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FDD8647L
(
)
N-Channel PowerTrench® MOSFET
40 V, 42 A, 9 mΩ
Features
Max r
Max r
Fast Switching
100% UIL tested
RoHS Compliant
= 9 mΩ at VGS = 10 V, ID = 13 A
DS(on)
= 13 mΩ at VGS = 4.5 V, ID = 11 A
DS(on)
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low r
superior performance benefit in the application.
DS(on)
Applications
Inverter
Power Supplies
and optimized BV
D
December 2008
®
technology to
capability to offer
DSS
FDD8647L N-Channel PowerTrench
®
MOSFET
G
D
G
S
D-PAK
TO-252
TO-252
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 33 mJ
Power Dissipation TC = 25 °C 43
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C 52
C
= 25 °C (Note 1a) 14
A
= 25 °C (Note 1a) 3.1
A
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 2.9
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8647L FDD8647L D-PAK (TO-252) 13 ’’ 12 mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
1
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FDD8647L N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 31 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 13 A 7.1 9.0
GS
= 4.5 V, ID = 11 A 9.9 13.0
GS
= 10 V, ID = 13 A, TJ = 125 °C 10.7 13.6
V
GS
Forward Transconductance VDS = 5 V, ID = 13 A 49 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 340 455 pF
Reverse Transfer Capacitance 55 80 pF
Gate Resistance 0.9 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 19 34 ns
Fall Time 210ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 10 14 nC
Gate to Source Charge 3.8 nC
Gate to Drain “Miller” Charge 3.1 nC
= 20 V, VGS = 0 V,
V
DS
f = 1 MHz
= 20 V, ID = 13 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 13 A
D
= 20 V,
1230 1640 pF
816ns
20 28 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting T
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 15 27 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins .
is guaranteed by design while R
= 25 °C, L = 0.3 mH, IAS = 15.0 A, VDD = 36 V, VGS = 10.0 V.
J
is determined by the user’s board design.
θJA
a)
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
V
= 0 V, IS = 2.6 A (Note 2) 0.75 1.2
GS
= 0 V, IS = 13 A (Note 2) 0.84 1.3
V
GS
= 13 A, di/dt = 100 A/µs
I
F
2
b)
28 45 ns
96 °C/W when mounted on
a minimum pad
V
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Page 3
FDD8647L N-Channel PowerTrench
Typical Characteristics T
100
VGS = 10 V
80
60
40
DRAIN CURRENT (A)
,
20
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
1.8
ID = 13 A
V
1.6
On Region Characteristics Figure 2.
= 10 V
GS
1.4
VGS = 5 V
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
3.5
3.0
VGS = 3.5 V
V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 4 V
GS
2.5
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 20406080100
I
,
DRAIN CURRENT (A)
D
VGS = 4.5 V
VGS = 5 V
V
GS
Nor mal ize d On -Re sis tan c e
vs Drain Current and Gate Voltage
40
)
Ω
m
(
30
ID = 13 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 10 V
®
MOSFET
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TE MPERATURE
J
o
(
C
)
Fi gure 3. N or ma lized On Re sista nc e
vs Junction Temperature
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
V
= 5 V
DS
60
40
, DRAIN CURRENT (A)
20
D
I
0
12345
TJ = 150 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
20
DRAIN TO
,
DS(on)
r
10
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
On-Resist ance vs Gate to
TJ = 125 oC
TJ = 25 oC
Source Voltage
100
V
= 0 V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Figure 6.
Sou rce to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDD8647L N-Channel PowerTrench
Typical Characteristics T
10
ID = 13 A
8
VDD = 20 V
6
V
= 15 V
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20
Figure 7.
100
42
10
, AVALANCHE CURRENT (A)
AS
I
1
0.001 0.01 0.1 1 10 100
DD
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
= 25 °C unless otherwise noted
J
VDD = 25 V
TJ = 25 oC
3000
1000
100
CAPACITANCE (pF)
f = 1 MHz
V
= 0 V
GS
10
0.1 1 10 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Cap a ci t anc e vs D r ain
to Source Voltage
60
50
40
V
30
Limited by Package
20
DRAIN CURRENT (A)
,
D
I
10
R
= 2.9 oC/W
θ
0
JC
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
GS
V
= 4.5 V
GS
o
(
C
= 10 V
)
C
iss
C
oss
C
rss
®
MOSFET
Figure 9.
Unc l a mpe d I ndu c t ive
Switching Capability
200
100
10
THIS AREA IS
LIMITED BY r
1
, DRAIN CURRENT (A)
D
I
0.1
0.1 1 10 100
DS(on)
SINGLE PULSE
T
= MAX RATED
J
R
= 2.9 oC/W
θ
JC
T
= 25 oC
C
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Figure 10.
Ma ximum Co ntinuou s D rain
Current vs Case Temperature
5
10
VGS = 10 V
4
10
100 us
3
10
1 ms
10 ms
100 ms
DC
200
10
PEAK TRANSIENT POWER (W)
,
)
PK
P(
2
10
-6
10
Figure 12.
-5
10
-4
10
t, PULSE WIDTH (sec)
10
Single Pulse Maximum
-3
SINGLE PULSE
= 2.9 oC/W
R
θ
JC
= 25 oC
T
C
-2
10
10
-1
1
Power Dissipation
4
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Page 5
FDD8647L N-Channel PowerTrench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
-6
-5
10
Figure 13. Junction-to-Case Transient Thermal Response Curve
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
-3
10
NORMALIZED THERMAL
NORMALIZED THERMAL
JC
θ
Z
0.1
IMPEDANCE,
0.01
0.001
JA
θ
Z
0.1
IMPEDANCE,
0.01
0.001
10
2
1
10
= 25 °C unless otherwise noted
J
= 2.9 oC/W
θ
JC
-4
10
t, RECTANGULAR PULSE DURATION (sec)
SINGLE PULSE
= 96 oC/W
R
θ
JA
(Note 1b)
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-3
10
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
θJC
P
DM
θJA
110
2
1/t2
x R
+ T
θJc
C
-1
10
t
1
t
2
1/t2
x R
+ T
θJA
A
100 1000
1
®
MOSFET
Figure 14.
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Junction-to-Ambient Transient Thermal Response Curve
5
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Page 6
TRADEMARKS
®
tm
tm
The following includes registered and unregistered tra demarks and service marks, owned by Fairchild Semico nductor and/or its glo bal subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
F-PFS™
* EZSWITCH™ and FlashWriter
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
®
®
®
®
®
*
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
PowerTrench
®
®
®
®
PowerXS™
SM
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise
®
TinyBoost™
TinyBuck™
®
TinyLogic
TINYOPTO™
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TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
FDD8647L N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing prob lem in the indust ry. All manufactur es of semiconductor product s are experiencin g counterfeiting of their
parts. Customers who inadvertently purchase count erfeit par ts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and man ufacturing delays. Fairchild is taking strong measures to protect ourselve s and our customers from the
proliferation of counterfeit parts. Farichild stro ngly encourage s customers t o purchase Farichild par ts either dire ctly from Fairchil d or from Authorized Fa irchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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committed to combat this global problem and encourage our customers t o do their part in st opping this practice by buying direct or from authorized distrib utors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
Datasheet contains the design specifications f or product development. S pecifications may
change in any manner without notice.
Datasheet contains preliminary data; sup plementary dat a will be pu blished at a lat er date.
Fairchild Semiconductor reserves the right to make ch anges at any time without notice to
improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I37
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