Page 1
April 2008
FDFMA3N109
tm
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
PIN 1
A NC D
K D
K G S
MicroFET 2x2
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage
ID
TJ, T
STG
V
Schottky Repetitive Peak Reverse Voltage 28 V
RRM
IO Schottky Average Forward Current 1 A
Drain Current – Continuous (TC = 25°C, VGS = 4.5V) 2.9
– Continuous (TC = 25°C, VGS = 2.5V) 2.7
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 1.5 PD
Power Dissipation for Single Operation
Operating and Storage Temperature –55 to +150
Features
MOSFET:
• 2.9 A, 30 V R
R
R
Schottky:
• V
< 0.46 V @ 500mA
F
Low profile – 0.8 mm maximum – in the new package
•
MicroFET 2x2 mm
•
HBM ESD pro
• RoHS Compliant
= 123 mΩ @ VGS = 4.5 V
DS(ON)
= 140 mΩ @ VGS = 3.0 V
DS(ON)
= 163 mΩ @ VGS = 2.5 V
DS(ON)
tection level = 1.8kV typical
(Note 3
1
A K
2
NC G
3
D S
±12
(Note 1b) 0.65
6
5
4
V
A
W
°C
)
Thermal Characteristics
R
θJA
R
θJA
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a) 83
(Note 1b) 193
(Note 1c) 101
(Note 1d) 228
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
©2008 Fairchild Semiconductor Corpora tion
109 FDFMA3N109 7’’ 8mm 3000 units
°C/W
FDFMA3N109 Rev B2
Page 2
FDFMA3N109 Integrated N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage Current VGS = ± 12 V, VDS = 0 V ±10
GSS
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
30 V
25 mV/°C
µA
µA
On Characteristics
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 4.5V, ID = 2.9A 75 123
VGS = 3.0V, ID = 2.7A 84 140
VGS = 2.5V, ID = 2.5A 92 163
VGS = 4.5V, ID = 2.9A, TC = 85°C 95 166
VGS = 3.0V, ID = 2.7A, TC = 150°C 138 203
= 2.5V, ID = 2.5A, TC = 150°C 150 268
V
GS
0.4 1.0 1.5 V
–3
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 190 220 pF
iss
C
Output Capacitance 30 40 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance V
V
= 15 V, V
DS
= 0 V,
GS
f = 1.0 MHz
20 30 pF
= 0 V, f = 1.0 MHz 4.6
GS
Ω
Switching Characteristics (Note 2)
V
t
Turn–On Delay Time 6 12 ns
d(on)
tr Turn–On Rise Time 8 16 ns
t
Turn–Off Delay Time 12 21 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 2.4 3.0 nC
Qgs Gate–Source Charge 0.35 nC
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
DD
= 4.5 V, R
V
GS
= 15 V, ID = 2.9 A,
V
DS
V
= 4.5 V
GS
GEN
= 6 Ω
2 4 ns
0.75 nC
®
MOSFET and Schottky Diode
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.9 A
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 10 ns
Qrr Diode Reverse Recovery Charge
IS = 2.0 A 0.9 1.2
I
= 1.1 A 0.8 1.2
S
= 2.9 A,
I
F
dI
/dt = 100 A/µs
F
2 nC
V
Schottky Diode Characteristics
IR Reverse Leakage VR = 28 V
VF Forward Voltage IF = 1 A
VF Forward Voltage IF = 500 mA
= 25°C
T
J
T
= 85°C
J
T
= 25°C
J
= 85°C
T
J
T
= 25°C
J
= 85°C
T
J
10
0.07 4.7 mA
0.50 0.57
0.49 0.60
0.40 0.46
0.36 0.43
100
µA
V
V
FDFMA3N109 Rev B2
Page 3
FDFMA3N109 Integrated N-Channel PowerTrench
Electrical Characteristics T
Notes:
is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
determined by the user's board design.
(a) MOSFET R
(b) MOSFET R
(c) Schottky R
(d) Schottky R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
= 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
θJA
= 193°C/W when mounted on a minimum pad of 2 oz copper
θJA
= 101°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
θJA
= 228°C/W when mounted on a minimum pad of 2 oz copper
θJA
a) 83oC/W
when
mounted on
a 1in2 pad
of 2 oz
copper
= 25°C unless otherwise noted
A
b) 193oC/W
when
mounted on
a minimum
pad of
2 oz copper
is guaranteed by design while R
θJC
c)101 oC/W
when
mounted on
a 1in2 pad
of 2 oz
copper
is
θJA
b) 228oC/W
when
mounted on
a minimum
pad of
2 oz copper
®
MOSFET and Schottky Diode
FDFMA3N109 Rev B2
Page 4
Typical Characteristics
FDFMA3N109 Integrated N-Channel PowerTrench
10
VGS = 4.5V
8
3.5V 2.9V
6
4
, DRAIN CURRENT (A)
D
I
2
0
00.511.522.53
V
2.5V
2.7V
, DRAIN-SOURCE VOLTAGE (V)
DS
2.0V
1.5V
1.8
VGS = 2.0V
1.6
1.4
, NORMALIZED
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
2.5V
1.2
1
0.8
0246810
2.7V
2.9V
, DRAIN CURRENT (A)
I
D
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 2.9A
V
= 4.5V
GS
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
Figure 3. On-Resistance Variation with
Temperature.
0.24
0.2
0.16
0.12
, ON-RESISTANCE (OHM)
0.08
DS(ON)
TA = 25oC
R
0.04
0246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
4.0V
4.5V
ID = 1.45A
®
MOSFET and Schottky Diode
10
VDS = 5V
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
0.511.522.53
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
125oC
25oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
100
VGS = 0V
10
1
0.1
TA = 125oC
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
25oC
-55oC
-V
, BODY DIODE FORWARD VOLTAGE (V)
SD
with Source Current and Temperature.
FDFMA3N109 Rev B2
Page 5
Typical Characteristics
FDFMA3N109 Integrated N-Channel PowerTrench
10
ID = 2.9A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0123456
VDS = 10V
Q
, GATE CHARGE (nC)
g
20V
15V
300
250
200
150
100
CAPACITANCE (pF)
50
C
rss
0
0 5 10 15 20 25 30
C
oss
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C
iss
f = 1MHz
= 0 V
V
GS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10
1
TJ = 125oC
0.1
0.01
, FORWARD LEAKAGE CURRENT (A )
F
I
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0. 7 0.8
TJ = 25oC
VF, FORWARD VOLTAGE (V)
0.1
0.01
0.001
0.0001
0.00001
, REVERSE LEAKAGE CURRENT (A )
R
I
0.000001
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (V )
TJ = 125oC
TJ = 100oC
TJ = 25oC
Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.
®
MOSFET and Schottky Diode
1
D = 0.5
0.2
0.1
THERMAL RESISTANCE
0.01
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) * R
θ
JA
R
=193°C/W
θ
JA
P(pk)
t
1
T
- TA = P * R
J
Duty Cycle, D = t
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
θ
JA
t
2
(t)
θ
JA
/ t
1
2
FDFMA3N109 Rev B2
Page 6
Dimensional Outline and Pad Layout
FDFMA3N109 Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
rev3
FDFMA3N109 Rev B2
Page 7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
®
®
®
®
®
*
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise
tm
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
FDFMA3N109 Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDFMA3N109 Rev B2
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