Page 1
August 2005
FDFM2P110
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
FDFM2P110 Integrated P-Channel PowerTrench
General Description
FDFM2P110 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
Applications
Buck Boost
Features
-3.5 A, -20 V R
R
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
DS(ON)
DS(ON)
= 140mΩ @ V
= 200mΩ @ V
= -4.5 V
GS
= -2.5 V
GS
PIN 1
ASSG
1
A
TOP
C/D
A
BOTTOM
D
2
S
3
G
MLP 3x3
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
V
I
V
I
P
T
DSS
GSS
D
RRM
O
D
J
, T
STG
Drain-Source Voltage -20 V
Gate-Source Voltage ±12 V
Drain Current -Continuous (Note 1a) -3.5
-Pulsed -10
Schottky Repetitive Peak Reverse voltage 20 V
Schottky Average Forward Current (Note 1a) 2 A
Power dissipation (Steady State) (Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
= 25°C unless otherwise noted
A
2
0.8
®
MOSFET and Schottky Diode
6
A
5
S
4
D
A
W
o
C
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 60
Thermal Resistance, Junction-to-Ambient (Note 1b) 145
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
2P110 FDFM2P110 7inch 12mm 3000 units
©2005 Fairchild Semiconductor Corporation FDFM2P110 Rev. C4 (W)1
o
C/W
o
C/W
Page 2
FDFM2P110 Integrated P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(TH)
∆V
GS(TH)
∆T
J
R
DS(ON)
I
D(ON)
g
FS
Drain-Source Breakdown Voltage ID = -250µA, VGS = 0V -20 - - V
Breakdown Voltage Temperature
Coefficient
ID = -250µA,
Referenced to 25°C
- -11 - mV/°C
Zero Gate Voltage Drain Current VGS = 0V, VDS = -16V - - -1 µA
Gate-Body Leakage, VGS = ±12V, VDS = 0V - - ±100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250µA -0.6 -1.0 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
On-State Drain Current VGS = -2.5V, VDS = -5V -10 - - A
Forward Transconductance ID = -3.5A, VDS = -5V - 6 - S
ID = -250µA,
Referenced to 25°C
- 3 - mV/°C
ID = -3.5A, VGS = -4.5V - 101 140
ID = -3.0A, VGS = -2.5V - 145 200
ID = -3.5A, VGS = -4.5V,
TJ = 125°C
- 136 202
Dynamic Characteristics
C
C
C
R
ISS
OSS
RSS
G
Input Capacitance
Output Capacitance - 65 - pF
Reverse Transfer Capacitance - 35 - pF
VDS = -10V, VGS = 0V,
f = 1MHz
- 280 - pF
Gate Resistance f = 1MHz - 7 - Ω
mΩ
®
MOSFET and Schottky Diode
Switching Characteristics (Note 2)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time - 12 22 ns
Turn-Off Delay Time - 11 20 ns
VDD = -10V, ID = -1A
VGS = -4.5V, R
GEN
= 16Ω
Turn-Off Fall Time - 3.2 6.4 ns
Total Gate Charge
Gate-Source Charge - 0.7 - nC
Gate-Drain Charge - 1 - nC
VDS = -10V, ID = -3.5A,
VGS = -4.5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current - - -2 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = -2 A (Note 2) - -0.9 -1.2 V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge - 3 - nC
IF= -3.5A, dIF/dt=100A/µs
Schottky Diode Characteristic
V
R
I
R
V
F
Reverse Voltage IR = 1mA 20 - - V
Reverse Leakage VR = 5V
TJ = 25°C
TJ = 100°C 10 mA
Forward Voltage IF = 1A TJ = 25°C - 0.32 0.39 V
- 8 16 ns
- 3 4 nC
- 13 - ns
- -
100 µA
FDFM2P110 Rev. C4 (W)2
Page 3
FDFM2P110 Integrated P-Channel PowerTrench
Electrical Characteristics T
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
θJA
defined as the solder mounting surface of the drain pins. R
user's board design.
a) 60oC/W when mounted on
a 1in
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
= 25°C unless otherwise noted
A
is guaranteed by design while R
θCA
2
pad of 2 oz copper
is determined by the
θCA
o
C/W whe mounted on
b) 145
a minimum pad of 2 oz
copper
Scale 1: 1 on letter size paper
®
MOSFET and Schottky Diode
FDFM2P110 Rev. C4 (W)3
Page 4
Typical Characteristics
5
V
0
V
V
0
5
5
5oC
C
2
FDFM2P110 Integrated P-Channel PowerTrench
10
VGS = -4.5V
8
6
4
, DRAIN CURRENT (A)
D
-I
2
0
01234
Figure 1.
1.6
ID = -3.5A
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON- RESISTANCE
0.6
-50-250 25507510012515
-3.5V
-3.0V
-2.5
-2.0V
-VDS, DRAIN-SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
= -4.5V
TJ, JUNCTION TEMPERATURE (oC)
2.4
2.2
2
VGS = -2.5V
1.8
1.6
, NORMALIZED
1.4
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
024681
-3.0
-3.5
-ID, DRAIN CURRENT ( A)
-4.0V
-4.5V
On-Resistance Variation with
Drain Current and Gate Voltage
0.44
0.4
0.36
0.32
0.28
0.24
0.2
, ON-RESISTANCE (OHM)
0.16
DS(ON)
R
0.12
0.08
1234
TA = 25oC
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
ID = -1.8A
®
MOSFET and Schottky Diode
Figure 3.
On-Resistance Variation with
Temperature
8
VDS = -5V
TA = -55oC 2
6
o
125
4
, DRAIN CURRENT (A)
D
2
-I
0
0.5 1 1.5 2 2.5 3 3.
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance Variation with
Gate-to-Source Voltage
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0.20.40.60.8 1 1.
Figure 6.
TA = 125oC
25oC
-55oC
-VSD, BODY DIODE FORWARD VOLTAGE ( V)
Body Diode Forward Voltage Variation
with Source Current and Temperature
FDFM2P110 Rev. C4 (W)4
Page 5
4
0
8
0
Typical Characteristics
FDFM2P110 Integrated P-Channel PowerTrench
5
ID = -3.5A
4
3
2
1
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
0123
Figure 7.
10
TJ = 125oC
1
0.1
0.01
, FORWARD LEAKAGE CURRENT (A)
F
I
0.001
0 0.1 0.2 0.3 0.4 0.5 0. 6 0.7 0.
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
VF, FORWARD VOLTAGE ( V)
VDS = -5V
-15V
TJ = 25oC
-10V
500
400
C
300
200
C
CAPACITANCE (pF)
100
0
oss
C
rss
0 4 8 12162
iss
-VDS, DRAIN TO SOURCE VOLTAGE (V)
f = 1MHz
= 0 V
V
GS
Capacitance Characteristics
0.1
TJ = 125oC
TJ = 100oC
TJ = 25oC
VR, REVERSE VOLTAGE (V)
0.00001
, REVERSE LEAKAGE CURRENT (A)
R
I
0.000001
0.01
0.001
0.0001
0 5 10 15 2
®
MOSFET and Schottky Diode
Figure 9.
Schottky Diode Forward Voltage Figure 10.
Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFM2P110 Rev. C4 (W)5
Page 6
FDFM2P110 Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
FDFM2P110 Rev. C4 (W)6
Page 7
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FDFM2P110 Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
FDFM2P110 Rev. C4 (W)7
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