Page 1
tm
FDD8778/FDU8778
N-Channel PowerTrench® MOSFET
25V, 35A, 14mΩ
FDD8778/FDU8778 N-Channel PowerTrench
May 2006
Features
Max r
Max r
Low gate charge: Q
= 14.0mΩ at V
DS(on)
= 21.0mΩ at V
DS(on)
= 10V, ID = 35A
GS
= 4.5V, ID = 33A
GS
= 12.6nC(Typ), VGS = 10V
g(TOT)
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Low gate resistance
E
E
R
RoHS compliant
F
I
D
A
E
L
M
P
L
E
M
E
N
T
A
T
I
O
N
Application
DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G
G
MOSFET Maximum Ratings T
DS
I-PAK
(TO-251AA)
= 25°C unless otherwise noted
C
D
S
Short Lead I-PAK
G
Symbol Parameter Ratings Units
V
DS
V
GS
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
I
D
-Pulsed (Note 1) 145
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 2) 24 mJ
Power Dissipation 39 W
Operating and Storage Temperature -55 to 175 °C
Thermal Characteristics
D
®
MOSFET
S
A -Continuous (Die Limited) 40
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251 3.8 °C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8778 FDD8778 TO-252AA 13’’ 12mm 2500 units
FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units
FDU8778 FDU8778_F071 TO-251AA N/A(Tube) N/A 75 units
©2006 Fairchild Semiconductor Corporation
FDD8778/FDU8778 Rev. A
www.fairchildsemi.com1
Page 2
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25
°C
VDS = 20V,
V
GS
= 0V
TJ = 150°C 250
17.2 mV/°C
1
Gate to Source Leakage Current VGS = ±20V ±10 µA
FDD8778/FDU8778 N-Channel PowerTrench
µA
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.5 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 160 215 pF
Reverse Transfer Capacitance 108 162 pF
Gate Resistance f = 1MHz 1.3 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 22 35 ns
Turn-Off Delay Time 43 69 ns
Fall Time 32 51 ns
Total Gate Charge at 10V V
Total Gate Charge at 5V V
Gate to Source Gate Charge 2.1 nC
Gate to Drain “Miller”Charge 3.2 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs 25 38 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 17 26 nC
= 25oC, L = 0.1mH, IAS = 22A ,VDD = 23V, VGS = 10V.
J
ID = 250µA, referenced to
25
°C
-5.3 mV/°C
VGS = 10V, ID = 35A 11. 6 14.0
VGS = 4.5V, ID = 33A 15.7 21.0
VGS = 10V, ID = 35A
TJ = 175°C
VDS = 13V, VGS = 0V,
18.2 23.8
635 845 pF
f = 1MHz
6 12 ns
VDD = 13V, ID = 35A
VGS = 10V, RGS = 27Ω
= 0V to 10V
GS
= 0V to 5V 6.7 9.4 nC
GS
V
= 0V, IS = 35A 1.03 1.25
GS
V
= 0V, IS = 15A 0.89 1.2
GS
VDD = 13V
I
= 35A
D
Ig = 1.0mA
12.6 18 nC
mΩ
®
MOSFET
V
FDD8778/FDU8778 Rev. A www.fairchildsemi.com2
Page 3
FDD8778/FDU8778 N-Channel PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
70
PULSE DURATION = 80µs
60
50
40
30
DUTY CYCLE = 0.5%MAX
VGS = 10V
VGS = 5.0V
V
= 4.5V
GS
20
, DRAIN CURRENT (A)
D
I
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
ID = 35A
V
= 10V
GS
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
V
= 4.0V
GS
VGS = 3.5V
V
= 3V
GS
4.0
PULSE DURATION = 80µs
3.5
3.0
V
= 3.0V
GS
DUTY CYCLE = 0.5%MAX
V
= 3.5V
GS
2.5
NORMALIZED
2.0
VGS = 4V
1.5
VGS = 4.5V
1.0
V
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 10203040506070
Figure 2. Normalized
VGS = 10V
ID, DRAIN CURRENT(A)
On-Resistance vs Drain
GS
= 5V
Current and Gate Voltage
50
ID = 35A
40
(mΩ)
30
20
, DRAIN TO
DS(on)
r
10
SOURCE ON-RESISTANCE
0
3.0 4.5 6.0 7.5 9.0
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 175oC
o
T
= 25
C
J
®
MOSFET
10
Figure 3.
Normalized On Resistance vs Junction
Temperature
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
V
= 5V
DD
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TJ = 175oC
TJ = 25oC
TJ = - 55oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDD8778/FDU8778 Rev. A www.fairchildsemi.com3
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
V
= 0V
GS
10
TJ = 175oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode Forward
TJ = 25oC
TJ = -55oC
Voltage vs Source Current
Page 4
FDD8778/FDU8778 N-Channel PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
10
8
V
6
4
DD
= 10V
VDD = 16V
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
03691215
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
50
10
TJ = 25oC
TJ = 150oC
, AVALANCHE CURRENT(A)
AS
I
1
1E-3 0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
VDD = 13V
TJ = 125oC
2000
1000
C
iss
C
oss
C
100
CAPACITANCE (pF)
40
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
rss
Capacitance vs Drain to Source Voltage
50
40
VGS=10V
30
20
, DRAIN CURRENT (A)
D
I
10
R
= 3.8oC/W
θJC
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
VGS=4.5V
f = 1MHz
V
= 0V
GS
30
®
MOSFET
Figure 9.
Unclamped Inductive Switching
Capability
400
100
10
LIMITED BY
PACKAGE
1
, DRAIN CURRENT (A)
OPERATION IN THIS
D
I
AREA MAY BE
LIMITED BY r
0.1
110
DS(on)
SINGLE PULSE
TJ = MAX RATED
O
TC = 25
C
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11.
FDD8778/FDU8778 Rev. A www.fairchildsemi.com4
Forward Bias Safe Operating Area Figure 12. Single
10us
100us
1ms
10ms
DC
50
Figure 10.
5000
1000
100
), PEAK TRANSIENT POWER (W)
PK
P(
10
10-510-410-310-210
Maximum Continuous Drain Current vs
Case Temperature
VGS = 10V
SINGLE PULSE
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
o
I = I
25
C DERATE PEAK
175 TC–
-----------------------
150
-1
10010
ABOVE 25
CURRENT AS FOLLOWS:
Pulse Maximum Power
Dissipation
1
Page 5
FDD8778/FDU8778 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
θJC
0.05
0.02
0.01
0.1
IMPEDANCE, Z
NORMALIZED THERMAL
0.01
-5
10
SINGLE PULSE
-4
10
Figure 13. Transient Thermal Response Curve
= 25°C unless otherwise noted
J
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
θJC
P
DM
t
1
t
2
1/t2
x R
+ T
θJC
C
0
10
1
10
®
MOSFET
FDD8778/FDU8778 Rev. A www.fairchildsemi.com5
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
®
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
i-Lo™
ImpliedDisconnect™
IntelliMAX™
®
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
®
VCX™
Wire™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
FDD8778/FDU8778 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
FDD8778/FDU8778 Rev. A
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
www.fairchildsemi.com6
Loading...