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FDG329N
FDG329N
20V N-Channel PowerTrench MOSFET
October 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
and gate charge (QG) in a small package.
DS(ON)
Features
• 1.5 A, 20 V. R
R
• Fast switching speed
• Low gate charge (3.3 nC typical)
= 90 mΩ @ VGS = 4.5 V.
DS(ON)
= 115 mΩ @ VGS = 2.5 V
DS(ON)
Applications
• DC/DC converter
• Power management
• Load switch
S
D
D
G
Pin 1
SC70-6
D
D
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability.
1
2
3
6
5
4
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 1.5 A
– Pulsed 6
Power Dissipation for Single Operation (Note 1a) 0.42 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150 °C
± 12
0.38
V
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 300
Thermal Resistance, Junction-to-Ambient (Note 1b) 333
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.29 FDG329N 7’’ 8mm 3000 units
2001 Fairchild Semiconductor International
°C/W
°C/W
FDG329N Rev C (W)
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Electrical Characteristics T
FDG329N
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
Breakdown Voltage Temperature
Coefficient
J
ID = 250 µA,Referenced to 25°C 13 mV/°C
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.7 1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
ID = 250 µA,Referenced to 25°C
VGS = 4.5 V, ID = 1.5 A
VGS = 2.5 V, ID = 1.3 A
VGS = 4.5 V, ID = 1.5 A, TJ =125°C
–3 mV/°C
70
86
90
On–State Drain Current VGS = 4.5V, VDS = 5 V 6 A
Forward Transconductance VDS = 5 V, ID = 1.5 A 8 S
90
115
145
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 324 pF
Output Capacitance 82 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V
42 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 5 10 ns
Turn–On Rise Time 7 14 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 13 23 ns
Turn–Off Fall Time
Total Gate Charge 3.3 4.6 nC
Gate–Source Charge 0.95 nC
VDS = 10 V, ID = 1.5 A,
VGS = 4.5 V
Gate–Drain Charge
1.6 3 ns
0.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 0.32 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 0.32 A (Note 2) 0.75 1.2 V
is determined by the user's board design.
mΩ
a) 300°C/W when
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
mounted on a 1in2 pad
of 2 oz copper.
b) 333°C/W when mounted
on a minimum pad of 2 oz
copper.
FDG329N Rev C (W)
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Typical Characteristics
I
D
, DRAIN CURRENT (A)
2.5V
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
, DRAIN CURRENT (A)
I
S
, REVERSE DRAIN CURRENT (A)
FDG329N
12
VGS = 4.5V
10
8
6
4
2
0
0 1 2 3
3.0V
3.5V
2.0V
VDS, DRAIN TO SOURCE VOLTAGE (V)
2
VGS = 2.0V
1.8
1.6
1.4
1.2
R
1
0.8
0 2 4 6 8 10 12
2.5V
3.0V
ID, DIRAIN CURRENT (A)
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 1.5A
VGS = 4.5V
1.4
1.2
1
R
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
0.22
0.18
0.14
0.1
0.06
TA = 25oC
0.02
1 2 3 4 5
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
4.5V
ID = 0.8 A
Figure 3. On-Resistance Variation with
Temperature.
10
VDS = 5V
8
6
4
2
0
0.5 1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG329N Rev C (W)
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Typical Characteristics
V
, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
I
D
, DRAIN CURRENT (A)
1s
1ms
P(pk), PEAK TRANSIENT POWER (W)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
FDG329N
5
ID = 1.5A VDS = 5V
4
15V
450
10
360
270
C
ISS
3
180
2
GS
1
90
0
C
OSS
C
RSS
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
VGS = 4.5V
SINGLE PULSE
0.1
R
= 333oC/W
θ
JA
TA = 25oC
0.01
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10ms
100ms
DC
100µs
10
8
6
4
2
0
0.000010.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
SINGLE PULSE
R
= 333°C/W
θJA
TA = 25°C
f = 1 MHz
VGS = 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
R
(t) = r(t) + R
θJA
R
= 333°C/W
θ
JA
P(pk
)
t
1
t
2
TJ - TA = P * R
Duty Cycle, D = t1 / t
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG329N Rev C (W)
θJA
(t)
θJA
2
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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