Datasheet fdi8441 Datasheet

tm

FDI8441

N-Channel PowerTrench® MOSFET

40V, 80A, 2.7mΩ

FDI8441 N-Channel PowerTrench

July 2007

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse and Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

= 2.2mΩ at VGS = 10V, ID = 80A

DS(on)

= 215nC at V

g(10)

GS

= 10V

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Steering

 Integrated Starter / Alternator

 Distributed Power Architectures and VRMs

 Primary Switch for 12V Systems

®

MOSFET

©2007 Fairchild Semiconductor Corporation
FDI8441 Rev.A

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current Continuous (TC < 160oC, V

= 25oC, V

amb

= 10V, with R

GS

= 10V) 80

GS

= 43oC/W) 26

θJA

Pulsed See Figure 4

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 947 mJ

Power dissipation 300 W

o

Derate above 25

C2W/

Operating and Storage Temperature -55 to 175

Thermal Characteristics

FDI8441 N-Channel PowerTrench

AContinuous (T

o

C

o

C

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case 0.5

Thermal Resistance Junction to Ambient (Note 2) 62

Thermal Resistance Junction to Ambient, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDI8441 FDI8441 TO-262AB Tube NA 50 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 2 2.8 4 V

Drain to Source On Resistance

= 25°C unless otherwise noted

J

VDS = 32V
V

= 0V

GS

ID = 80A, VGS = 10V - 2.2 2.7

ID = 80A, VGS = 10V,
TJ = 175°C

- - 1

TJ = 150°C - - 250

- 3.8 4.7

o

o

o

C/W

C/W

C/W

μA

mΩ

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

FDI8441 Rev.A www.fairchildsemi.com2

Input Capacitance

Output Capacitance - 1250 - pF

Reverse Transfer Capacitance - 685 - pF

VDS = 25V, VGS = 0V,
f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz - 1.1 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

Threshold Gate Charge VGS = 0 to 2V - 29 38 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 32 - nC

Gate to Drain “Miller” Charge - 49 - nC

VDD = 20V

ID = 35A
Ig = 1mA

- 15000 - pF

- 215 280 nC

- 60 - nC

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

FDI8441 N-Channel PowerTrench

t

(on)

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 23 - ns

Turn-On Rise Time - 24 - ns

Turn-Off Delay Time - 75 - ns

Turn-Off Fall Time - 17.9 - ns

Turn-Off Time - - 147 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A.
2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time IF = 35A, di/dt = 100A/μs - 52 68 ns

Reverse Recovery Charge IF = 35A, di/dt = 100A/μs - 76 99 nC

--77ns

V

= 20V, ID = 35A

DD

V

= 10V, RGS = 1.5Ω

GS

I

= 35A - 0.8 1.25 V

SD

= 15A - 0.8 1.0 V

I

SD

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDI8441 Rev.A www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

0 25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

POWER DISSIPATION MULIPLIER

TC, CASE TEMPERATURE(oC)

25 50 75 100 125 150 175

0

50

100

150

200

250

300

TC, CASE TEMPERATURE(oC)

I

D

, DRAIN CURRENT (A)

VGS = 10V

CURRENT LIMITED
BY PACKAGE

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

1E-3

0.01

0.1

1

SINGLE PULSE

D = 0.50

0.20

0.10

0.05

0.02

0.01

NORMALIZED THERMAL

IMPEDANCE, Z

θJC

t, RECTANGULAR PULSE DURATION(s)

DUTY CYCLE - DESCENDING ORDER

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

100

1000

10000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

SINGLE PULSE

I

DM

, PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION(s)

TC = 25oC

I = I

25

175 - T

C

150

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

FDI8441 N-Channel PowerTrench

®

MOSFET

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

FDI8441 Rev.A www.fairchildsemi.com4

Figure 4. Peak Current Capability

Typical Characteristics

110100

0.1

1

10

100

1000

LIMITED
BY PACKAGE

10us

100us

1ms

10ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
AREA MAY B E
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

T

C

= 25

o

C

DC

4000

0.01 0.1 1 10 100 1000

1

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

5000

tAV = (L)(IAS)/(1.3*RATED BV

DSS

- VDD)

If R = 0

If R

≠

0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD) +1]

2.02.53.03.54.04.55.0

0

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

V

DD

= 5V

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

01234

0

40

80

120

160

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

V

GS

= 10V

V

GS

= 5V

V

GS

= 4.5V

V

GS

= 3.5V

V

GS

= 4V

345678910

0

10

20

30

40

50

r

DS(on)

, DRAIN TO SOURCE

ON-RESISTANCE

(mΩ)

V

GS

, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

TJ, JUNCTION TEMPERATURE(oC)

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID = 80A
V

GS

= 10V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

Figure 5. Forward Bias Safe Operating Area

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

FDI8441 N-Channel PowerTrench

®

MOSFET

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

FDI8441 Rev.A www.fairchildsemi.com5

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics

-80 -40 0 40 80 120 160 200

0.4

0.6

0.8

1.0

1.2

NORMALIZED GATE

THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE(oC)

V

GS

= V

DS

I

D

= 250μA

-80 -40 0 40 80 120 160 200

0.90

0.95

1.00

1.05

1.10

1.15

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

I

D

= 250μA

0.1 1 10

100

1000

10000

f = 1MHz
V

GS

= 0V

C

rss

C

oss

C

iss

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

50

40000

0 50 100 150 200 250

0

2

4

6

8

10

ID = 80A

VDD = 20V

VDD = 15V

VDD = 25V

V

GS

, GATE TO SOURCE VOLTAGE(V)

Q

g

, GATE CHARGE(nC)

FDI8441 N-Channel PowerTrench

®

MOSFET

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Figure 14. Gate Charge vs Gate to Source Voltage

FDI8441 Rev.A www.fairchildsemi.com6

TRADEMARKS

tm

tm

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized
to use and is not intended to be an exhaustive list of all such trademarks.

®

ACEx
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
FACT Quiet Series™
FACT
FAST

®

®

®

FastvCore™
FPS™

®

FRFET
Global Power Resourse
Green FPS™

SM

Green FPS™ e-Series™
GOT™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroPak™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP-SPM™
Power220
Power247
POEWEREDGE

®

®

®

®

®

Power-SPM™
PowerTrench
Programmable Active Droop™
QFET

®

®

QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
The Power Franchise
™
TinyBoost™
TinyBuck™
TinyLogic

®

TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™

®

UHC
UniFET™
VCX™

®

FDI8441 N-Channel PowerTrench

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

Preliminary First Production This datasheet contains preliminary data; supplementary data

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product that has

development. Specifications may change in any manner
without notice.

will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
to improve design.

Semiconductor reserves the right to make changes at any
time without notice to improve design.

been discontinued by Fairchild Semiconductor.The datasheet
is printed for reference information only.

Rev. I28

FDI8441 Rev.A www.fairchildsemi.com7