Datasheet fdfma2p859t Datasheet

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FDFMA2P859T Integrated P-Channel PowerTrench

FDFMA2P859T

July 2009

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

–20 V, –3.0 A, 120 m: Features

MOSFET:

 Max r

Schottky:

 VF < 0.54 V @ 1 A

 Low profile - 0.55 mm maximum - in the new package

MicroFET 2x2 Thin

 Free from halogenated compounds and antimony oxides

 RoHS compliant

= 120 m: at VGS = –4.5 V, ID = –3.0 A

DS(on)

= 160 m: at VGS = –2.5 V, ID = –2.5 A

DS(on)

= 240 m: at VGS = –1.8 V, ID = –1.0 A

DS(on)

Pin 1

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

MOSFET and Schottky Diode

MicroFET 2x2 Thin

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

RRM

, T

STG

Drain to Source Voltage 20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) –3

-Pulsed –6

Power Dissipation (Note 1a) 1.4

Power Dissipation (Note 1b) 0.7

Operating and Storage Junction Temperature Range –55 to +150 °C

Schottky Repetitive Peak Reverse Voltage 30 V

Schottky Average Forward Current 1 A

= 25 °C unless otherwise noted

Thermal Characteristics

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 86

Thermal Resistance, Junction to Ambient (Note 1b) 173

Thermal Resistance, Junction to Ambient (Note 1c) 86

Thermal Resistance, Junction to Ambient (Note 1d) 140

Package Marking and Ordering Information

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

59 FDFMA2P859T MicroFET 2x2 Thin 7 ’’ 8 mm 3000 units

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FDFMA2P859T Integrated P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = –250 PA, VGS = 0 V –20 V

Breakdown Voltage Temperature Coefficient

= –250 PA, referenced to 25 °C –12 mV/°C

Zero Gate Voltage Drain Current VDS = –16 V, VGS= 0 V –1 PA

Gate to Source Leakage Current VGS = ±8 V, VDS= 0 V ±100 nA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = –250 PA –0.4 –0.7 –1.3 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= –250 PA, referenced to 25 °C 2 mV/°C

= –4.5 V, ID = –3.0 A 90 120

= –2.5 V, ID = –2.5 A 120 160

= –1.8 V, ID = –1.0 A 172 240

= –4.5 V, ID = –3.0 A

= 125 °C

118 160

Forward Transconductance VDS = –5 V, ID = –3.0 A 7 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 80 pF

Reverse Transfer Capacitance 45 pF

= –10 V, VGS = 0 V,

f = 1.0 MHz

435 pF

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time

Rise Time 11 19 ns

Turn-Off Delay Time 15 27 ns

Fall Time 612ns

Total Gate Charge

Gate to Source Gate Charge 0.8 nC

Gate to Drain “Miller” Charge 0.9 nC

Drain-Source Diode Characteristics

Maximum Continuous Drain-Source Diode Forward Current –1.1 A

Source to Drain Diode Forward Voltage VGS= 0 V, IS= –1.1 A (Note 2) –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 6 nC

Schottky Diode Characteristics

Reverse Leakage VR = 10 V

Reverse Leakage VR = 20 V

Forward Voltage IF = 100 mA

Forward Voltage IF = 1 A

= –10 V, ID = –1.0 A

= –4.5 V, R

= –10 V, ID = –3.0 A

= –4.5 V

= –3.0 A, di/dt = 100 A/Ps

GEN

= 6 :

918ns

46nC

17 ns

= 25 °C 0.3 1.0 PA

= 85 °C 25 40 PA

= 125 °C 0.28 0.37 mA

= 25 °C 1.0 2.5 PA

= 85 °C 74 110 PA

= 125 °C 0.73 1.00 mA

= 25 °C 0.40 0.41 V

= 85 °C 0.31 0.33 V

= 125 °C 0.26 0.27 V

= 25 °C 0.52 0.54 V

= 85 °C 0.45 0.47 V

= 125 °C 0.41 0.43 V

MOSFET and Schottky Diode

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FDFMA2P859T Integrated P-Channel PowerTrench

Electrical Characteristics T

Notes:

1: R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.

(a) MOSFET R

(b) MOSFET R

(d) Schottky R

2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

= 86 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.

TJA

= 173 oC/W when mounted on a minimum pad of 2 oz copper.

TJA

= 86 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.

TJA

= 140 oC/W when mounted on a minimum pad of 2 oz copper.

TJA

a)86 oC/W when mounted on a 1 in2pad of 2 oz copper.

