Datasheet fdfma2p853 Datasheet

Page 1

September 2008

FDFMA2P853

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

General Description Features

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physical size and is well suited to linear mode applications.

MOSFET:

 -3.0 A, -20V. R

= 120 m: @ VGS = -4.5 V

DS(ON)

= 160 m: @ VGS = -2.5 V

DS(ON)

= 240 m: @ VGS = -1.8 V

DS(ON)

Schottky:

VF < 0.46 V @ 500 mA

 Low Profile - 0.8 mm maximun - in the new package

MicroFET 2x2 mm

 RoHS Compliant

NC D

FDFMA2P853 Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

C D

MicroFET

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

RRM

, T

STG

MOSFET Drain-Source Voltage -20 V

MOSFET Gate-Source Voltage r8V

Drain Current -Continuous (Note 1a)

-Pulsed

Schottky Repetitive Peak Reverse voltage 30V

Schottky Average Forward Current (Note 1a) 1 A

Power dissipation for Single Operation (Note 1a) Power dissipation for Single Operation (Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

-3.0

-6

1.4

0.7

Thermal Characteristics

TJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 86

Thermal Resistance, Junction-to-Ambient (Note 1b) 173

Thermal Resistance, Junction-to-Ambient (Note 1c) 86

Thermal Resistance, Junction-to-Ambient (Note 1d) 140

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.853 FDFMA2P853 7inch 8mm 3000 units

C/W

Page 2

FDFMA2P853 Integrated P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

'BVDSS 'T

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA

GSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

= 0 V, ID = –250 PA

= –250 PA, Referenced to 25qC

–20 V

–12

mV/qC

On Characteristics (Note 2)

Gate Threshold Voltage

GS(th)

'VGS(th) 'T

DS(on)

On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A

D(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = –250 PA

= –250 PA, Referenced to 25qC

VGS = –4.5 V, ID = –3.0 A V

= –2.5 V, ID = –2.5 A

= –1.8 V, ID = –1.0 A

= –4.5 V, ID = –3.0 A, TJ=125qC

gFS Forward Transconductance VDS = –5 V, ID = –3.0 A 7 S

–0.4 –0.7 –1.3 V

120 160 240 160

mV/qC

90 120 172 118

Dynamic Characteristics

Input Capacitance 435 pF

iss

Output Capacitance 80 pF

oss

Reverse Transfer Capacitance

rss

= –10 V, V

f = 1.0 MHz

= 0 V,

45 pF

Switching Characteristics (Note 2)

Turn–On Delay Time 9 18 ns

d(on)

tr Turn–On Rise Time 11 19 ns

Turn–Off Delay Time 15 27 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 4 6 nC

Qgs Gate–Source Charge 0.8 nC

Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

= –4.5 V, R

= –10 V, ID = –3.0 A,

= –4.5 V

GEN

= 6 :

6 12 ns

0.9 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.1 A

VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time 17 ns

Qrr Diode Reverse Recovery Charge

= 0 V, IS = –1.1 A (Note 2) –0.8 –1.2 V

= –3.0 A,

/dt = 100 A/µs

6 nC



MOSFET and Schottky Diode

Schottky Diode Characteristics

IR Reverse Leakage VR= 5 V

IR Reverse Leakage VR= 20 V

VF Forward Voltage IF= 500mA

VF Forward Voltage IF= 1A

2 FDFMA2P853 Rev D2 (W)

= 25qC

= 125qC

= 25qC

= 85qC

= 125qC

= 25qC

= 125qC

= 25qC

= 125qC

9.9

2.35010

9.9

100

0.3

2.3

0.4

0.5

0.3

0.49

0.46

0.35

0.55

0.54

PA mA mA

Page 3

FDFMA2P853 Integrated P-Channel PowerTrench

Electrical Characteristics T

Notes:

1. R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

design while R

(a) MOSFET R

(b) MOSFET R

(d) Schottky R

Scale 1: 1 on letter size paper

2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%

is determined by the user's board design.

