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FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Features
Max r
Max r
Low gate charge: Q
Low gate resistance
= 5.7mΩ at V
DS(on)
= 8.0mΩ at V
DS(on)
= 10V, ID = 35A
GS
= 4.5V, ID = 35A
GS
= 37nC(Typ), VGS = 10V
g(10)
March 2006
E
E
R
F
D
A
E
L
FDD8796/FDU8796 N-Channel PowerTrench
I
M
P
L
E
M
E
N
T
A
T
I
O
N
Application
Vcore DC-DC for Desktop Computers and Servers
Avalanche rated and 100% tested
RoHS Compliant
VRM for Intermediate Bus Architecture
G
G
MOSFET Maximum Ratings T
D
DS
= 25°C unless otherwise noted
C
I-PAK
(TO-251AA)
Short Lead I-PAK
S
G
Symbol Parameter Ratings Units
V
DS
V
GS
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
I
D
-Pulsed (Note 1) 305
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 2) 91 mJ
Power Dissipation 88 W
Operating and Storage Temperature -55 to 175 °C
Thermal Characteristics
D
®
MOSFET
S
A -Continuous (Die Limited) 98
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO_252, TO_251 1.7 °C/W
Thermal Resistance, Junction to Ambient TO_252, TO_251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8796 FDD8796 TO-252AA 13’’ 12mm 2500 units
FDU8796 FDU8796 TO-251AA N/A (Tube) N/A 75 units
FDU8796 FDU8796_F071 TO-251AA N/A (Tube) N/A 75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. B
www.fairchildsemi.com1
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Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
VDSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25
°C
VDS = 20V
V
= 0V TJ = 150°C
GS
7 mV/°C
1
250
Gate to Source Leakage Current VGS = ±20V ±100 nA
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.8 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
ID = 250µA, referenced to
25
°C
-6.7 mV/°C
VGS = 10V, ID = 35A 4.5 5.7
VGS = 4.5V, ID = 35A 6.0 8.0
V
= 10V, ID = 35A
DS
TJ = 175°C
6.9
9.5
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 455 605 pF
Reverse Transfer Capacitance 315 475 pF
VDS = 13V, VGS = 0V,
f = 1MHz
1960 2610 pF
Gate Resistance f = 1MHz 1.1 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 24 39 ns
Turn-Off Delay Time 99 158 ns
VDD =13V, ID = 35A
VGS = 10V, RGS = 20Ω
10 20 ns
Fall Time 57 91 ns
Total Gate Charge VGS = 0 to10V
Total Gate Charge VGS = 0 to 5V 19 27 nC
Gate to Source Gate Charge 6 nC
Gate to Drain Charge 6 nC
VDD =13V,
ID = 35A,
Ig = 1.0mA
37 52 nC
Drain-Source Diode Characteristics
V
= 0V, IS = 35A 0.9 1.25 V
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Source to Drain Diode Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs 30 45 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 23 35 nC
= 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
J
GS
V
= 0V, IS = 15A 0.8 1.0 V
GS
FDD8796/FDU8796 N-Channel PowerTrench
µA
mΩ
®
MOSFET
FDD8796/FDU8796 Rev. B
2 www.fairchildsemi.com
Page 3
FDD8796/FDU8796 N-Channel PowerTrench
Typical Characteristics T
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
01234
VGS = 10V
V
GS
V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
ID = 35A
= 10V
V
1.6
GS
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 4.5V
= 3.5V
= 25°C unless otherwise noted
J
V
= 3V
GS
NORMALIZED
Figure 2. Normalized
, ON-RESISTANCE (mΩ)
DS(on)
r
4.0
3.5
V
= 3V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
2.5
2.0
1.5
1.0
0.5
DRAIN TO SOURCE ON-RESISTANCE
0 10203040506070
ID, DRAIN CURRENT(A)
V
= 3.5V
GS
VGS = 4.5V
VGS = 10V
On-Resistance vs Drain
Current and Gate Voltage
14
ID =35A
12
10
8
6
4
2
246810
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 175oC
TJ = 25oC
®
MOSFET
Figure 3.
Normalized On Resistance vs Junction
70
PULSE DURATION = 80µs
60
DUTY CYCLE = 0.5%MAX
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDD8796/FDU8796 Rev. B
Temperature
TJ = 175oC
TJ = 25oC
TJ = -55oC
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
V
= 0V
GS
10
TJ = 175oC
1
0.1
TJ = -55oC
TJ = 25oC
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.3 0.6 0.9 1.2
Figure 6.
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Dr ain Diode Forward
Voltage vs Source Current
3 www.fairchildsemi.com
Page 4
FDD8796/FDU8796 N-Channel PowerTrench
Typical Characteristics T
10
8
V
= 10V
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
010203040
Figure 7.
50
10
DD
VDD = 16V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 25oC
TJ = 125oC
= 25°C unless otherwise noted
J
VDD = 13V
CAPACITANCE (pF)
4000
C
iss
1000
f = 1MHz
V
= 0V
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
Capacitance vs Drain to Source Voltage
100
80
60
40
VGS = 4.5V
VGS = 10V
30
®
MOSFET
, AVALANCHE CURRENT(A)
AS
I
1
TJ = 150oC
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
1000
100
10
, DRAIN CURRENT (A)
D
I
Figure 11.
LIMITED BY
PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
110
DS(on)
VDS, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
= MAX RATED
T
J
o
T
= 25
C
C
Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
100us
1ms
10ms
DC
10us
300
40
, DRAIN CURRENT (A)
20
D
I
0
25 50 75 100 125 150 175
Figure 10.
10000
1000
100
), PEAK TRANSIENT POWER (W)
PK
50
P(
10-510-410-310-210-110010
o
R
= 1.7
C/W
θJC
TC, CASE TEMPERATURE(oC)
Maximum Continuous Drain Current vs
Case Temperature
V
= 10V
GS
SINGLE PULSE
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
o
I = I
25
C DERATE PEAK
175 TC–
-----------------------
150
ABOVE 25
CURRENT AS FOLLOWS:
Dissipation
1
FDD8796/FDU8796 Rev. B
4 www.fairchildsemi.com
Page 5
FDD8796/FDU8796 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESENDING ORDER
1
D = 0.5
0.2
0.1
θJC
0.05
0.1
0.02
0.01
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
1E-3
SINGLE PULSE
-5
10
-4
10
Figure 13.
= 25°C unless otherwise noted
J
-3
10
-2
10
t, RECTANGULAR PULSE DURATION(s)
Transient Thermal Response Curve
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
P
θJC
DM
t
1
t
2
1/t2
x R
+ T
θJC
C
0
10
1
10
®
MOSFET
FDD8796/FDU8796 Rev. B
5 www.fairchildsemi.com
Page 6
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
FDD8796/FDU8796 N-Channel PowerTrench
®
MOSFET
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
FDD8796/FDU8796 Rev. B www.fairchildsemi.com6
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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