= 25 °C unless otherwise noted

b)173 oC/W when mounted on a minimum pad of 2 oz copper.

is guaranteed by design while R

TJC

c)86 oC/W when mounted on a 1 in2pad of 2 oz copper.

is determined by the

TCA

d)140 oC/W when mounted on a minimum pad of 2 oz copper.

MOSFET and Schottky Diode

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FDFMA2P859T Integrated P-Channel PowerTrench

Typical Characteristics T

DRAIN CURRENT (A)

-I

0 0.5 1.0 1.5 2.0 2.5

-V

Figure 1.

1.4

ID = -3.0 A V

= -4.5 V

1.3

1.2

1.1

1.0

NORMALIZED

0.9

DRAIN TO SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = -4.5 V

VGS = -3.5 V

VGS = -3 V

VGS = -2.5 V

PULSE DURATION = 300 Ps DUTY CYCLE = 2% MAX

DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

JUNCTION TEMPERATURE

= 25 °C unless otherwise noted

VGS = -2 V

VGS = -1.8 V

VGS = -1.5 V

(

)

3.0

PULSE DURATION = 300 Ps

2.5

VGS = -1.5 V

DUTY CYCLE = 2%MAX

VGS = -1.8 V

2.0

= -2.5 V

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0123456

VGS = -3 V

-I

DRAIN CURRENT (A)

VGS= -3.5 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

DRAIN TO

DS(on)

0.28

)

0.24

(

0.20

0.16

0.12

0.08

SOURCE ON-RESISTANCE

0.04 0246810

-V

GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 300 Ps DUTY CYCLE = 2% MAX

ID= -1.5 A

TJ= 125 oC

TJ= 25 oC

Source Voltage

= -2 V

=-4.5 V

MOSFET and Schottky Diode

PULSE DURATION = 300 Ps DUTY CYCLE = 2% MAX

VDS= -5 V

, DRAIN CURRENT (A)

-I

0 0.5 1.0 1.5 2.0 2.5

TJ = 125 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

VGS= 0 V

TJ= 125 oC

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

-I

0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DI ODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n D io d e

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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FDFMA2P859T Integrated P-Channel PowerTrench

Typical Characteristics T

ID= -3.0 A

VDD = -5 V

, GATE TO SOURCE VOLTAGE (V)

-V

012345

Qg, GATE CHARGE (nC)

Figure 7.

0.1

, DRAIN CURRENT (A)

-I

0.01

0.1 1 10

Gate Charge Characteristics Figure 8.

THIS AREA IS LIMITED BY r

SINGLE PULSE T

F i g u re 9 .

DS(on)

= MAX RATED

= 173 oC/W

= 25 oC

-VDS, DRAIN to SOURCE VOLTAGE (V)

F o r w ar d B i a s S a fe

Operating Area

= 25 °C unless otherwise noted

VDD = -10 V

VDD= -15 V

100 us

1 ms

10 ms

100 ms

1 s

10 s

700

600

500

iss

400

300

200

CAPACITANCE (pF)

oss

100

rss

048121620

-VDS, DRAIN TO SOURCE VOLTAGE (V)

f = 1 MHz V

= 0 V

C a p a c i t a n c e v s D r a i n

to Source Voltage

TJ= 125 oC

0.1

FORWARD CURRENT (A)

0.01 0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 10.

Schottky Diode Foward Volta ge

TJ= 25 oC

FORWARD V OLTAG E (V)

MOSFET and Schottky Diode

10000

1000

100

TJ= 125 oC

TJ = 85 oC

TJ = 25 oC

0.1

REVERSE LEAKAGE CURRENT (mA)

0.01 0 5 10 15 20 25 30

Figure 11.

REVERSE VOLTAGE (V)

Schottky Diode Reverse Current Figure 12.

200

100

VGS = -10 V

PEAK TRANSIENT POWER (W)

)

(

0.5 10-410-310-210-1110

t, PULSE WIDTH (sec)

SINGLE PULSE

= 173 oC/W

= 25 oC

100 1000

S i n g l e P u l s e M a x i m u m

Power Dissipation

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FDFMA2P859T Integrated P-Channel PowerTrench

Typical Characteristics T

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

-3

Figure 13. Junction to Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

SINGLE PULSE

= 173 oC/W

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

TJA

x R

110

+ T

TJA

100 1000

MOSFET and Schottky Diode

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Page 7

Dimensional Outline and Pad Layout

FDFMA2P859T Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

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Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

TRUECURRENT™*

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDFMA2P859T Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I41

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