Datasheet fdh5500_f085 Datasheet

FDH5500_F085

N-Channel UltraFET Power MOSFET

55V, 75A, 7mΩ

FDH5500_F085 N-Channel UltraFET Power MOSFET

October 2008

Features

 Typ r

 Typ Q

 Simulation Models

-Temperature Compensated PSPICE and SABER
Models

 Peak Current vs Pulse Width Curve

 UIS Rating Curve

 Related Literature

-TB334, “Guidelines for Soldering Surface Mount
Componets to PC Boards“

 Qualified to AEC Q101

 RoHS Compliant

= 5.2mΩ at V

DS(on)

= 118nC at VGS = 10V

g(10)

= 10V, ID = 75A

GS

TM

Applications

 DC Linear Mode Control

 Solenoid and Motor Control

 Switching Regulators

 Automotive Systems

©2008 Fairchild Semiconductor Corporation
FDH5500_F085 Rev. A1

www.fairchildsemi.com1

FDH5500_F085 N-Channel UltraFET Power MOSFET

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

V

V

I

E

P

T

T

DSS

DGR

GS

D

AS

D

J

L

pkg

Drain to Source Voltage (Note 1) 55 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 55 V

Gate to Source Voltage ±20 V

Drain Current Continuous (TC < 135oC, V

= 10V) 75

GS

Pulsed See Figure 4

Single Pulse Avalanche Energy (Note 2) 864 mJ

Power Dissipation 375 W

o

Dreate above 25

, T

Operating and Storage Temperature -55 to + 175

STG

C2.5W/

Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) 300

Max. Package Temp. for Soldering (Package Body for 10sec) 260

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance Junction to Case 0.4

Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area 30

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH5500

Electrical Characteristics T

FDH5500_F085 TO-247 Tube N/A 30 units

= 25°C unless otherwise noted

C

A

o

C

o

CT

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 55 - - V

V

= 50V, VGS = 0V - - 1

Zero Gate Voltage Drain Current

DS

= 45V TC = 150oC - - 250

V

DS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(th)

r

DS(on)

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA22.94V

Drain to Source On Resistance ID = 75A, VGS= 10V - 5.2 7 mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(TOT)

Q

g(10)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance

Output Capacitance - 1310 - pF

Reverse Transfer Capacitance - 395 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 20V VGS = 0 to 20V

V

= 30V

Total Gate Charge at 10V VGS = 0 to 10V - 118 153 nC

Threshold Gate Charge VGS = 0 to 2V - 6.2 8.1 nC

Gate to Source Gate Charge

Gate to Drain “Miller“ Charge - 51 - nC

DD

I

= 75A

D

R

= 0.4Ω

L

I

= 1.0mA

g

- 3565 - pF

- 206 268 nC

- 17.8 - nC

μA

FDH5500_F085 Rev. A1 www.fairchildsemi.com2

FDH5500_F085 N-Channel UltraFET Power MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: Starting TJ = 25oC to175oC.
2: Starting TJ = 25oC, L = 0.48mH, IAS = 60A

Turn-O n Ti me

Turn-On Delay Time - 13.7 - ns

Rise Time - 102 - ns

Turn-O ff Delay Time - 34 - ns

Fall Time - 22 - ns

= 30V, ID = 75A,

V

DD

R

= 0.4Ω, VGS = 10V,

L

R

= 2.5Ω

GS

- - 185 ns

Turn-O ff Time - - 9 1 ns

Source to Drain Diode Voltage ISD = 75A - 1 1.25 V

Reverse Recovery Time

Reverse Recovery Charge - 77 100 nC

= 75A, dISD/dt = 100A/μs

I

F

-6078ns

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDH5500_F085 Rev. A1 www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

0 25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

POWER DISSIPATION MULTIPLIER

TC, CASE TEMPERATURE(oC)

25 50 75 100 125 150 175

0

30

60

90

120

150

180

CURRENT LIMITED
BY PACKAGE

VGS = 10V

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE(oC)

10

-5

10

-4

10

-3

10

-2

10

-1

110

0.01

0.1

1

SINGLE PULSE

D = 0.50

0.20

0.10

0.05

0.02

0.01

NORMALIZED THERMAL

IMPEDANCE, Z

θJC

t, RECTANGULAR PULSE DURATION(s)

DUTY CYCLE - DESCENDING ORDER

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

C

P

DM

t

1

t

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

100

1000

10000

VGS = 10V

SINGLE PULSE

I

DM

, PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION(s)

TC = 25oC

I = I

2

175 - T

C

150

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

FDH5500_F085 N-Channel UltraFET Power MOSFET

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

FDH5500_F085 Rev. A1 www.fairchildsemi.com4

Figure 4. Peak Current Capability

Typical Characteristics

1 10 100 200

0.1

1

10

100

1000

100us

1ms

10ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

T

C

= 25

o

C

DC

0.01 0.1 1 10 100 1000 5000

1

10

100

1000

STARTING TJ = 150oC

STARTING TJ = 25oC

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

tAV = (L)(IAS)/(1.3*RATED BV

DSS

- VDD)

If R = 0

If R

≠

0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD) +1]

01234567

0

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

V

DD

= 5V

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

012345

0

40

80

120

160

VGS = 5.5V

VGS = 10V

VGS = 6V

VGS = 4.5V

VGS = 5V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

46810

0

10

20

30

40

I

D

= 75A

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

r

DS(on)

, DRAIN TO SOURCE

ON-RESISTANCE

(mΩ)

V

GS

, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

ID = 75A
V

GS

= 10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE(oC)

Figure 5. Forward Bias Safe Operating Area

FDH5500_F085 N-Channel UltraFET Power MOSFET

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

FDH5500_F085 Rev. A1 www.fairchildsemi.com5

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics

-80 -40 0 40 80 120 160 200

0.4

0.6

0.8

1.0

1.2

V

GS

= V

DS

I

D

= 250μA

NORMALIZED GATE

THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE(oC)

-80 -40 0 40 80 120 160 200

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

ID = 1mA

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

0.1 1 10 80

100

1000

10000

f = 1MHz
V

GS

= 0V

C

rss

C

oss

C

iss

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 20406080100120140

0

2

4

6

8

10

ID = 75A

VDD = 40V

VDD = 20V

VDD = 30V

Q

g

, GATE CHARGE(nC)

V

GS

, GATE TO SOURCE VOLTAGE(V)

FDH5500_F085 N-Channel UltraFET Power MOSFET

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Figure 14. Gate Charge vs Gate to Source Voltage

FDH5500_F085 Rev. A1 www.fairchildsemi.com6

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FDH5500_F085 N-Channel UltraFET Power MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

FDH5500_F085 Rev. A1 www.fairchildsemi.com7

Rev. I36