Datasheet FDP045N10A, FDI045N10A Datasheet (Fairchild)

July 2011

G

S

D

TO-220

G

S

D

I2-PAK
FDI Series

G SD

FDP045N10A_F102 / FDI045N10A_F102

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

N-Channel PowerTrench® MOSFET

100V, 164A, 4.5mΩ

Features

• R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

= 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A

DS(on)

R

DS(on)

Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

MOSFET Maximum Ratings T

Symbol Parameter

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

STG

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 1) 656 A

Single Pulsed Avalanche Energy (Note 2) 637 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted

C

FDP045N10A_F102

FDI045N10A_F102

- Continuous (TC = 25oC, Silicon Limited) 164*

- Continuous (TC = 25oC, Package Limited) 120

(TC = 25oC) 263 W

- Derate above 25oC 1.75 W/oC

300

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2011 Fairchild Semiconductor Corporation
FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

Thermal Resistance, Junction to Case 0.57

Thermal Resistance, Junction to Ambient 62.5

Ratings

www.fairchildsemi.com1

Units

A- Continuous (TC = 100oC, Silicon LImited) 116

o

C

o

C

Units

o

C/W

®

MOSFET

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP045N10A FDP045N10A_F102 TO-220 - - 50

FDI045N10A FDI045N10A_F102 I2PAK - - 50

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250µA, Referenced to 25oC - 0.07 - V/oC

VDS = 80V, V

= 0V - - 1

GS

VDS = 80V, TC = 150oC - - 500

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, I

Forward Transconductance

VDS = 10V, ID = 100A (Note 4)

= 100A - 3.8 4.5 mΩ

D

- 132 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

(er) Engry Releted Output Capacitance VDS = 50V, VGS = 0V - 1520 - pF

oss

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 925 1230 pF

Reverse Transfer Capacitance - 34 - pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 17 - nC

Gate Charge Threshold to Plateau - 8 - nC

Gate to Drain “Miller” Charge - 13 - nC

VDS = 50V, VGS = 0V
f = 1MHz

VGS = 10V, VDS = 50V
ID = 100A

(Note 4, 5)

- 3960 5270 pF

- 57 74 nC

µA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 1.9 - Ω

Turn-On Delay Time

Turn-On Rise Time - 26 62 ns

Turn-Off Delay Time - 50 110 ns

Turn-Off Fall Time - 15 40 ns

VDD = 50V, ID = 100A
VGS = 10V, R

(Note 4, 5)

GEN

= 4.7Ω

- 23 56 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 164* A

Maximum Pulsed Drain to Source Diode Forward Current - - 656 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 120 - nC

, Starting TJ = 25°C

DSS

= 0V, I

GS

VGS = 0V, VDD = 50V, I

= 100A - - 1.3 V

SD

= 100A

SD

dIF/dt = 100A/µs (Note 4)

- 75 - ns

®

MOSFET

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

2

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Typical Performance Characteristics

1 2 3 4 5 6

1

10

100

500

-55oC

175oC

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 2

10

100

500

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

6.5V

6.0V

5.5V

5.0V

0.0 0.3 0.6 0.9 1.2 1.5

1

10

100

500

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 100 200 300 400

3.0

3.5

4.0

4.5

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 100

10

100

1000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 10 20 30 40 50 60

0

2

4

6

8

10

*Note: ID = 100A

VDS = 20V
VDS = 50V
VDS = 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

®

MOSFET

3

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Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.90

0.95

1.00

1.05

1.10

*Notes:

1. VGS = 0V

2. ID = 250µA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

*Notes:

1. VGS = 10V

2. ID = 100A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150 175

0

25

50

75

100

125

150

175

VGS = 10V

I

D

, Drain Current [A]

TC, Case Temperature [oC]

R

θJC

= 0.57oC/W

0.1 1 10 100 200

0.1

1

10

100

1000

10ms

30µs

100µs

1ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

DC

0 25 50 75 100

0

1

2

3

4

5

E

OSS

, [µJ]

VDS, Drain to Source Voltage [V]

0.01 0.1 1 10 100 1000

1

10

50

If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

STARTING TJ = 25oC

STARTING TJ = 150oC

I

AS

, Avalanche Current [A]

tAV, Time In Avalanche [ms]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

Figure 11. Eoss vs. Drain to Sourece Voltage Figure 12. Unclamped Inductive
Switching Capability

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

®

MOSFET

4

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Typical Performance Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

1

0.001

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 0.57oC/W Max.

2. Duty Factor, D= t1/t

2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

Figure 13. Transient Thermal Response Curve

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

®

MOSFET

www.fairchildsemi.com5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

®

MOSFET

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

6

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DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

®

MOSFET

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

7

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Package Dimensions

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

TO-220

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

®

MOSFET

Dimensions in Millimeters

8

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Package Dimensions

FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench

I2PAK

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

®

MOSFET

www.fairchildsemi.com9

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:

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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDP045N10A_F102 / FDI045N10A_F102 Rev. A1

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I55

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MOSFET