Datasheet fdg332pz Datasheet

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Page 1

December 2008

FDG332PZ P-Channel PowerTrench

FDG332PZ

P-Channel PowerTrench® MOSFET

-20V, -2.6A, 97m:

Features

 Max r

 Very low level gate drive requirements allowing operation

in 1.5V circuits

 Very small package outline SC70-6

 RoHS Compliant

= 95m: at VGS = -4.5V, ID = -2.6A

DS(on)

= 115m: at VGS = -2.5V, ID = -2.2A

DS(on)

= 160m: at VGS = -1.8V, ID = -1.9A

DS(on)

= 330m: at VGS = -1.5V, ID = -1.0A

DS(on)

SC70-6

Pin 1

General Description

This P-Channel MOSFET uses Fairchild’s advanced low

voltage PowerTrench battery power management applications.

process. It has been optimized for

Applications

 Battery management

 Load switch

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage -20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous -2.6

-Pulsed -9

Power Dissipation (Note 1a) 0.75

Power Dissipation (Note 1b) 0.48

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient Single operation (Note 1a) 170

Thermal Resistance, Junction to Ambient Single operation (Note 1b) 260

2P FDG332PZ SC70-6 7’’ 8 mm 3000 units

= 25°C unless otherwise noted

°C/W

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FDG332PZ P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -20 V

Breakdown Voltage Temperature Coefficient

= -250PA, referenced to 25°C -13 mV/°C

Zero Gate Voltage Drain Current VDS = -16V, VGS= 0V -1 PA

Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 PA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -0.4 -0.7 -1.5 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= -250PA, referenced to 25°C 2.5 mV/°C

= -4.5V, ID = -2.6A 73 95

= -2.5V, ID = -2.2A 90 115

= -1.8V, ID = -1.9A 117 160

= -1.5V, ID = -1.0A 147 330

= -4.5V, ID = -2.6A , TJ = 125°C 100 133

Forward Transconductance VDD = -5V, ID = -2.6A 9 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 85 115 pF

= -10V, VGS = 0V, f = 1MHZ

Reverse Transfer Capacitance 75 115 pF

420 560 pF

MOSFET

Switching Characteristics

d(on)

d(off)

Drain-Source Diode Characteristics

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

TJA

the user's board design.

Turn-On Delay Time

Rise Time 4.8 10 ns

Turn-Off Delay Time 59 95 ns

= -10V, ID = -2.6A,

= -4.5V, R

GEN

Fall Time 28 45 ns

Total Gate Charge

Gate to Source Charge 0.9 nC

= -4.5V, VDD = -10V, ID = -2.6A

Gate to Drain “Miller” Charge 1.9 nC

and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current -0.6 A

Source to Drain Diode Forward Voltage VGS= 0V, IS= -0.6A (Note 2) -0.7 -1.2 V

Reverse Recovery Time

Reverse Recovery Charge 8 13 nC

a. 170°C/W when mounted on a 1 in

= 2.6A, di/dt = 100A/Ps

pad of 2 oz copper .

= 6:

5.2 10 ns

7.6 10.8 nC

28 45 ns

is guaranteed by design while R

TJC

b. 260°C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

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FDG332PZ P-Channel PowerTrench

Typical Characteristics T

VGS = -4.5V

, DRAIN CURRENT (A)

-I

0.0 0.4 0.8 1.2 1.6 2.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

1.6

ID = -2.6A V

= -4.5V

1.4

1.2

VGS = -3V

VGS = -2.5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

VGS = -1.8V

VGS = -1.5V

2.5

VGS = -1.5V

2.0

VGS = -1.8V

1.5

NORMALIZED

VGS = -2.5V

1.0

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

DRAIN TO SOURCE ON-RESISTANCE

0.5 0369

-I

, DRAIN CURRENT (A)

VGS = -3V

= -4.5V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

(m:)

300

ID= -2.6A

250

200

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

MOSFET

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

Figure 3. Normalized On - Resistance

vs Junction Temperature

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= -5V

, DRAIN CURRENT (A)

-I

0.0 0.5 1.0 1.5 2.0 2.5

TJ= 150oC

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

Figure 5. Transfer Characteristics

, DRAIN TO

DS(on)

150

TJ= 125oC

100

SOURCE ON-RESISTANCE

12345

Figure 4.

TJ= 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

Source Voltage

= 0V

TJ= 150oC

0.1

TJ = 25oC

0.01

, REVERSE DRAIN CURRENT (A)

-I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

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FDG332PZ P-Channel PowerTrench

Typical Characteristics T

4.5

ID= -2.6A

= -5V

3.0

1.5

, GATE TO SOURCE VOLTAGE(V)

-V

0.0 02468

Figure 7.

Gate Charge Characteristics Figure 8.

THIS AREA IS LIMITED BY r

0.1

, DRAIN CURRENT (A)

-I

SINGLE PULSE

TJA

0.01

0.1 1 10

DS(on)

= MAX RATED

= 260oC/W

= 25

-VDS, DRAIN to SOURCE VOLTAGE (V)

VDD = -10V

Qg, GATE CHARGE (nC)

= 25°C unless otherwise noted

VDD = -15V

100us

1ms

10ms

100ms

1s 10s

1000

iss

oss

100

CAPACITANCE (pF)

f = 1MHz

= 0V

rss

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

VGS= 0V

-1

-2

-3

, GATE LEAKAGE CURRENT(uA)

-I

-4

0 5 10 15 20

TJ= 150oC

-V

GATE TO SOURCE VOLTAGE (V)

TJ= 25oC

MOSFET

Figure 9.

F o r w ar d B i a s S a fe

Operating Area

100

, PEAK TRANSIENT POWER (W)

(PK)

0.1

VGS = -4.5V

-3

Figure 10.

-2

-1

t, PULSE WIDTH (s)

Figure 11. Transient Thermal Response Curve

Gate Leakage Current vs Gate to

Source Voltage

SINGLE PULSE

= 260oC/W

TJA

= 25oC

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FDG332PZ P-Channel PowerTrench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

TJA

-3

-2

TJA

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

= 25°C unless otherwise noted

= 260oC/W

-1

t, RECTANGULAR PULSE DURATION (s)

Figure 12.

Transient Thermal Response Curve

x R

+ T

qJA

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

qJA

MOSFET

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Page 6

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™

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* EZSWITCH™ and FlashWriter

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Rev. I37