Page 1
March 2008
FDFMA2P029Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20V, –3.1A, 95m:
Features
MOSFET
Max r
Max r
HBM ESD protection level > 2.5kV (Note 3)
Schottky
VF < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Co
= 95m: at VGS = –4.5V, ID = –3.1A
DS(on)
= 141m: at VGS = –2.5V, ID = –2.5A
DS(on)
mpliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
formance for its physical size and is well suited to linear mode
per
applications.
FDFMA2P029Z Integrated P-Channel PowerTrench
Pin 1
D
NC
A
C
A
1
2
NC
D
3
MicroFET 2X2
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
V
I
P
T
V
I
DS
GS
D
D
J
RRM
O
, T
STG
Drain to Source Voltage –20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous (Note 1a) –3.1
-Pulsed -6
Power Dissipation (Note 1a) 1.4
(Note 1b) 0.7
Operating and Storage Junction Temperature Range –55 to +150 °C
Schottky Repetitive Peak Reverse Voltage 20 V
Schottky Average Forward Current 2 A
C
= 25°C unless otherwise noted
A
S
G
6
5
G
4
S
Thermal Characteristics
®
MOSFET and Schottky Diode
A
W
R
TJA
R
TJA
R
TJA
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 86
Thermal Resistance, Junction to Ambient (Note 1b) 173
Thermal Resistance, Junction to Ambient (Note 1c) 86
Thermal Resistance, Junction to Ambient (Note 1d) 140
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
.P29 FDFMA2P029Z MicroFET 2X2 7” 8mm 3000 units
©2008 Fairchild Semiconductor Corporation
FDFMA2P029Z Rev.B1
°C/W
1
www.fairchildsemi.com
Page 2
FDFMA2P029Z Integrated P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = –16V, V
Gate to Source Leakage Current VGS = ±12V, V
I
= –250PA, referenced to 25°C –12 mV/°C
D
= 0V –1 PA
GS
= 0V ±10 PA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.6 –1.0 –1.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On-Resistance
Forward Transconductance VDS = –10V, ID = –3.1A –11 S
= –250PA, referenced to 25°C 4 mV/°C
I
D
V
= –4.5V, ID = –3.1A 60 95
GS
= –2.5V, ID = –2.5A 88 141
GS
= –4.5V, ID = –3.1A,TJ =125°C 87 140
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 120 160 pF
Reverse Transfer Capacitance 100 150 pF
V
= –10V, VGS = 0V,
DS
f = 1MHz
540 720 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 37 59 ns
VDD = –10V, ID = –1A
= –4.5V, R
V
GS
GEN
= 6:
Fall Time 36 58 ns
Total Gate Charge
Gate to Source Gate Charge 1.1 nC
V
= –10V, ID = –3.1A
DD
= –4.5V
V
GS
Gate to Drain “Miller” Charge 2.4 nC
13 24 ns
710nC
m:V
®
MOSFET and Schottky Diode
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current –1.1 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 9 nC
= 0V, IS = –1.1A (Note 2) –0.8 –1.2 V
GS
= –3.1A, di/dt = 100A/Ps
I
F
Schottky Diode Characteristics
V
R
I
R
V
F
FDFMA2P029Z Rev.B1 2
Reverse Voltage IR = 1mA TJ = 25°C 20 V
Reverse Leakage VR = 20V
I
= 500mA
F
Forward Voltage
= 1A
I
F
25 ns
T
= 25°C 30 300 PA
J
= 125°C 10 45 mA
T
J
T
= 25°C 0.32 0.37
J
= 125°C 0.21 0.26
T
J
T
= 25°C 0.37 0.435
J
= 125°C 0.28 0.33
T
J
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V
Page 3
Notes:
1: R
is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
user's board design.
(a) MOSFET R
(b) MOSFET R
(c) Schottky R
(d) Schottky R
= 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
TJA
= 173°C/W when mounted on a minimum pad of 2 oz copper
TJA
= 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
TJA
= 140oC/W when mounted on a minimum pad of 2 oz copper.
TJA
is guaranteed by design while R
TJC
is determined by the
TJA
FDFMA2P029Z Integrated P-Channel PowerTrench
o
C/W
a)86oC/W
when mounted
2
on a 1in
pad of
2 oz copper.
