Page 1
FDD86250
G
S
D
TO-252
D-PAK
(TO-252)
D
G
S
N-Channel PowerTrench® MOSFET
150 V, 50 A, 22 mΩ
Features
Max r
Max r
100% UIL tested
RoHS Compliant
= 22 mΩ at VGS = 10 V, ID = 8 A
DS(on)
= 31 mΩ at VGS = 6 V, ID = 6.5 A
DS(on)
FDD86250 N-Channel PowerTrench
December 2010
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
MOSFET Maximum Ratings
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
TJ, T
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 180 mJ
Power Dissipation TC = 25 °C 132
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
TC = 25 °C unless otherwise noted
= 25 °C 51
C
= 25 °C (Note 1a) 8
A
= 25 °C (Note 1a) 3.1
A
Thermal Characteristics
®
MOSFET
A
W
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD86250 FDD86250 D-PAK(TO-252) 13 ’’ 12 mm 2500 units
Thermal Resistance, Junction to Case 0.94
Thermal Resistance, Junction to Ambient (Note 1a) 40
°C/W
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
1
www.fairchildsemi.com
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FDD86250 N-Channel PowerTrench
Electrical Characteristics
TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 106 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.9 4.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
I
= 250 μA, referenced to 25 °C -10 mV/°C
D
VGS = 10 V, ID = 8 A 18.4 22
Static Drain to Source On Resistance
= 10 V, ID = 8 A, TJ = 125 °C 35.8 45
V
GS
Forward Transconductance VDS = 10 V, ID = 8 A 28 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 167 225 pF
Reverse Transfer Capacitance 7 15 pF
Gate Resistance 0.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 3.7 10 ns
Turn-Off Delay Time 20 32 ns
Fall Time 410ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 12.8 18 nC
Gate to Source Charge 6.7 nC
Gate to Drain “Miller” Charge 4.7 nC
VDS = 75 V, VGS = 0 V,
f = 1 MHz
= 75 V, ID = 8 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
VDD = 75 V,
ID = 8 A
1585 2110 pF
11.2 20 ns
23 33 nC
mΩVGS = 6 V, ID = 6.5 A 21.4 31
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
θJC
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 1.0 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 104 166 nC
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
40 °C/W when mounted on a
1 in2 pa d of 2 oz cop per
V
= 0 V, IS = 8 A (Note 2) 0.78 1.3 V
GS
V
= 0 V, IS = 2.6 A (Note 2) 0.73 1.2
GS
IF = 8 A, di/dt = 100 A/μs
2
71 113 ns
b) 96 °C/W when mounted on
a minimum pad
www.fairchildsemi.com
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FDD86250 N-Channel PowerTrench
012345
0
10
20
30
40
VGS = 5.5 V
VGS = 5 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 10203040
0
1
2
3
4
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
VGS = 6 V
VGS = 5.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 8 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
46810
0
20
40
60
80
TJ = 125 oC
ID = 8 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23456
0
10
20
30
40
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
40
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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FDD86250 N-Channel PowerTrench
0 5 10 15 20 25
0
2
4
6
8
10
ID = 8 A
VDD = 50 V
V
DD
= 100 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
0.1 1 10 100
1
10
100
1000
4000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 40
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
50
60
Package Limited
V
GS
= 6 V
R
θJC
= 0.94 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.1 1 10 100 500
0.1
1
10
50
100 μs
10 ms
DC
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJC
= 0.94
o
C/W
T
C
= 25
o
C
10
-5
10
-4
10
-3
10
-2
10
-1
1
100
1000
10000
SINGLE PULSE
R
θJC
= 0.94
o
C/W
T
C
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
MOSFET
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Figure 11.
Operating Area
F o r w ar d B i a s S a fe
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
4
S i n g l e P u l s e M a x i m u m
Power Dissipation
www.fairchildsemi.com
Page 5
FDD86250 N-Channel PowerTrench
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.005
0.1
1
SINGLE PULSE
R
θJC
= 0.94 oC/W
DUTY CYCLE-DESCENDI NG ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJC
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1/t2
PEAK TJ = PDM x Z
θJC
x R
θJc
+ T
C
Typical Characteristics T
Figure 13. Junction-to-Case Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
5
www.fairchildsemi.com
Page 6
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tm
®
tm
tm
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intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
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DEUXPEED
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EfficentMax™
ESBC™
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FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
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®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
®
®
®
PowerTrench
PowerXS™
SM
Programmable Active Droop™
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QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
®
®
™
®
®
®
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
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TinyLogic
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TriFault Detect™
TRUECURRENT™*
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Ultra FRFET™
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VCX™
VisualMax™
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®
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®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDD86250 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I51
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