Page 1
FDD8780/FDU8780
N-Channel PowerTrench® MOSFET
25V, 35A, 8.5mΩ
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Features
Max r
Max r
Low gate charge: Q
Low gate resistance
= 8.5mΩ at V
DS(on)
= 12.0mΩ at V
DS(on)
= 10V, ID = 35A
GS
= 4.5V, ID = 35A
GS
= 21nC(Typ), VGS = 10V
g(10)
March 2006
E
E
R
F
D
A
E
L
FDD8780/FDU8780 N-Channel PowerTrench
I
M
P
L
E
M
E
N
T
A
T
I
O
N
Application
Vcore DC-DC for Desktop Computers and Servers
Avalanche rated and 100% tested
RoHS Compliant
VRM for Intermediate Bus Architecture
G
G
MOSFET Maximum Ratings T
DS
I-PAK
(TO-251AA)
= 25°C unless otherwise noted
C
D
S
Short Lead I-PAK
G
Symbol Parameter Ratings Units
V
DS
V
GS
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
I
D
-Pulsed (Note 1) 224
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 2) 73 mJ
Power Dissipation 50 W
Operating and Storage Temperature -55 to 175 °C
Thermal Characteristics
D
®
MOSFET
S
A -Continuous (Die Limited) 60
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8780 FDD8780 TO-252AA 13’’ 12mm 2500 units
FDU8780 FDU8780 TO-251AA N/A(Tube) N/A 75 units
FDU8780 FDU8780_F071 TO-251AA N/A(Tube) N/A 75 units
©2006 Fairchild Semiconductor Corporation
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com1
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Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
∆T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25
°C
VDS = 20V,
V
GS
= 0V
TJ = 150°C 250
12 mV/°C
1
Gate to Source Leakage Current VGS = ±20V ±100 nA
FDD8780/FDU8780 N-Channel PowerTrench
µA
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.8 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 265 355 pF
Reverse Transfer Capacitance 180 270 pF
Gate Resistance f = 1MHz 0.9 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 9 18 ns
Turn-Off Delay Time 43 69 ns
Fall Time 24 38 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Gate Charge 3.5 nC
Gate to Drain “Miller”Charge 4.7 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs 28 42 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 20 30 nC
= 25oC, L = 0.3mH, IAS = 22A ,VDD = 23V, VGS = 10V.
J
ID = 250µA, referenced to
25
°C
-6.3 mV/°C
VGS = 10V, ID = 35A 6.5 8.5
VGS = 4.5V, ID = 35A 9.1 12.0
VGS = 10V, ID = 35A
TJ = 175°C
VDS = 13V, VGS = 0V,
10.4 15.0
1080 1440 pF
f = 1MHz
7 14 ns
VDD = 13V, ID = 35A
VGS = 10V, RGS = 17Ω
= 0V to 10V
GS
= 0V to 5V 11. 2 16 nC
GS
V
= 0V, IS = 35A 0.92 1.25
GS
V
= 0V, IS = 15A 0.84 1.0
GS
VDD = 13V
I
= 35A
D
Ig = 1.0mA
21 29 nC
mΩ
®
MOSFET
V
FDD8780/FDU8780 Rev. B
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Page 3
FDD8780/FDU8780 N-Channel PowerTrench
Typical Characteristics T
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
01234
VGS = 10V
V
= 4.5V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
Figure 1. On Region Characteristics
1.8
ID = 35A
= 10V
V
GS
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
VGS = 3.5V
V
GS
= 3V
7
V
= 3V
GS
6
5
4
3
NORMALIZED
2
1
0
DRAIN TO SOURCE ON-RESISTANCE
0 10203040506070
ID, DRAIN CURRENT(A)
Figure 2. Normalized
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3.5V
VGS = 4.5V
VGS = 10V
On-Resistance vs Drain
Current and Gate Voltage
40
30
20
, ON-RESISTANCE (mΩ)
10
DS(on)
r
0
3.0 4.5 6.0 7.5 9.0
ID = 35A
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 175oC
TJ = 25oC
®
MOSFET
10
Figure 3.
, DRAIN CURRENT (A)
D
I
Normalized On Resistance vs Junction
70
PULSE DURATION = 80µs
60
DUTY CYCLE = 0.5%MAX
50
40
30
20
10
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDD8780/FDU8780 Rev. B
Temperature
TJ = 175oC
TJ = 25oC
TJ = -55oC
Figure 4.
On-Resistance vs Gate to Source
Voltage
200
100
V
= 0V
GS
10
TJ = 175oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.00.20.40.60.81.01.21.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode Fo rw ard
TJ = 25oC
TJ = -55oC
Voltage vs Source Current
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Page 4
FDD8780/FDU8780 N-Channel PowerTrench
Typical Characteristics T
J
10
V
= 10V
8
6
4
DD
VDD = 13V
VDD = 16V
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
0 5 10 15 20 25
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
50
TJ = 25oC
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
TJ = 150oC
tAV, TIME IN AVALANCHE(ms)
= 25°C unless otherwise noted
4000
1000
CAPACITANCE (pF)
100
70
60
50
40
TJ = 125oC
300
30
20
, DRAIN CURRENT (A)
D
I
10
C
iss
C
C
rss
oss
f = 1MHz
= 0V
V
GS
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
V
= 10V
GS
V
= 4.5V
GS
R
= 3.0oC/W
θJC
0
25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE(oC)
30
®
MOSFET
Figure 9.
Unclamped Inductive Switching
500
100
10
LIMITED BY
PACKAGE
1
OPERATION IN THIS
, DRAIN CURRENT (A)
AREA MAY BE
D
I
LIMITED BY r
0.1
110
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11.
FDD8780/FDU8780 Rev. B
Forward Bias Safe Operating Area Figure 12. Single
Capability
DS(on)
SINGLE PULSE
= MAX RATED
T
J
o
T
= 25
C
C
10us
100us
1ms
10ms
DC
50
Figure 10.
7000
1000
100
), PEAK TRANSIENT POWER (W)
PK
30
-5
P(
10
Maximum Continuous Drain Current vs
Case Temperature
VGS = 10V
SINGLE PULSE
-4
10
t, PULSE WIDTH (s)
10-310
TC = 25oC
FOR TEMPERATURES
o
I = I
-2
25
C DERATE PEAK
175 TC–
-----------------------
150
-1
10
10
0
ABOVE 25
CURRENT AS FOLLOWS:
Pulse Maximum Power
Dissipation
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1
10
Page 5
FDD8780/FDU8780 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
SINGLE PULSE
-5
10
0.2
0.1
0.05
0.02
0.01
-4
10
Figure 13. Transient Thermal Response Curve
θJC
0.1
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
1E-3
= 25°C unless otherwise noted
J
-3
10
-2
10
t, RECTANGULAR PULSE DURATION(s)
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
θJC
P
DM
t
1
t
2
1/t2
x R
+ T
θJC
C
0
10
1
10
®
MOSFET
FDD8780/FDU8780 Rev. B
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Page 6
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
FDD8780/FDU8780 N-Channel PowerTrench
®
MOSFET
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
FDD8780/FDU8780 Rev. B
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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