2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
b)173
when mounted
on a minimum
pad of 2 oz
copper.
o
c)86
C/W when
mounted on a
2
1in
pad of 2 oz
copper.
o
C/W
d)140
when mounted
on a minimum
pad of 2 oz
copper.
®
MOSFET and Schottky Diode
FDFMA2P029Z Rev.B1 3
www.fairchildsemi.com
Page 4
FDFMA2P029Z Integrated P-Channel PowerTrench
Typical Characteristics T
6
5
4
3
2
, DRAIN CURRENT (A)
D
-I
1
0
0.00.51.01.52.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
1.6
1.4
1.2
On Region Characteristics Figure 2.
ID = -3.1A
= -4.5V
V
GS
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
= 25°C unless otherwise noted
J
VGS = -2.0V
VGS = -1.5V
NORMALIZED
, DRAIN TO
r
2.6
2.2
1.8
1.4
1.0
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
DRAIN TO SOURCE ON-RESISTANCE
0.6
0123456
VGS =-2.0V
VGS = -3.5V
-ID, DRAIN CURRENT(A)
VGS = -2.5V
VGS = -3.0V
VGS = -4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
DS(on)
200
(m:)
160
120
80
SOURCE ON-RESISTANCE
40
0246810
Figure 4.
ID = -1.55A
o
T
= 25
C
J
-VGS, GATE TO SOURCE VOLTAGE (V)
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
TJ = 125oC
Source Voltage
®
MOSFET and Schottky Diode
6
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
5
VDD= -5V
4
3
2
, DRAIN CURRENT (A)
D
-I
1
0
0.0 0.5 1.0 1.5 2.0 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 125oC
TJ = -55oC
TJ = 25oC
Figure 5. Transfer Characteristics
4
FDFMA2P029Z Rev.B1
10
V
= 0V
GS
1
TJ = 125oC
0.1
TJ = 25oC
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
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Page 5
FDFMA2P029Z Integrated P-Channel PowerTrench
Typical Characteristics T
10
I
= -3.1A
DD
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
-V
02468101214
Qg, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics Figure 8.
20
10
r
LIMIT
DS(on)
1
VGS=-4.5V
0.1
SINGLE PULSE
, DRAIN CURRENT (A)
D
-I
0.01
0.1 1 10
o
=173
C/W
R
TJA
o
T
= 25
C
A
-VDS, DRAIN to SOURCE VOLTAGE (V)
F ig ur e 9. Fo rw ar d B i as Sa f e
Operating Area
V
DD
= 25°C unless otherwise noted
J
= -5V
VDD = -15V
VDD = -10V
100us
1ms
10ms
100ms
1s
10s
DC
60
1000
C
iss
C
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
50
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
oss
C
rss
20
Capacitance Characteristics
50
40
30
20
10
), PEAK TRANSIENT POWER (W)
PK
0
P(
10-410-310-210-110010110210
Figure 10.
SINGLE PULSE
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
SINGLE PULSE
R
= 173oC/W
TJA
T
=25oC
A
®
MOSFET and Schottky Diode
3
Power Dissipation
10
1
0.1
0.01
FORWARD CURRENT(A)
F,
I
0.001
0 200 400 600 800
Figure 11.
FDFMA2P029Z Rev.B1
100
TJ = 125oC
10
1
TJ = 85oC
TJ = 25oC
VF, FORWARD VOLTAGE(mV)
0.1
0.01
, REVERSE LEAKAGE CURRENT (mA)
0.001
R
I
0 5 10 15 20 25 30
Schottky Diode Forward Voltage Figure 12.
5
TJ = 125oC
TJ = 85oC
TJ = 25oC
VR, REVERSE VOLTAGE (V)
Schottky Diode Reverse Current
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Page 6
FDFMA2P029Z Integrated P-Channel PowerTrench
Typical Characteristics T
2
1
TJA
0.1
IMPEDANCE, Z
NORMALIZED THERMAL
0.01
0.005
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
-3
10
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
0
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
TJA
TJA
A
1
2
10
3
10
®
MOSFET and Schottky Diode
FDFMA2P029Z Rev.B1
6
www.fairchildsemi.com
Page 7
Dimensional Outline and Pad Layout
FDFMA2P029Z Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
FDFMA2P029Z Rev.B1
rev3
7
www.fairchildsemi.com
Page 8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
®
tm
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FlashWriter
®
*
®
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise
tm
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
FDFMA2P029Z Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDFMA2P029Z Rev.B1 8
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