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FDD86252
G
S
D
TO-252
D-PAK
(TO-252)
N-Channel PowerTrench® MOSFET
150 V, 27 A, 52 m:
Features
Max r
Max r
100% UIL tested
RoHS Compliant
= 52 m: at VGS = 10 V, ID = 5 A
DS(on)
= 72 m: at VGS = 6 V, ID = 4 A
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
September 2011
®
process that has
FDD86252 N-Channel PowerTrench
DC - DC Conversion
D
G
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 25
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C 27
C
= 25 °C (Note 1a) 5
A
= 25 °C (Note 1a) 3.1
A
Thermal Characteristics
®
MOSFET
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient ( Note 1a) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD86252 FDD86252 D-PAK(TO-252) 13 ’’ 12 mm 2500 units
©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C
1
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FDD86252 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 PA, referenced to 25 °C 104 mV/°C
D
= 0 V 1 PA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2.0 3.1 4.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 PA, referenced to 25 °C -10 mV/°C
D
V
= 10 V, ID = 5 A 41 52
GS
= 6 V, ID = 4 A 49 72
GS
= 10 V, ID = 5 A,TJ = 125 °C 81 103
V
GS
Forward Transconductance VDS = 10 V, ID = 5 A 15 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 78 130 pF
Reverse Transfer Capacitance 4.2 10 pF
Gate Resistance 0.4 :
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 1.8 10 ns
Turn-Off Delay Time 14 25 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 6.3 9 nC
Gate to Source Charge 3.4 nC
Gate to Drain “Miller” Charge 2.6 nC
= 75 V, VGS = 0 V,
V
DS
f = 1 MHz
= 75 V, ID = 5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 :
V
DD
I
= 5 A
D
= 75 V,
741 985 pF
8.3 17 ns
11.3 16 nC
m:V
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
R
TJC
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 135 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 72 115 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
is determined by the user’s board design.
TJA
a)
V
GS
V
GS
= 5 A, di/dt = 100 A/Ps
I
F
40 °C/W when mounted o n a
2
1 in
pad of 2 oz copper
= 0 V, IS = 5 A (Note 2) 0.80 1.3 V
= 0 V, IS = 2.6 A (Note 2) 0.77 1.2
60 97 ns
96 °C/W when mounted on
b)
a minimum pad
2
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FDD86252 N-Channel PowerTrench
012345
0
5
10
15
20
25
0 5 10 15 20 25
0
1
2
3
4
5
VGS = 5 V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
VGS = 6 V
VGS = 5.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
45678910
0
50
100
150
200
250
TJ = 125 oC
ID = 5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(m:)
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
234567
0
5
10
15
20
25
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
30
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
VGS = 10 V
VGS = 6 V
, DRAIN CURRENT (A)
D
I
Figure 1.
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
VGS = 5.5 V
VGS = 5 V
VGS = 4.5 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
, DRAIN CURRENT (A)
D
I
©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C
Figure 5. Transfer Characteristics
TJ = 150 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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FDD86252 N-Channel PowerTrench
036912
0
2
4
6
8
10
ID = 5 A
VDD = 50 V
V
DD
= 100 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
0.1 1 10 100
1
10
100
1000
0.001 0.01 0.1 1 10
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
5
10
15
20
25
30
T
110100400
0.1
1
10
50
T
10
-5
10
-4
10
-3
10
-2
10
-1
1
50
100
1000
5000
T
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
C
iss
C
oss
CAPACITANCE (pF)
C
f = 1 MHz
V
= 0 V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
rss
®
MOSFET
to Source Voltage
V
= 10 V
GS
V
= 6 V
GS
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
THIS AREA IS
LIMITED BY r
, DRAIN CURRENT (A)
D
I
©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C
Figure 11.
DS(on)
SINGLE PULSE
T
= MAX RATED
J
o
= 1.4
R
T
VDS, DRAIN to SOURCE VOLTAGE ( V)
C/W
JC
o
= 25
C
C
F o r w ar d B i a s S a fe
Operating Area
100 Ps
1 ms
10 ms
DC
, DRAIN CURRENT (A)
D
I
R
= 1.4 oC/W
JC
o
C)
Figure 10.
T
, CASE TEMPERATURE (
C
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
SINGLE PULSE
o
= 1.4
C
JC
= 25
C/W
o
C
R
T
), PEAK TRANSIENT POWER (W)
PK
P(
Figure 12.
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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FDD86252 N-Channel PowerTrench
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.01
0.1
1
SINGLE PULSE
R
TJC
= 1.4 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
TJC
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
TJC
x R
TJc
+ T
C
Typical Characteristics T
Figure 13. Junction-to-Case Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C
www.fairchildsemi.com
5
Page 6
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t
®
t
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tm
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FDD86252 N-Channel PowerTrench
®
MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDD86252 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
6
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