Datasheet fdfma2p853t Datasheet

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December 2008

FDFMA2P853T

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

–20 V, –3.0 A, 120 mΩ Features

General Description

FDFMA2P853T Integrated P-Channel PowerTrench

MOSFET:

 Max r  Max r  Max r

= 120 mΩ at VGS = –4.5 V, ID = –3.0 A

DS(on)

= 160 mΩ at VGS = –2.5 V, ID = –2.5 A

DS(on)

= 240 mΩ at VGS = –1.8 V, ID = –1.0 A

DS(on)

Schottky:

 VF < 0.46 V @ 500 mA

 Low profile - 0.55 mm maximum - in the new package

MicroFET 2x2 Thin

 RoHS Compliant  Free from halogenated compounds and antimony

oxides

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.

Pin 1

MicroFET 2X2 Thin

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V V

P T

V I

DS GS

J RRM

, T

STG

Drain to Source Voltage –20 V Gate to Source Voltage ±8 V Drain Current -Continuous TA = 25 °C (Note 1a) –3.0

-Pulsed –6 Power Dissipation TA = 25 °C (Note 1a) 1.4 Power Dissipation T Operating and Storage Junction Temperature Range –55 to +150 °C Schottky Repetitive Peak Reverse Voltage 30 V Schottky Average Forward Current 1 A

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.7

Thermal Characteristics

MOSFET and Schottky Diode

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 86 Thermal Resistance, Junction to Ambient (Note 1b) 173 Thermal Resistance, Junction to Ambient (Note 1c) 86 Thermal Resistance, Junction to Ambient (Note 1d) 140

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

53 FDFMA2P853T MicroFET 2x2 Thin 7 ’’ 8 mm 3000 units

°C/W

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FDFMA2P853T Integrated P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = –250 µA, VGS = 0 V –20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = –16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= –250 µA, referenced to 25 °C –12 mV/°C

= 0 V –1 µA

= 0 V ±100 nA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = –250 µA –0.4 –0.7 –1.3 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= –250 µA, referenced to 25 °C 2 mV/°C

= –4.5 V, ID = –3.0 A 90 120

= –2.5 V, ID = –2.5 A 120 160

= –1.8 V, ID = –1.0 A 172 240

= –4.5 V, ID = –3.0 A

= 125 °C

118 160

Forward Transconductance VDS = –5 V, ID = –3.0 A 7 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 80 pF Reverse Transfer Capacitance 45 pF

= –10 V, VGS = 0 V,

f = 1.0 MHz

435 pF

mΩ

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 11 19 ns Turn-Off Delay Time 15 27 ns Fall Time 612ns Total Gate Charge Gate to Source Gate Charge 0.8 nC Gate to Drain “Miller” Charge 0.9 nC

Drain-Source Diode Characteristics

Maximum Continuous Drain-Source Diode Forward Current –1.1 A Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 6 nC

Schottky Diode Characteristics

Reverse Leakage VR = 5 V

Reverse Leakage VR = 20 V

Forward Voltage IF = 500 mA

Forward Voltage IF = 1 A

918ns

= –10 V, ID = –1.0 A

= –4.5 V, R

= –10 V, ID = –3.0 A

= –4.5 V

= 0 V, IS = –1.1 A (Note 2) –0.8 –1.2 V

= –3.0 A, di/dt = 100 A/µs

GEN

= 6 Ω

46nC

17 ns

= 25 °C 9.9 50 µA

= 125 °C 2.3 10 mA

= 25 °C 9.9 100 µA

= 85 °C 0.3 1 mA

= 125 °C 2.3 10 mA

= 25 °C 0.4 0.46 V

= 125 °C 0.3 0.35 V

= 25 °C 0.5 0.55 V

= 125 °C 0.49 0.54 V

MOSFET and Schottky Diode

FDFMA2P853T Rev.B1

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FDFMA2P853T Integrated P-Channel PowerTrench

Electrical Characteristics T

Notes:

1: R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

user's board design. (a) MOSFET R

(b) MOSFET R (c) Schottky R (d) Schottky R

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

= 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.

θJA

= 173 oC/W when mounted on a minimum pad of 2 oz copper.

θJA

= 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.

θJA

= 140 oC/W when mounted on a minimum pad of 2 oz copper.

θJA

a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper.

= 25 °C unless otherwise noted

b)173 oC/W when mounted on a

pad of 2

minimum oz copper.

is guaranteed by design while R

θJC

c)86

C/W when mounted on a 1 in2 pad of 2 oz copper.

is determined by the

θJA

d)140 oC/W when mounted on a minimum pad of 2 oz copper.

MOSFET and Schottky Diode

FDFMA2P853T Rev.B1

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Page 4

Typical Characteristics T

= 25 °C unless otherwise noted

FDFMA2P853T Integrated P-Channel PowerTrench

VGS = -4.5 V

DRAIN CURRENT (A)

-I

0 0.5 1.0 1.5 2.0 2.5

-V

Figure 1.