TJA

= 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB

TJA

= 173°C/W when mounted on a minimum pad of 2 oz copper

TJA

= 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB

TJA

= 140°C/W when mounted on a minimum pad of 2 oz copper

TJA

C/W

a) 86 when mounted

on a 1in pad of 2 oz copper

= 25°C unless otherwise noted

C/W

b) 173 when mounted on a minimum pad of 2 oz copper

c) 86oC/W when mounted on a 1in pad of 2 oz copper

is guaranteed by

TJC

C/W

d) 140 when

mounted on a minimum pad of 2 oz copper

MOSFET and Schottky Diode

FDFMA2P853 Rev. D2 (W)3

Page 4

Typical Characteristics

FDFMA2P853 Integrated P-Channel PowerTrench

VGS = -4.5V

, DRAIN CURRENT (A)

-I

00.511.522.5

Figure 1.

1.4

ID = -3.0A

= -4.5V

1.3

1.2

1.1

, NORMALIZ ED

DS(ON)

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 5 0 75 100 125 150

-2.5V

-3.0V-3.5V

-V

, DRAIN-SOURCE VOLTAGE (V)

-2.0V

-1.8V

-1.5V

On-Region Characteristics Figure 2.

, JUNCTI ON TEMPERATURE (oC)

VGS= -1.5V

2.6

2.2

1.8

-1.8V

, NORMALIZED

1.4

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

0.6 0123456

-2.0V

-I

, DRAIN CURRENT (A)

-2.5V

-3.0V

-3.5V

-4.5V

On-Resistance Variation with

Drain Current and Gate Voltage

0.28

ID = -1.5A

0.22

0.16

, ON-RESIS TANCE (OHM)

0.1

TA = 25oC

DS(ON)

0.04 0246810

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

MOSFET and Schottky Diode

Figure 3.

On-Resistance Variation with

Temperature

VDS = -5V

, DRAIN CURRENT ( A)

-I

0 0.5 1 1.5 2 2.5

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

-55oC

25oC

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance Variation with

Gate-to-Source Voltage

VGS = 0V

0.1

TA= 125oC

0.01

0.001

, REVERSE DRAIN CURRENT ( A)

-I

0.0001

0 0.2 0.4 0.6 0.8 1 1. 2

-V

Figure 6.

Body Diode Forward Voltage Variation

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

with Source Current and Temperature

FDFMA2P853 Rev. D2 (W)4

Page 5

Typical Characteristics

FDFMA2P853 Integrated P-Channel PowerTrench

ID = -3.0A

, GATE-SOURCE VOLTAGE (V)

-V

012345

Figure 7.

0.1

0.01

, FORWARD LEAKAGE CURRENT(A)

0.001 0 0.1 0.2 0.3 0.4 0. 5 0.6 0.7 0.8

Gate Charge Characteristics Figure 8.

TJ = 125oC

VDS = -5V

-10V

, GATE CHARGE (nC)

TJ = 25oC

VF, FORWARD VOLTAGE (V)

-15V

700

600

500

400

300

CAPACITANC E (pF)

200

100

0 4 8 121620

oss

rss

-V

, DRAIN TO SOURCE VOLTAGE (V)

iss

f = 1MHz

= 0 V

Capacitance Characteristics

0.01

0.001

0.0001

0.00001

, REVERSE LEAKAGE CURRENT ( A)

0.000001 0 5 10 15 20

VR, REVERSE VOLTAGE (V)

TJ = 125oC

TJ = 85oC

TJ = 25oC

MOSFET and Schottky Diode

Figure 9.

Schottky Diode Forward Voltage Figure 10.

Figure 11.

Transient Thermal Response Curve

Schottky Diode Reverse Current

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDFMA2P853 Rev. D2 (W)5

Page 6

Dimensional Outline and Pad Layout

FDFMA2P853 Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

rev3

FDFMA2P853 Rev. D2 (W)6

Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter

® ®

FPS™

* EZSWITCH™ and FlashWriter

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

PowerTrench Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

™

The Power Franchise

TinyBoost™

TinyBuck™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

FDFMA2P853 Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

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As used herein:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I36

FDFMA2P853 Rev. D2 (W)7