Datasheet FDD86326 Datasheet (Fairchild)

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FDD86326

N-Channel PowerTrench® MOSFET

80 V, 37 A, 23 m: Features

 Max r

 High performance trench technology for extremely low r

 High power and current handling capability in a widely used

surface mount package

 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed

 100% UIL tested

 RoHS Compliant

= 23 m: at VGS = 10 V, ID = 8 A

DS(on)

= 37 m: at VGS = 6 V, ID = 4.6 A

DS(on)

June 2010



General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for r ruggedness.

, switching performance and

DS(on)

process that has

Applications

 DC - DC Conversion

FDD86326 N-Channel PowerTrench

MOSFET

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 42

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 121 mJ

Power Dissipation TC = 25 °C 62

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 37

= 25 °C (Note 1a) 8

= 25 °C (Note 1a) 3.1

Thermal Characteristics

TJC

TJA

Thermal Resistance, Junction to Case 2.0

Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD86326 FDD86326 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

°C/W

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FDD86326 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

'BV

DSS

'T

DSS

GSS

On Characteristics

GS(th)

'V

GS(th)

'T

DS(on)

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 80 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = 64 V, V

= 250 PA, referenced to 25 °C 67 mV/°C

= 0 V 1 PA

Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100 nA

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2 3.1 4 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250 PA, referenced to 25 °C -8.5 mV/°C

= 10 V, ID = 8 A 19 23

= 6 V, ID = 4.6 A 26 37

= 10 V, ID = 8 A, TJ= 125 °C 33 44

Forward Transconductance VDS = 10 V, ID = 8 A 21 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 180 240 pF

Reverse Transfer Capacitance 15 25 pF

= 50 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.4 :

780 1035 pF

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 3.0 10 ns

Turn-Off Delay Time 13.4 24 ns

= 50 V, ID = 8 A,

= 10 V, R

GEN

= 6 :

7.6 15 ns

Fall Time 2.9 10 ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 7.6 11 nC

Gate to Source Gate Charge 4.0 nC

= 8 A

= 50 V,

13.4 19 nC

Gate to Drain “Miller” Charge 3.7 nC

m:V

MOSFET

Drain-Source Diode Characteristics

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

TJA

TJC

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. Starting TJ=25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V.

FDD86326 Rev.C1

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 43 68 nC

is guaranteed by design while R

is determined by the user’s board design.

TJA

= 0 V, IS= 8 A (Note 2) 0.8 1.3

= 0 V, IS= 2.6 A (Note 2) 0.7 1.2

= 8 A, di/dt = 100 A/Ps

a. 40 °C/W when mounted on a 1 in2pad of 2 oz copper.

43 68 ns

b. 96 °C/W when mounted on a minimum pad of 2 oz copper.

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FDD86326 N-Channel PowerTrench

Typical Characteristics T

DRAIN CURRENT (A)

012345

Figure 1.

2.0

1.8

1.6

1.4

1.2

NORMALIZED

1.0

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 10 V

PULSE DURATION = 80 Ps

VGS = 8 V VGS = 6 V

DRAIN TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX

On-Region Characteristics Figure 2.

ID = 8 A

= 10 V

JUNCTION TEMPERATURE

vs Junction Temperature

= 25 °C unless otherwise noted

VGS = 5 V

VGS = 4.5 V

(

)

VGS = 4.5 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VGS = 5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

0 10203040

VGS = 6 V

VGS = 8 V

DRAIN CURRENT (A)

VGS = 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

)

(

ID= 8 A

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

46810

GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

TJ= 125 oC

TJ= 25 oC

Source Voltage

MOSFET

, DRAIN CURRENT (A)

FDD86326 Rev.C1

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VDS= 5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

234567

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

= 0 V

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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FDD86326 N-Channel PowerTrench

Typical Characteristics T

ID= 8 A

, GATE TO SOURCE VOLTAGE (V)

03691215

Figure 7.

9 8 7

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

6 5

, AVALANCHE CURRENT (A)

0.01 0.1 1 10 30

tAV, TI ME IN AVALANCHE (ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

VDD = 50 V

TJ= 125 oC

= 25 °C unless otherwise noted

= 25 V

VDD = 75 V

TJ= 25 oC

TJ= 100 oC

1000

iss

oss

100

CAPACITANCE (pF)

f = 1 MHz V

= 0 V

0.1 1 10 80

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

= 10 V

= 2 oC/W

(

)

DRAIN CURRENT (A)

25 50 75 100 125 150

CASE TEMPERATURE

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

VGS= 4.5 V

Current vs Case Temperature

MOSFET

, DRAIN CURRENT (A)

0.1

FDD86326 Rev.C1

10000

100 us

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

= 3.8 oC/W

= 25 oC

1 ms

10 ms 100 ms

110100200

VDS, DRAIN to SOURCE VOLTAGE (V)

1000

PEAK TRANSIENT POWER (W)

)

100

(

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

VGS = 10 V

-5

-4

Figure 12.

Power Dissipation

SINGLE PULSE

= 2 oC/W

= 25 oC

-3

-2

t, PULSE WIDTH (sec)

-1

S i n g l e P u l s e M a x i m u m

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FDD86326 N-Channel PowerTrench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

Figure 13. Junction-to-Case Transient Thermal Response Curve

= 25 °C unless otherwise noted

= 2 oC/W

-4

-3

x R

+ T

TJC

MOSFET

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

TJC

-1

FDD86326 Rev.C1

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Page 6

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* PSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDD86326 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDD86326 Rev.C1

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I48

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