1.4

ID = -3.0 A V

= -4.5 V

1.3

VGS = -3.5 V

VGS = -3 V

VGS = -2.5 V

PULSE DURA TION = 300 µs DUTY CYCLE = 2% MAX

DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

VGS = -2 V

VGS = -1.8 V

VGS = -1.5 V

1.2

1.1

1.0

NORMALIZED

0.9

DRAIN TO SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150

JUNCTION TEMPERATURE

(

)

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

3.0

PULSE DURATION = 300 µs DUTY CYCLE = 2%MAX

VGS = -1.8 V

= -2.5 V

NORMALIZED

2.5

VGS = -1.5 V

2.0

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0123456

VGS = -3 V

-I

DRAIN CURRENT (A)

= -3.5 V

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

DRAIN TO

DS(on)

0.28

)

Ω

0.24

(

0.20

0.16

0.12

0.08

SOURCE ON-RESISTANCE

0.04 0246810

-V

GATE TO SOURCE VOLTAGE (V)

Figure 4.

On-Res istance vs Gate to

PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX

ID = -1.5 A

TJ = 125 oC

TJ = 25 oC

Source Voltage

= -2 V

= -4.5 V

MOSFET and Schottky Diode

PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX

, DRAIN CURRENT (A)

-I

0 0.5 1.0 1.5 2.0 2.5

Figure 5. Transfer Characteristics

FDFMA2P853T Rev.B1

= -5 V

TJ = 125 oC

-VGS, GATE TO SOURCE V OLTAGE (V)

TJ = 25 oC

TJ = -55 oC

= 0 V

TJ = 125 oC

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

-I

0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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FDFMA2P853T Integrated P-Channel PowerTrench

Typical Characteristics T

ID = -3.0 A

VDD = -5 V

, GATE TO SOURCE VOLTAGE (V)

-V

012345

Qg, GATE CHARGE (nC)

Figure 7.

0.1

, DRAIN CURRENT (A)

-I

0.01

0.1 1 10

Gate Charge Characteristics Figure 8.

THIS A REA IS LIMITED BY r

SINGLE PULSE T

Figure 9.

DS(on)

= MAX RATED

= 173 oC/W

= 25 oC

-VDS, DRAIN to SOURCE VOLTAGE (V)

Forward Bias Safe

Operating Area

= 25 °C unless otherwise noted

VDD = -10 V

= -15 V

100 us

1 ms

10 ms

100 ms

1 s

10 s

700

600

500

iss

400

300

200

CAPACITANCE (pF)

oss

100

rss

048121620

-VDS, DRAIN TO SOURCE VO LTAGE (V)

f = 1 MHz

= 0 V

Capacitance vs Drain

to Source Voltage

0.1

0.01

FORWARD CURRENT (A)

0.001

00.20.40.60.8

Figure 10.

TJ = 125 oC

TJ = 25 oC

FORWARD VOLTAGE (V)

Schottky Diode Foward Voltage

MOSFET and Schottky Diode

0.1

0.01

REVERSE LEAKAGE CURRENT (mA)

0.001 048121620

Figure 11.

FDFMA2P853T Rev.B1

200 100

TJ = 125 oC

REVERSE VOLTAGE (V)

TJ = 85 oC

TJ = 25 oC

PEAK TRANSIENT POWER (W)

)

(

0.5 10-410-310-210

Schottky Diode Reverse Current Figure 12.

VGS = -10 V

SINGLE PULSE

= 173 oC/W

= 25 oC

-1

t, PULSE WIDTH (sec)

110

100 1000

Sin gle Pu l se Ma ximum

Power Dissipation

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Page 6

FDFMA2P853T Integrated P-Channel PowerTrench

Typical Characteristics T

0.1

IMPEDANCE,

NORMALIZED THERMAL

0.01 10

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

-3

Figure 13. Junction to Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

SINGLE PULSE R

= 173 oC/W

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

110

+ T

θJA

100 1000

MOSFET and Schottky Diode

FDFMA2P853T Rev.B1

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Page 7

Dimensional Outline and Pad Layout

FDFMA2P853T Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

FDFMA2P853T Rev.B1

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Page 8

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Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™ F-PFS™

* EZSWITCH™ and FlashWriter

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® ®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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™

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UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDFMA2P853T Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Counterfeiting of semiconductor parts is a growing prob lem in the indust ry. All manufactur es of semiconductor product s are experiencin g counterfeiting of their parts. Customers who inadvertently purchase count erfeit par ts experience many problems such as loss of brand reputation, substandard perfor mance, failed application, and increased cost of production and man ufacturing delays. Fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. Farichild stro ngly encourage s customers t o purchase Farichild par ts either dire ctly from Fairchil d or from Authorized Fa irchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers t o do their part in st opping this practice by buying direct or from authorized distrib utors.

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Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications f or product development. S pecifications may change in any manner without notice.

Datasheet contains preliminary data; sup plementary dat a will be pu blished at a lat er date. Fairchild Semiconductor reserves the right to make ch anges at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I37

www.fairchildsemi.comFDFMA2P853T Rev.B1