Datasheet FDJ129P Datasheet (Fairchild)

November 2007

FDJ129P

P-Channel -2.5 Vgs Specified PowerTrench MOSFET

FDJ129P

tm

General Description

This P-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

G

S

S

S

SC75-6 FLMP

S

S

Features

• –4.2 A, –20 V. R

R

• Low gate charge

• High performance trench technology for extremely

DS(ON)

low R

• Compact industry standard SC75-6 surface mount

package

• RoHS Compliant

4

5

6

= 70 mΩ @ VGS = –4.5 V

DS(ON)

= 120 mΩ @ VGS = –2.5 V

DS(ON)

Bottom Drain

3

2

1

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –4.2 A

– Pulsed –16

PD Power Dissipation for Single Operation (Note 1a) 1.6 W

TJ, T

Operating and Storage Junction Temperature Range

STG

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 77

± 12

–55 to +150

V

°C

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.A FDJ129P 7’’ 8mm 3000 units

2007 Fairchild Semiconductor Corpora tion

FDJ129P Rev G (W)

FDJ129P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

I

= –250 µA,Referenced to 25°C

D

–20 V

–18

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –8 A

D(on)

V

= VGS, ID = –250 µA

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –4.5 V, ID = –4.2 A
V

= –2.5 V, ID = –3.3 A

GS

V

= –4.5 V, ID = –4.2,TJ=125°C

GS

–0.6 –1.1 –1.5 V

3

54

91
72

70
120
100

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –4.2 A 11 S

Dynamic Characteristics

C

Input Capacitance 585 780 pF

iss

C

Output Capacitance 124 170 pF

oss

C

Reverse Transfer Capacitance

rss

V

= –10 V, V

DS

f = 1.0 MHz

= 0 V,

GS

61 95 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 10 20 ns

d(on)

tr Turn–On Rise Time 9 18 ns

t

Turn–Off Delay Time 17 30 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 4 6 nC

Qgs Gate–Source Charge 1.1 nC

Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –10 V, ID = –4.2 A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

10 20 ns

1.2 nC

Drain–Source Diode Characteristics and Maximum Ratings

VSD Drain–Source Diode Forwar Voltage VGS = 0 V, IS = –1.5 A (Note 2) –0.7 –1.2 V

trr Diode Reverse Recovery Time 16 nS

Qrr Diode Reverse Recovery Charge

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) 77°C/W when mounted

on a 1in2 pad of 2 oz
copper.

I

= –4.2 A,

F

d

= 100 A/µs

iF/dt

13 nC

b) 110°C/W when mounted

on a minimum pad of 2 oz
copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDJ129P Rev G (W)

Typical Characteristics

FDJ129P

16

VGS=-4.5V

12

8

, DRAIN CURRENT (A)

D

4

-I

0

01234

-3.5V

, DRAIN TO SOURCE VOLT AGE (V)

-V

DS

-3.0V

-2.5V

-2.0V

1.8

VGS=-2.5V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 4 8 12 16

-3.0V

-3.5V

-I

, DRAIN CURRENT (A)

D

-4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -4.2A

1.3
= -4.5V

V

GS

1.2

1.1

1

, NORMALIZED

DS(ON)

0.9

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.22

0.18

0.14

TA = 125oC

0.1

, ON-RESISTANCE (OHM)

0.06

DS(ON)

R

0.02
12345

TA = 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

ID = -2.1A

Figure 3. On-Resistance Variation

withTemperature.

12

VDS = -5V

9

6

, DRAIN CURRENT (A)

3

D

-I

0

0.5 1 1.5 2 2.5 3

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

125oC

25oC

Figure 4. On-Resistance Variation with

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

with Source Current and Temperature.

Gate-to-Source Voltage.

TA = 125oC

25oC

-55oC

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

FDJ129P Rev G (W)

Typical Characteristics

FDJ129P

5

ID = -4.2A

4

3

2

, GATE-SOURCE VOLTAGE (V)

1

GS

-V

0

012345

, GATE CHARGE (nC)

Q

g

VDS = -5V

-10V

-15V

800

C

600

400

C

CAPACITANCE (pF)

200

0

0 5 10 15 20

OSS

C

RSS

-V

DS

ISS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = -4.5V

, DRAIN CURRENT (A)

0.1

D

SINGLE PULSE

-I

R

= 110oC/W

θJA

T

= 25oC

0.01

A

0.1 1 10 100

-V

DC

, DRAIN-SOURCE VOLTAGE (V)

DS

10s

100ms

1s

10ms

1ms

100µs

10

SINGLE PULSE

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

R

f = 1 MHz
V

= 110°C/W

θJA

T

= 25°C

A

GS

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.

0.1

0.1

0.0
5

0.0

0.01

r(t), NORMALIZED EFFECTIVE

0.01

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE

, TIME (sec)

t

1

R

(t) = r(t) * R

JA

θ

R

JA

θ

P(pk)

- TA = P * R

T

J

Duty Cycle, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

= 110oC/W

t

1

t

2

θ

JA

θ

(t)

JA

/ t

1

2

FDJ129P Rev G (W)

Dimensional Outline and Pad Layout

FDJ129P

FDJ129P Rev G (W)

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.

2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

ACEx

®

Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK

®

Fairchild

®

Fairchild Semiconductor

®

FACT Quiet Series™
FACT

®

FAST

®

FastvCore™
FPS™
FRFET

®

Global Power Resource

SM

Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC

®

OPTOPLANAR

®

®

PDP-SPM™
Power220

®

Power247

®

POWEREDGE

®

Power-SPM™
PowerTrench

®

Programmable Active Droop™
QFET

®

QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM

®

STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6

SuperSOT™-8
SyncFET™
The Power Franchise

®

TinyBoost™
TinyBuck™
TinyLogic

®

TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC

®

UniFET™
VCX™

®

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.

Preliminary First Production

This datasheet contains preliminary data; supplementary data will be pub­lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

Obsolete Not In Production

This datasheet contains specifications on a product that has been discontin­ued by Fairchild Semiconductor. The datasheet is printed for reference infor­mation only.

Rev. I31