Datasheet FDM3622 Datasheet (Fairchild)

tm

FDM3622 N-Channel PowerTrench® MOSFET

100V, 4.4A, 60mΩ Features

 Max r  Max r  Low Miller Charge  Low QRR Body Diode  Optimized efficiency at high frequencies  UIS Capability (Single Pulse and Repetitive Pulse)  RoHS Compliant

= 60mΩ at VGS = 10V, ID = 4.4A

DS(on)

= 80mΩ at VGS = 6.0V, ID = 3.8A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Application

 Distributed Power Architectures and VRMs.  Primary Switch for 24V and 48V Systems

 High Voltage Synchronous Rectifier  Formerly developmental type 82744

January 2007

®

process that has

FDM3622 N-Channel PowerTrench

®

MOSFET

Bottom

8

7

6

5

1

2

3

4

D

Top

D

5

D

6

D

7

G

S

D

8

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 4.4

-Pulsed 20 Power Dissipation (Note 1a) 2.1 Power Dissipation (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

Thermal Characteristics

G

4

S

3

S

2

S

1

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 3.0 Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDM3622 FDM3622 Power 33 7’’ 8mm 3000 units

°C/W

1

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FDM3622 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 V Zero Gate Voltage Drain Current Gate to Source Leakage Current VGS = ±20V, V

VDS = 80V, VGS = 0V 1

TJ = 100°C 250

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 4 V

VGS = 10V, ID = 4.4A 44 60

Static Drain to Source On Resistance

VGS = 10V, ID = 4.4A , TJ = 150°C 92 120

Dynamic Characteristics

C

iss

C

oss

C

rss

Rg Gate Resistance VDS = 15mV, f = 1MHz 3.1 Ω

Input Capacitance Output Capacitance 125 170 pF Reverse Transfer Capacitance 35 55 pF

VDS = 25V, VGS = 0V, f = 1MHz

820 1090 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q

Q

g gs

gd

Turn-On Delay Time Rise Time 25 40 ns Turn-Off Delay Time 35 56 ns

VDD = 50V, ID = 4.4A VGS = 10V, R

GEN

= 24Ω

11 20 ns

Fall Time 26 42 ns Total Gate Charge V Gate to Source Gate Charge 3.6 nC

Gate to Drain “Miller” Charge 3.4 nC

= 10V

GS

VDD = 50V ID = 4.4A

13 17 nC

μA

mΩVGS = 6.0V, ID = 3.8A 56 80

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

user's board design.

(a)R

θJA

(b)R

θJA

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

FDM3622 Rev.B

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 108 nC

is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

= 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. = 135°C/W when mounted on a minimum pad of 2 oz copper.

V V

IF = 4.4A, di/dt = 100A/μs

a. 60°C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0V, IS = 4.4A 1.25 V

GS

= 0V, IS = 2.2A 1.0 V

GS

56 ns

is guaranteed by design while R

θJC

b. 135°C/W when mounted on a minimum pad of 2 oz copper

2

is determined by the

θJA

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FDM3622 N-Channel PowerTrench

Typical Characteristics T

10

VGS = 10V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 1.

80

70

60

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

50

DS(ON)

r

VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

ID = 4.4A

ID = 0.2A

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

TA = 25oC

= 25°C unless otherwise noted

J

VGS = 5V

VGS = 4.7V

VGS = 4.5V

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

2.5

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 4.4A

Normali z e d O n - R esistance

vs Junction Temperature

10

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

8

, DRAIN CURRENT (A)

D

I

6

4

2

TJ = 150oC

TJ = 25oC

TJ = -55oC

®

MOSFET

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

FDM3622 Rev.B

40

468

, GATE TO SOURCE VOLTAGE (V)

V

GS

10

Figure 3. On-Re sistance vs G ate to

Source Voltage

VDD = 50V

WAVEFORMS IN DESCENDING ORDER:

ID = 4.4A ID = 1A

03691215

Figure 5.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 6. Capacitance vs Drain

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0

1200

1000

100

C, CAPACITANCE (pF)

10

0.1 1 10 100

3

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. Transfer Characteristics

C

= CGS + C

ISS

C

≅ C

+ C

OSS

DS

GD

C

= C

RSS

GD

V

= 0V, f = 1MHz

GS

VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

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GD

FDM3622 N-Channel PowerTrench

Typical Characteristics T

100

r

LIMITED

DS(on)

10

1

, DRAIN CURRENT (A)

0.1

D

I

SINGLE PULSE

= MAX RA TED

T

J

o

= 135

C/W

R

θJA

T

= 25oC

A

0.01

0.1 1 10 100

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 7.

Fo rward Bias Safe

Operating Area

1.2

1.0

0.8

0.6

= 25°C unless otherwise noted

J

100us

1ms

10ms 100ms

1s

DC

400

20

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

10

t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10 100

STARTING TJ = 150oC

Figure 8.

tAV, TIME IN AVALANCHE (ms)

Uncalam ped Induc tive

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

Switching Capability

6

V

= 10V

GS

4

®

MOSFET

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 150

TA, AMBIENT TEMPERATURE (oC)

125

Figure 9. Norma lized Po wer dissipation

vs Ambient Temperature

1.2

VGS = VDS, ID = 250μA

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

Figure 11.

Nor m aliz e d Gate Thres h old v o ltage

vs Junction Temperature

2

, DRAIN CURRENT (A)

D

I

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

Figu r e 10. Max i m um Con t i n uous Dr a i n Curre n t

vs Ambient Temperature

1.2

ID = 250μA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160

T

, JUNCTION TEMPERATURE (oC)

J

Figure 12. Normalized Dr ai n to Source Breakdown

Voltage vs Junction Temperature

FDM3622 Rev.B

4

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FDM3622 N-Channel PowerTrench

Typical Characteristics T

500

100

10

), PEAK TRANSIENT POWER (W)

PK

1

P(

-4

10

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

θJA

0.05

0.1

0.02

0.01

IMPEDANCE, Z

NORMALIZED THERMAL

-3

10

SINGLE PULSE R

= 135oC/W

θJA

= 25°C unless otherwise noted

J

SINGLE PULSE R

= 135oC/W

θJA

-2

10

t, PULSE WID T H (s)

-1

10

Figure 13. Peak Current Capability

VGS = 10V

TA = 25oC

FOR TEMPERATURES

o

ABOVE 25 CURRENT AS FOLLOWS:

0

10

1

10

I = I

25

C DERATE PEAK

150 T

–

A

----------------------- -

125

2

10

3

10

®

MOSFET

P

DM

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

θJA

t

1

+ T

t

2

A

FDM3622 Rev.B

1E-3

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

t, RECTANGULAR PULSE DURATION(s)

Figure 14.

Transient Thermal Response Curve

5

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FDM3622 N-Channel PowerTrench

®

MOSFET

FDM3622 Rev.B

6

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

UniFET™ VCX™ Wire™

FDM3622 N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

FDM3622 Rev. B

Rev. I22

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