 5V
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
0.511.522.53
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
125oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
TA= 125oC
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
25oC
-55oC
-V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA2002NZ Rev B (W)
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Dimensional Outline and Pad Layout
FDMA2002NZ Dual N-Channel PowerTrench
MOSFET
FDMA2002NZ Rev B (W)
Page 6
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMA2002NZ Dual N-Channel PowerTrench
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b ) support or su stain li fe,
and (c) whose failure to perform when properly used in acco rdance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manuf actures of semiconductor products are experien cing counterfeiting of th eir
parts. Customers who inadvertently purchase counterfei t par ts e xperi en ce many prob lems such a s loss of b rand rep utati on, subst anda rd p erf ormance , fa iled
application, and increased cost of product i on and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from t he
proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairch ild parts either direct ly from Fairchild or from Authorized Fai rchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
committed to combat this global problem and encourage o ur customers to do their p art in stopping this pract ice by buying direct or from authorized dist ributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fai rchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDMA2002NZ Rev B (W)
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